9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Rochester Electronics |
| Reach Compliance Code | unknown |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 80 V |
| 最大漏极电流 (ID) | 9.2 A |
| 最大漏源导通电阻 | 0.27 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | NOT SPECIFIED |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 37 A |
| 认证状态 | COMMERCIAL |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |

| IRF521 | IRF520 | IRF522 | IRF523 | |
|---|---|---|---|---|
| 描述 | 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 8A, 100V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 80 V | 100 V | 100 V | 80 V |
| 最大漏极电流 (ID) | 9.2 A | 9.2 A | 8 A | 8 A |
| 最大漏源导通电阻 | 0.27 Ω | 0.27 Ω | 0.36 Ω | 0.36 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 37 A | 37 A | 32 A | 32 A |
| 认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 表面贴装 | NO | NO | NO | NO |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Rochester Electronics | - | Rochester Electronics | Rochester Electronics |
| 湿度敏感等级 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
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