IDT7026L70GB概述

Multi-Port SRAM, 16KX16, 70ns, CMOS, CPGA84, CAVITY-UP, CERAMIC, PGA-84

IDT7026L70GB规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	PGA
包装说明	CAVITY-UP, CERAMIC, PGA-84
针数	84
Reach Compliance Code	not_compliant
ECCN代码	3A001.A.2.C
最长访问时间	70 ns
其他特性	ARBITER; SEMAPHORE
I/O 类型	COMMON
JESD-30 代码	S-CPGA-P84
JESD-609代码	e0
长度	27.94 mm
内存密度	262144 bit
内存集成电路类型	MULTI-PORT SRAM
内存宽度	16
功能数量	1
端口数量	2
端子数量	84
字数	16384 words
字数代码	16000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	16KX16
输出特性	3-STATE
可输出	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	PGA
封装等效代码	PGA84M,11X11
封装形状	SQUARE
封装形式	GRID ARRAY
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
认证状态	Not Qualified
筛选级别	38535Q/M;38534H;883B
座面最大高度	5.207 mm
最大待机电流	0.012 A
最小待机电流	4.5 V
最大压摆率	0.395 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	MILITARY
端子面层	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG
端子节距	2.54 mm
端子位置	PERPENDICULAR
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	27.94 mm
Base Number Matches	1

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IDT7026L70GB相似产品对比

	IDT7026L70GB	IDT7026L45G	IDT7026L45J8	IDT7026L45J	IDT7026S70GB	IDT7026S45G	IDT7026S45GB	IDT7026S45J	IDT7026S45J8	IDT7026L45GB
描述	Multi-Port SRAM, 16KX16, 70ns, CMOS, CPGA84, CAVITY-UP, CERAMIC, PGA-84	Multi-Port SRAM, 16KX16, 45ns, CMOS, CPGA84, CAVITY-UP, CERAMIC, PGA-84	Multi-Port SRAM, 16KX16, 45ns, CMOS, PQCC84, PLASTIC, LCC-84	Multi-Port SRAM, 16KX16, 45ns, CMOS, PQCC84, PLASTIC, LCC-84	Multi-Port SRAM, 16KX16, 70ns, CMOS, CPGA84, CAVITY-UP, CERAMIC, PGA-84	Multi-Port SRAM, 16KX16, 45ns, CMOS, CPGA84, CAVITY-UP, CERAMIC, PGA-84	Multi-Port SRAM, 16KX16, 45ns, CMOS, CPGA84, CAVITY-UP, CERAMIC, PGA-84	Multi-Port SRAM, 16KX16, 45ns, CMOS, PQCC84, PLASTIC, LCC-84	Multi-Port SRAM, 16KX16, 45ns, CMOS, PQCC84, PLASTIC, LCC-84	Multi-Port SRAM, 16KX16, 45ns, CMOS, CPGA84, CAVITY-UP, CERAMIC, PGA-84
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	PGA	PGA	LCC	LCC	PGA	PGA	PGA	LCC	LCC	PGA
包装说明	CAVITY-UP, CERAMIC, PGA-84	CAVITY-UP, CERAMIC, PGA-84	QCCJ,	QCCJ, LDCC84,1.2SQ	CAVITY-UP, CERAMIC, PGA-84	CAVITY-UP, CERAMIC, PGA-84	CAVITY-UP, CERAMIC, PGA-84	QCCJ, LDCC84,1.2SQ	QCCJ,	CAVITY-UP, CERAMIC, PGA-84
针数	84	84	84	84	84	84	84	84	84	84
Reach Compliance Code	not_compliant	not_compliant	compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	compliant	not_compliant
ECCN代码	3A001.A.2.C	EAR99	EAR99	EAR99	3A001.A.2.C	EAR99	3A001.A.2.C	EAR99	EAR99	3A001.A.2.C
最长访问时间	70 ns	45 ns	45 ns	45 ns	70 ns	45 ns	45 ns	45 ns	45 ns	45 ns
其他特性	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE	ARBITER; SEMAPHORE
JESD-30 代码	S-CPGA-P84	S-CPGA-P84	S-PQCC-J84	S-PQCC-J84	S-CPGA-P84	S-CPGA-P84	S-CPGA-P84	S-PQCC-J84	S-PQCC-J84	S-CPGA-P84
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	27.94 mm	27.94 mm	29.2862 mm	29.2862 mm	27.94 mm	27.94 mm	27.94 mm	29.2862 mm	29.2862 mm	27.94 mm
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
内存集成电路类型	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM
内存宽度	16	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2	2	2
端子数量	84	84	84	84	84	84	84	84	84	84
字数	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
字数代码	16000	16000	16000	16000	16000	16000	16000	16000	16000	16000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	70 °C	70 °C	70 °C	125 °C	70 °C	125 °C	70 °C	70 °C	125 °C
组织	16KX16	16KX16	16KX16	16KX16	16KX16	16KX16	16KX16	16KX16	16KX16	16KX16
可输出	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED
封装代码	PGA	PGA	QCCJ	QCCJ	PGA	PGA	PGA	QCCJ	QCCJ	PGA
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY	GRID ARRAY	CHIP CARRIER	CHIP CARRIER	GRID ARRAY	GRID ARRAY	GRID ARRAY	CHIP CARRIER	CHIP CARRIER	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	5.207 mm	5.207 mm	4.572 mm	4.572 mm	5.207 mm	5.207 mm	5.207 mm	4.572 mm	4.572 mm	5.207 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	YES	YES	NO	NO	NO	YES	YES	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	COMMERCIAL	COMMERCIAL	COMMERCIAL	MILITARY	COMMERCIAL	MILITARY	COMMERCIAL	COMMERCIAL	MILITARY
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn85Pb15)	TIN LEAD	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG	PIN/PEG	J BEND	J BEND	PIN/PEG	PIN/PEG	PIN/PEG	J BEND	J BEND	PIN/PEG
端子节距	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm
端子位置	PERPENDICULAR	PERPENDICULAR	QUAD	QUAD	PERPENDICULAR	PERPENDICULAR	PERPENDICULAR	QUAD	QUAD	PERPENDICULAR
宽度	27.94 mm	27.94 mm	29.2862 mm	29.2862 mm	27.94 mm	27.94 mm	27.94 mm	29.2862 mm	29.2862 mm	27.94 mm
是否无铅	含铅	含铅	含铅	-	含铅	含铅	含铅	-	含铅	含铅
I/O 类型	COMMON	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON
输出特性	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE
封装等效代码	PGA84M,11X11	PGA84M,11X11	-	LDCC84,1.2SQ	PGA84M,11X11	PGA84M,11X11	PGA84M,11X11	LDCC84,1.2SQ	-	PGA84M,11X11
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	225	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	225	NOT SPECIFIED
电源	5 V	5 V	-	5 V	5 V	5 V	5 V	5 V	-	5 V
最大待机电流	0.012 A	0.006 A	-	0.006 A	0.035 A	0.018 A	0.035 A	0.018 A	-	0.012 A
最小待机电流	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-	4.5 V
最大压摆率	0.395 mA	0.35 mA	-	0.35 mA	0.47 mA	0.41 mA	0.48 mA	0.41 mA	-	0.41 mA
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	30	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	30	NOT SPECIFIED

IDT7026L70GB

IDT7026L70GB概述

IDT7026L70GB规格参数

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IDT7026L70GB相似产品对比

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