PD - 94428
AUTOMOTIVE MOSFET
Typical Applications
l
IRF2805
HEXFET
®
Power MOSFET
D
Climate Control, ABS, Electronic Braking,
Windshield Wipers
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 55V
R
DS(on)
= 4.7mΩ
S
Features
l
l
l
l
l
I
D
= 75A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
175
120
75
700
330
2.2
± 20
450
1220
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
W
W/°C
V
mJ
A
mJ
°C
300 (1.6mm from case )
1.1 (10)
N•m (lbf•in)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
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1
8/8/02
IRF2805
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
55
–––
–––
2.0
91
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.06
3.9
–––
–––
–––
–––
–––
–––
150
38
52
14
120
68
110
4.5
7.5
5110
1190
210
6470
860
1600
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
4.7
mΩ V
GS
= 10V, I
D
= 104A
4.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 104A
20
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
230
I
D
= 104A
57
nC V
DS
= 44V
78
V
GS
= 10V
–––
V
DD
= 28V
–––
I
D
= 104A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 44V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
175
––– –––
showing the
A
G
integral reverse
––– ––– 700
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 104A, V
GS
= 0V
––– 80 120
ns
T
J
= 25°C, I
F
= 104A
––– 290 430
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.08mH
R
G
= 25Ω, I
AS
= 104A. (See Figure 12).
I
SD
≤
104A, di/dt
≤
240A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
2
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IRF2805
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
ID, Drain-to-Source Current (A)
100
4.5V
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
10
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
200
T J = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(
A)
T J = 175°C
160
T J = 175°C
120
T J = 25°C
80
100
40
VDS = 25V
20µs PULSE WIDTH
0
0
40
80
120
160
200
10
4.0
5.0
6.0
VDS = 25V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRF2805
10000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
Crss
Coss
= Cgd
= C + Cgd
ds
20
ID= 104A
VGS , Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
8000
16
C, Capacitance (pF)
6000
12
Ciss
4000
8
2000
4
Coss
0
1
10
Crss
100
0
0
40
80
120
160
200
240
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
T J = 175°C
100.0
ID, Drain-to-Source Current (A)
1000
10.0
100
100µsec
1msec
1.0
TJ = 25°C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
1.8
1
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2805
180
3.0
I
D
= 175A
LIMITED BY PACKAGE
150
2.5
R
DS(on)
, Drain-to-Source On Resistance
120
2.0
I
D
, Drain Current (A)
(Normalized)
90
1.5
60
1.0
30
0.5
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
T
J
, Junction Temperature
(
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
(Z
thJC
)
D = 0.50
0.1
0.20
0.10
Thermal Response
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
J
= P
DM
x Z
thJC
+T
C
0.1
0.001
0.00001
0.0001
0.001
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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