Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
| 参数名称 | 属性值 |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP28,.6 |
| 针数 | 28 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 70 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDIP-T28 |
| 长度 | 37 mm |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 32KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.826 mm |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.05 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| HY62CT08081E-DP70I | HY62CT08081E-DT70E | HY62CT08081E-DT85E | HY62CT08081E-DP70C | HY62CT08081E-DT70C | HY62CT08081E-DT85I | HY62CT08081E-DT85C | |
|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 | Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 | Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 | Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 | Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 |
| 零件包装代码 | DIP | TSOP | TSOP | DIP | TSOP | TSOP | TSOP |
| 包装说明 | DIP, DIP28,.6 | TSOP1, TSSOP28,.53,22 | TSOP1, TSSOP28,.53,22 | DIP, DIP28,.6 | TSOP1, TSSOP28,.53,22 | TSOP1, TSSOP28,.53,22 | TSOP1, TSSOP28,.53,22 |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 70 ns | 70 ns | 85 ns | 70 ns | 70 ns | 85 ns | 85 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDIP-T28 | R-PDSO-G28 | R-PDSO-G28 | R-PDIP-T28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 |
| 长度 | 37 mm | 11.8 mm | 11.8 mm | 37 mm | 11.8 mm | 11.8 mm | 11.8 mm |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 70 °C | 70 °C | 85 °C | 70 °C |
| 最低工作温度 | -40 °C | -25 °C | -25 °C | - | - | -40 °C | - |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | TSOP1 | TSOP1 | DIP | TSOP1 | TSOP1 | TSOP1 |
| 封装等效代码 | DIP28,.6 | TSSOP28,.53,22 | TSSOP28,.53,22 | DIP28,.6 | TSSOP28,.53,22 | TSSOP28,.53,22 | TSSOP28,.53,22 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | IN-LINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.826 mm | 1.2 mm | 1.2 mm | 4.826 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| 最大压摆率 | 0.05 mA | 0.05 mA | 0.05 mA | 0.05 mA | 0.05 mA | 0.05 mA | 0.05 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | NO | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | OTHER | OTHER | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
| 端子节距 | 2.54 mm | 0.55 mm | 0.55 mm | 2.54 mm | 0.55 mm | 0.55 mm | 0.55 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 8 mm | 8 mm | 15.24 mm | 8 mm | 8 mm | 8 mm |
| 厂商名称 | - | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | - |
| JESD-609代码 | - | e6 | e6 | e0 | e6 | e6 | e6 |
| 端子面层 | - | TIN BISMUTH | TIN BISMUTH | Tin/Lead (Sn/Pb) | TIN BISMUTH | TIN BISMUTH | TIN BISMUTH |
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