BTS 282 Z
Speed TEMPFET
®
•
N-Channel
•
Enhancement mode
•
Logic Level Input
•
Analog driving possible
•
Fast switching up to 1 MHz
•
Potential-free temperature sensor with
thyristor characteristics
•
Overtemperature protection
•
Avalanche rated
•
High current pinning
1
7
VPT05167
Type
BTS 282 Z
V
DS
49 V
R
DS(on)
6.5 mΩ
Package
P-TO220-7-3
P-TO220-7-180
Marking
-
Ordering Code
Q67060-S6004-A2
Q67060-S6005-A2
Pin
1
2
3
4
5
6
7
Symbol
S
G
A
D
K
S
S
Function
Source
Gate
Anode Temperature Sensor
Drain
Cathode Temperature Sensor
Source
Source
Semiconductor Group
1
1999-03-04
BTS 282 Z
Maximum Ratings, at
T
j
= 25°C unless otherwise specified
Parameter
Drain source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate source voltage
Nominal load current (ISO 10483)
Symbol
Value
49
49
±14
A
36
51
80
320
2
250
-40 ...+175
-55 ... +150
E
40/150/56
J
W
°C
Unit
V
V
DS
V
DGR
V
GS
I
D(ISO)
V
GS
= 4.5 V,
V
DS
≤
0.5 V,
T
C
= 85 °C
V
GS
= 10 V,
V
DS
≤
0.5 V,
T
C
= 85 °C
Continuous drain current
1)
I
D
I
D puls
E
AS
P
tot
T
j
T
stg
T
C
= 100 °C,
V
GS
= 4.5V
Pulsed drain current
Avalanche energy, single pulse
I
D
= 36 A,
R
GS
= 25
Ω
Power dissipation
T
C
= 25 °C
Operating temperature
2)
Storage temperature
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
Semiconductor Group
2
1999-03-04
BTS 282 Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Thermal Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
2
cooling area
1)
Static Characteristics
Drain- source breakdown voltage
Symbol
min.
Values
typ.
-
-
33
max.
0.6
62
-
K/W
Unit
R
thJC
R
th(JA)
R
th(JA)
-
-
-
V
(BR)DSS
V
GS(th)
I
DSS
49
1.2
-
1.6
-
2
V
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 240 µA
Zero gate voltage drain current
µA
-
-
-
-
0.1
-
0.1
1
100
nA
-
-
-
-
10
20
8.2
5.8
100
100
9.5
6.5
mΩ
V
DS
= 45 V,
V
GS
= 0 V,
T
j
= -40 °C
V
DS
= 45 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 45 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
GSS
V
GS
= 20 V,
V
DS
= 0 V,
T
j
= 25 °C
V
GS
= 20 V,
V
DS
= 0 V,
T
j
= 150 °C
Drain-Source on-state resistance
R
DS(on)
V
GS
= 4.5 V,
I
D
= 36 A
V
GS
= 10 V,
I
D
= 36 A
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Semiconductor Group
3
1999-03-04
BTS 282 Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Dynamic Characteristics
Forward transconductance
Symbol
min.
Values
typ.
70
3850
1090
570
30
max.
-
4800
1357
715
45
ns
S
pF
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
30
-
-
-
-
V
DS
>2*
I
D
*
R
DS(on)max
,
I
D
= 80 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Ω
Rise time
t
r
-
37
56
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Ω
Turn-off delay time
t
d(off)
-
70
105
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Ω
Fall time
t
f
-
36
55
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Ω
Gate Charge Characteristics
Gate charge at threshold
Q
g(th)
Q
g(5)
Q
g(total)
V
(plateau)
4
-
-
-
-
3.8
92
155
3.4
5.7
138
232
-
nC
V
DD
= 40 V, ID
≥0,1
A ,
V
GS
= 0 to 1 V
Gate charge at 5.0 V
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 5 V
Gate charge total
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
V
DD
= 40 V,
I
D
= 80 A
Semiconductor Group
1999-03-04
BTS 282 Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Reverse Diode
Inverse diode continuous forward current
Symbol
min.
Values
typ.
-
-
1.25
105
0.31
max.
-
-
1.6
157
0.47
V
ns
µC
A
Unit
I
S
I
FM
V
SD
t
rr
Q
rr
80
320
-
-
-
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 95 A
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F
=
I
S
, di
F
/dt = 100 A/µs
Sensor Characteristics
Forward voltage
V
AK(on)
-
-
1.3
-
-
-
-
1.4
10
5
600
4
V
I
AK(on)
= 5 mA,
T
j
= -40...+150 °C
Sensor override
t
P
= 100
µs,
T
j
= -40...+150 °C
Forward current
I
AK(on)
-
-
mA
T
j
= -40...+150 °C
Sensor override
t
P
= 100
µs,
T
j
= -40...+150 °C
Temperature sensor leakage current
I
AK(off)
-
µA
T
j
= 150 °C
Semiconductor Group
5
1999-03-04
stm32/stm8
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