IRSM505-084
IRSM515-084 Series
0.45Ω, 250V
Integrated Power Module for
Small Appliance Motor Drive Applications
Description
IRSM505-084 and IRSM515-084 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance
motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of
low R
DS(on)
Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a
familiar package. The modules are optimized for low EMI characteristics.
IRSM505-084 includes temperature feedback while IRSM515-084 does not.
Features
250V 3-phase inverter including high voltage gate drivers
Integrated bootstrap functionality
Low 0.45Ω (max, 25°C) R
DS(on)
Trench FREDFET
Under-voltage lockout for all channels
Matched propagation delay for all channels
Temperature feedback via NTC (IRSM505-084 only)
Optimized dV/dt for loss and EMI trade offs
Open-source for single and leg-shunt current sensing
3.3V logic compatible
Driver tolerant to negative transient voltage (-Vs)
Advanced input filter
Rugged design for PM fan and pump motors
Isolation 1900V
RMS
, 1min
Standard Pack
Base Part Number
NTC
Package Type
Form
SOP23
IRSM505-084
Yes
DIP23
DIP23A
SOP23
IRSM515-084
No
DIP23
DIP23A
Tube
Tube
Tube
Tube
Tube
Tube
Quantity
240
240
240
240
240
240
IRSM505-084PA
IRSM505-084DA
IRSM505-084DA2
IRSM515-084PA
IRSM515-084DA
IRSM515-084DA2
Orderable Part Number
1
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© 2014 International Rectifier
May 16, 2014
IRSM505-084
IRSM515-084 Series
Internal Electrical Schematic
1 COM
2 V
B1
3 V
CC1
4 HIN1
5 LIN1
Half-Bridge
HVIC
17 V+
1 COM
2 V
B1
3 V
CC1
17 V+
18 U/V
S1
4 HIN1
5 LIN1
Half-Bridge
HVIC
18 U/V
S1
6 NC
7 V
B2
8 V
CC2
9 HIN2
10 LIN2
19 V
R1
Integrated in HVIC
20 V
R2
Half-Bridge
HVIC
21 V/V
S2
6 NC
7 V
B2
8 V
CC2
9 HIN2
10 LIN2
19 V
R1
Integrated in HVIC
20 V
R2
Half-Bridge
HVIC
21 V/V
S2
11 VTH
12 V
B3
13 V
CC3
14 HIN3
15 LIN3
Half-Bridge
HVIC
22 V
R3
23 W/V
S3
11 NC
12 V
B3
13 V
CC3
14 HIN3
15 LIN3
Half-Bridge
HVIC
22 V
R3
23 W/V
S3
16 NC
16 NC
IRSM505-084
IRSM515-084
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at
manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table.
Symbol
BV
DSS
I
O
@ T
C
=25°C
I
OP
@ T
C
=25°C
P
d
@ T
C
=25°C
V
ISO
T
J
T
C
T
S
V
S1,2,3
V
B1,2,3
V
CC
V
IN
Description
MOSFET Blocking Voltage
DC Output Current per MOSFET
Pulsed Output Current per MOSFET (Note 1)
Maximum Power Dissipation per MOSFET
Isolation Voltage (1min)
Operating Junction Temperature
Operating Case Temperature
Storage Temperature
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side and Logic Supply voltage
Input Voltage of LIN, HIN
Min
---
---
---
---
---
-40
-40
-40
V
B1,2,3
- 20
-0.3
-0.3
COM -0.3
Max
250
4.6
15
18
1900
150
150
150
V
B1,2,3
+0.3
275
25
V
CC
+0.3
Unit
V
A
W
V
RMS
°C
°C
°C
V
V
V
V
Note 1: Pulse Width = 100µs, Single Pulse
2
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© 2014 International Rectifier
May 16, 2014
IRSM505-084
IRSM515-084 Series
Recommended Operating Conditions
Symbol
V+
V
S1,2,3
V
B1,2,3
V
CC
V
IN
Description
Positive DC Bus Input Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side and Logic Supply Voltage
Input Voltage of LIN, HIN, I
TRIP
, EN, FLT
Min
---
(Note 2)
V
S
+12
13.5
0
Max
200
200
V
S
+20
16.5
5
Unit
V
V
V
V
V
kHz
F
p
PWM Carrier Frequency
---
20
Note 2: Logic operational for Vs from COM-8V to COM+250V. Logic state held for Vs from COM-8V to COM-V
BS
.
Static Electrical Characteristics
(V
CC
-COM) = (V
B
-V
S
) = 15 V. T
C
= 25 C unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM and
are applicable to all six channels. The V
CCUV
parameters are referenced to COM. The V
BSUV
parameters are referenced to V
S
.
Symbol
BV
DSS
I
LKH
I
LKL
Description
Drain-to-Source Breakdown Voltage
Leakage Current of High Side FET
Leakage Current of Low Side FET Plus
Gate Drive IC
---
R
DS(on)
V
SD
V
IN,th+
V
IN,th-
V
CCUV+,
V
BSUV+
V
CCUV-,
V
BSUV-
V
CCUVH,
V
BSUVH
I
QBS
I
QBS, ON
I
QCC
I
QCC, ON
I
IN+
I
IN-
R
BR
Drain to Source ON Resistance
---
---
2.2
---
8
6.9
---
---
---
---
---
---
---
---
Min
250
Typ
---
0.5
1
0.34
0.8
0.9
---
---
8.9
7.7
1.2
40
40
1.6
1.7
5.9
---
250
0.45
---
---
---
0.8
9.8
8.5
---
60
60
4
4
18
2
---
Max
---
Units
V
µA
µA
Ω
Ω
V
V
V
V
V
V
µA
µA
mA
mA
µA
µA
Ω
V
IN
=3.3V
V
IN
=0V
T
J
=25°C
Conditions
T
J
=25°C, I
LK
=250µA
T
J
=25°C, V
DS
=250V
T
J
=25°C, V
DS
=250V
T
J
=25°C, V
CC
=15V, Id=2.0A
T
J
=150°C, V
CC
=15V, Id=2.0A
(Note 3)
T
J
=25°C, V
CC
=15V, I
D
=2.0A
o
Mosfet Body Diode Forward Voltage
Positive Going Input Threshold
Negative Going Input Threshold
V
CC
and V
BS
Supply Under-Voltage,
Positive Going Threshold
V
CC
and V
BS
supply Under-Voltage,
Negative Going Threshold
V
CC
and V
BS
Supply Under-Voltage
Lock-Out Hysteresis
Quiescent V
BS
Supply Current V
IN
=0V
Quiescent V
BS
Supply Current V
IN
=4V
Quiescent V
CC
Supply Current V
IN
=0V
Quiescent V
CC
Supply Current V
IN
=4V
Input Bias Current V
IN
=4V
Input Bias Current V
IN
=0V
Internal Bootstrap Equivalent Resistor
Value
Note 3: Characterized, not tested at manufacturing
3
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© 2014 International Rectifier
May 16, 2014
IRSM505-084
IRSM515-084 Series
Dynamic Electrical Characteristics
(V
CC
-COM) = (V
B
-V
S
) = 15 V. T
C
= 25 C unless otherwise specified.
Symbol
T
ON
T
OFF
T
FIL,IN
DT
E
ON
E
OFF
E
REC
E
ON,150
E
OFF,150
Description
Input to Output Propagation Turn-On
Delay Time
Input to Output Propagation Turn-Off
Delay Time
Input Filter Time (HIN, LIN)
Deadtime Inserted
Turn-on switching energy loss
Turn-off switching energy loss
Recovery energy loss
Turn-on switching energy loss
Turn-off switching energy loss
Min
---
---
200
---
---
---
---
---
---
---
Typ
0.7
0.9
300
400
15
3
6
20
3
7
Max
1.5
1.5
---
---
---
---
---
---
---
---
Units
µs
I
D
=120mA, V+=30V
See Fig.1
µs
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
V
+
=150V, I
D
=0.7A, L=40mH,
T
C
=150°C (Note 4)
V
+
=150V, I
D
=0.7A, L=40mH,
T
C
=25°C (Note 4)
V
IN
=0 & V
IN
=3.3V
V
IN
=0 & V
IN
=3.3V without
external deadtime
Conditions
o
E
REC,150
Recovery energy loss
Note 4: Characterized, not tested at manufacturing
Thermal and Mechanical Characteristics
Symbol
R
th(J-C)
Description
Junction to Case Thermal Resistance
Min
---
Typ
6.9
Max
---
Units
°C/W
Conditions
High Side V-Phase Mosfet
(Note 5)
Note 5: Characterized, not tested at manufacturing. Case temperature (T
C
) point shown in Figure 2.
Internal NTC – Thermistor Characteristics (IRSM505-084 Only)
Symbol
R
25
R
125
B
Description
Resistance
Resistance
B-constant (25-50°C)
Min
---
---
---
-40
Typ
47
1.41
4050
---
Max
---
---
---
125
Units
kΩ
kΩ
K
°C
Conditions
T
C
=25°C, ±5% tolerance
T
C
=125°C
±2% tolerance (Note 6)
Temperature Range
Note 6: See application notes for usage
4
www.irf.com
© 2014 International Rectifier
May 16, 2014
IRSM505-084
IRSM515-084 Series
Qualification Information
†
Qualification Level
Industrial
MSL3
Yes
Class B
Class 2
†††
††
Moisture Sensitivity Level
RoHS Compliant
Machine Model
ESD
Human Body Model
†
††
†††
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
SOP23 package only. Higher MSL ratings may be available for the specific package types listed here.
Please contact your International Rectifier sales representative for further information.
5
www.irf.com
© 2014 International Rectifier
May 16, 2014
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