This product complies with the RoHS Directive (EU 2002/95/EC).
DSA2G01
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High forward current transfer ratio h
FE
with excellent linearity
High transition frequency f
T
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini3-G3-B
Name
Pin
1. Base
2. Emitter
3. Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: A4
Unit
V
V
V
mA
mW
°C
°C
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
–30
–20
–5
–30
200
150
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Reverse transfer capacitance
(Common emitter)
Noise figure
Reverse transfer impedance
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
C
re
NF
Z
rb
Conditions
V
CE
= –10 V, I
C
= –1 mA
V
CB
= –10 V, I
E
= 0
V
CE
= –20 V, I
B
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –10 V, I
C
= –1 mA
I
C
= –10 mA, I
B
= –1 mA
V
CE
= –10 V, I
C
= –1 mA
V
CE
= –10 V, I
C
= –1 mA, f = 10.7 MHz
V
CE
= –10 V, I
C
= –1 mA, f = 5 MHz
V
CE
= –10 V, I
C
= –1 mA, f = 2 MHz
150
70
– 0.1
300
1.0
2.8
22
Min
Typ
– 0.7
– 0.1
–100
–10
220
Max
Unit
V
µA
µA
µA
V
MHz
pF
dB
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
Rank
h
FE
Marking Symbol
B
B
70 to 140
A4B
C
C
110 to 220
A4C
0
No-rank
70 to 220
A4
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: January 2011
Ver. BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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