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Datasheet> 器件分类 > 模拟混合信号IC> 消费电路> ISD1112X

ISD1112X: 产品描述Speech Synthesizer With RCDG, 12s, CMOS, DIE-28; 产品类别模拟混合信号IC 消费电路; 文件大小283KB，共32页; 制造商Winbond(华邦电子); 官网地址http://www.winbond.com.tw

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ISD1112X概述

Speech Synthesizer With RCDG, 12s, CMOS, DIE-28

ISD1112X规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Winbond(华邦电子)
零件包装代码	DIE
包装说明	DIE,
针数	28
Reach Compliance Code	unknown
应用	CAR STEREO; HANDSET; TRANSFORMER
商用集成电路类型	SPEECH SYNTHESIZER WITH RCDG
JESD-30 代码	R-XUUC-N28
功能数量	1
端子数量	28
片上内存类型	EEPROM
最高工作温度	50 °C
最低工作温度
封装主体材料	UNSPECIFIED
封装代码	DIE
封装形状	RECTANGULAR
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
最长读取时间	12 s
最大供电电压 (Vsup)	6.5 V
最小供电电压 (Vsup)	4.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

ISD1112X相似产品对比

	ISD1112X	ISD1112P	ISD1112PY	ISD1112S	ISD1110PY	ISD1110SY
描述	Speech Synthesizer With RCDG, 12s, CMOS, DIE-28	Speech Synthesizer With RCDG, 12s, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28	Speech Synthesizer With RCDG, 12s, CMOS, PDIP28, 0.600 INCH, LEAD FREE, PLASTIC, DIP-28	Speech Synthesizer With RCDG, 12s, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28	Speech Synthesizer With RCDG, 10s, CMOS, PDIP28, 0.600 INCH, LEAD FREE, PLASTIC, DIP-28	Speech Synthesizer With RCDG, 10s, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOIC-28
是否Rohs认证	不符合	不符合	符合	不符合	符合	符合
零件包装代码	DIE	DIP	DIP	SOIC	DIP	SOIC
包装说明	DIE,	DIP, DIP28,.6	DIP, DIP28,.6	SOP, SOP28,.4	DIP, DIP28,.6	SOP, SOP28,.4
针数	28	28	28	28	28	28
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
应用	CAR STEREO; HANDSET; TRANSFORMER	CAR STEREO; HANDSET; TRANSFORMER	CAR STEREO; HANDSET; TRANSFORMER	CAR STEREO; HANDSET; TRANSFORMER	CAR STEREO; HANDSET; TRANSFORMER	CAR STEREO; HANDSET; TRANSFORMER
商用集成电路类型	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG
JESD-30 代码	R-XUUC-N28	R-PDIP-T28	R-PDIP-T28	R-PDSO-G28	R-PDIP-T28	R-PDSO-G28
功能数量	1	1	1	1	1	1
端子数量	28	28	28	28	28	28
片上内存类型	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
最高工作温度	50 °C	70 °C	70 °C	70 °C	70 °C	70 °C
封装主体材料	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIE	DIP	DIP	SOP	DIP	SOP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	UNCASED CHIP	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	240	NOT SPECIFIED	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最长读取时间	12 s	12 s	12 s	12 s	10 s	10 s
最大供电电压 (Vsup)	6.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
表面贴装	YES	NO	NO	YES	NO	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
端子位置	UPPER	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30	NOT SPECIFIED	40
Base Number Matches	1	1	1	1	1	1
厂商名称	Winbond(华邦电子)	Winbond(华邦电子)	Winbond(华邦电子)	Winbond(华邦电子)	-	-
长度	-	36.83 mm	36.83 mm	17.93 mm	36.83 mm	17.93 mm
封装等效代码	-	DIP28,.6	DIP28,.6	SOP28,.4	DIP28,.6	SOP28,.4
电源	-	5 V	5 V	5 V	5 V	5 V
座面最大高度	-	4.83 mm	4.83 mm	2.64 mm	4.83 mm	2.64 mm
最大压摆率	-	30 mA	30 mA	30 mA	30 mA	30 mA
端子节距	-	2.54 mm	2.54 mm	1.27 mm	2.54 mm	1.27 mm
宽度	-	15.24 mm	15.24 mm	7.52 mm	15.24 mm	7.52 mm

ISD1112X

ISD1112X概述

ISD1112X规格参数

ISD1112X相似产品对比

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