PD - 93936C
SMPS MOSFET
Applications
l
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
IRF3706
IRF3706S
IRF3706L
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
8.5mΩ
I
D
77A
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
l
l
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3706
D
2
Pak
IRF3706S
TO-262
IRF3706L
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Max.
20
± 12
77
54
280
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
h
e
P
D
@T
C
= 100°C Maximum Power Dissipation
e
P
D
@T
C
= 25°C
Maximum Power Dissipation
T
J
,T
STG
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
c
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θcs
R
θJA
R
θJA
Junction-to-Case
i
Typ.
Max.
1.7
–––
62
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
fi
f
–––
0.50
–––
–––
Junction-to-Ambient( PCB mount)
gi
Notes
through
are on page 11
www.irf.com
1
12/9/04
IRF3706/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min. Typ. Max. Units
–––
0.021
6.0
7.3
11
–––
–––
–––
–––
–––
–––
–––
8.5
10.5
22
2
20
100
200
-200
nA
V
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
Drain-to-Source Breakdown Voltage 20
Breakdown Voltage Temp. Coefficie –––
–––
Static Drain-to-Source On-Resistan –––
–––
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
0.6
–––
–––
–––
–––
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
mΩ
V
GS
= 4.5V, I
D
V
GS
= 2.8V, I
D
e
= 12A
e
= 7.5A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Rg
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.8
23
8.0
5.5
16
6.8
87
17
4.8
2410
1070
140
–––
–––
35
12
8.3
24
–––
–––
–––
–––
–––
–––
–––
Max.
220
28
pF
ns
S
Ω
I
D
= 28A
nC
V
DS
= 10V
V
GS
= 4.5V
V
DD
= 10V
I
D
= 28A
R
G
= 1.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 10V
Conditions
V
DS
= 16V, I
D
= 57A
e
V
GS
= 0V, V
DS
=10V
e
ƒ = 1.0MHz
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
Ã
d
Typ.
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.88
0.82
45
65
49
78
77
h
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
T
J
= 125°C, I
S
= 36A, V
GS
T
J
= 25°C, I
F
= 36A, V
R
=20V
di/dt = 100A/µs
A
280
1.3
–––
68
98
74
120
ns
nC
ns
nC
V
Ã
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
e
= 0V
e
e
e
T
J
= 125°C, I
F
= 36A, V
R
=20V
di/dt = 100A/µs
2
www.irf.com
IRF3706/S/L
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF3706/S/L
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF3706/S/L
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
-
V
DD
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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