Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 7 X 7 MM, ROHS COMPLIANT, PLASTIC, FBGA-48
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | IDT (Integrated Device Technology) |
零件包装代码 | BGA |
包装说明 | LFBGA, BGA48,6X8,30 |
针数 | 48 |
Reach Compliance Code | compliant |
ECCN代码 | 3A991.B.2.A |
最长访问时间 | 20 ns |
其他特性 | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY |
I/O 类型 | COMMON |
JESD-30 代码 | S-PBGA-B48 |
JESD-609代码 | e1 |
长度 | 7 mm |
内存密度 | 1048576 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 16 |
湿度敏感等级 | 3 |
功能数量 | 1 |
端子数量 | 48 |
字数 | 65536 words |
字数代码 | 64000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 64KX16 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LFBGA |
封装等效代码 | BGA48,6X8,30 |
封装形状 | SQUARE |
封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | 260 |
电源 | 3.3 V |
认证状态 | Not Qualified |
座面最大高度 | 1.34 mm |
最大待机电流 | 0.01 A |
最小待机电流 | 3 V |
最大压摆率 | 0.12 mA |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3.15 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL |
端子节距 | 0.75 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | 30 |
宽度 | 7 mm |
Base Number Matches | 1 |
IDT71V016SA20BFGI8 | IDT71V016SA15BFG8 | IDT71V016SA20BFG8 | IDT71V016SA15BFGI8 | IDT71V016SA12BFG8 | IDT71V016SA12BFGI8 | |
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描述 | Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 7 X 7 MM, ROHS COMPLIANT, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 15ns, CMOS, PBGA48, 7 X 7 MM, ROHS COMPLIANT, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 7 X 7 MM, ROHS COMPLIANT, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 15ns, CMOS, PBGA48, 7 X 7 MM, ROHS COMPLIANT, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 7 X 7 MM, ROHS COMPLIANT, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 7 X 7 MM, ROHS COMPLIANT, PLASTIC, FBGA-48 |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 |
针数 | 48 | 48 | 48 | 48 | 48 | 48 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 20 ns | 15 ns | 20 ns | 15 ns | 12 ns | 12 ns |
其他特性 | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 |
JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 |
长度 | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm |
内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 48 | 48 | 48 | 48 | 48 | 48 |
字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 70 °C | 70 °C | 85 °C | 70 °C | 85 °C |
组织 | 64KX16 | 64KX16 | 64KX16 | 64KX16 | 64KX16 | 64KX16 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA |
封装等效代码 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 |
电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.34 mm | 1.34 mm | 1.34 mm | 1.34 mm | 1.34 mm | 1.34 mm |
最大待机电流 | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
最小待机电流 | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
最大压摆率 | 0.12 mA | 0.13 mA | 0.12 mA | 0.13 mA | 0.15 mA | 0.16 mA |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.75 mm | 0.75 mm | 0.75 mm | 0.75 mm | 0.75 mm | 0.75 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
宽度 | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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