MP04XX780
MP04XX780
Dual Rectifier Diode Module
PDS5622-1.0 July 2003
FEATURES
I
Dual Device Module
I
Electrically Isolated Package
I
Pressure Contact Construction
I
International Standard Footprint
I
Alumina (Non-toxic) Isolation Medium
KEY PARAMETERS
V
RRM
4500V
782A
I
F(AV)
15000A
I
FSM (per arm)
1228A
I
F(RMS)
3000V
V
isol
APPLICATIONS
I
Power Supplies
I
Rectifiers
I
Battery Chargers
Code
HB
G
Conditions
GN
1
Circuit
2
3
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
RRM
V
4500
4400
4200
4000
1
2
3
1
2
3
Fig.1 Circuit diagrams
T
vj
= –40˚ to 150˚C,
V
RSM
= V
RRM
+ 100V
MP04XX780-45
MP04XX780-44
MP04XX780-42
MP04XX780-40
Lower voltage grades available
ORDERING INFORMATION
Order As:
MP04HB780-45
or
MP04HB780-44
or
MP04HB780-42
or
MP04HB780-40
MP04G780-45
or
MP04G780-44
or
MP04G780-42
or
MP04G780-40
MP04GN780-45
or
MP04GN780-44
or
MP04GN780-42
or
MP04GN780-40
Note: When ordering, please use the complete part number.
Please quote full part number in all correspondance.
Outline type code:
MP04
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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MP04XX780
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Symbol
I
F(AV)
Parameter
Mean forward current
Conditions
Half wave resistive load
T
case
= 75
o
C
T
case
= 85
o
C
T
case
= 100
o
C
I
F(RMS)
RMS value
T
case
= 75
o
C
T
case
= 85
o
C
T
case
= 100
o
C
I
FSM
I
2
t
I
FSM
I
2
t
V
isol
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Isolation voltage
10ms half sine; T
j
= 150
o
C
V
R
= 0
10ms half sine; T
j
= 150
o
C
V
R
= 50% V
RRM
Commoned terminals to base plate AC RMS, 1 min, 50Hz
Max.
782
712
596
1228
1118
937
15
1.125 x 10
6
12
0.72 x 10
6
3000
Units
A
A
A
A
A
A
kA
A
2
s
kA
A
2
s
V
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to case
(per diode)
dc
Halfwave
3 Phase
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Screw torque
Mounting
Electrical connections
-
Weight (nominal)
-
Reverse (blocking)
-
Conditions
Min.
-
-
Max.
0.056
0.060
0.066
150
150
-
Units
o
C/W
o
C/W
C/W
o
-
-
–40
6 (53)
-
-
o
C
C
o
Nm (lb.ins)
12 (106) Nm (lb.ins)
1580
g
2/6
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MP04XX780
CHARACTERISTICS
Symbol
I
RRM
Q
S
I
RR
V
TO
r
T
Parameter
Peak reverse current
Total stored charge
Peak recovery current
Threshold voltage. See Note 1.
Slope resistance. See Note 1.
Conditions
At V
RRM
, T
case
= 150
o
C
I
F
= 1000A, dI
RR
/dt = 3A/µs
T
case
= 150˚C, V
R
= 100V
At T
vj
= 150˚C
At T
vj
= 150˚C
Min.
-
-
-
-
-
Max.
50
2000
85
0.75
0.44
Units
mA
µC
A
V
mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in
the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to
the impedance of the busbars from the terminals to the semiconductor.
CURVES
2500
2500
Measured under pulse
conditions
dc
Half wave
2000
Instantaneous forward current, I
F
- (A)
2000
3 phase
Mean power dissipation - (W)
1500
1500
6 phase
1000
T
j
= 150˚C
T
j
= 25˚C
1000
500
500
0
0.5
1.0
1.5
Instantaneous forward voltage, V
F
- (V)
2.0
0
0
500
1000
1500
2000
Mean forward current, I
F(AV)
- (A)
Fig.3 Maximum (limit) forward characteristics
Fig.4 Power dissipation curves
3/6
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MP04XX780
10000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 1000A
1000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 1000A
Reverse recovery current, I
rr
- (A)
I
F
Q
S
dI
F
/dt
I
RM
Stored charge, Q
S
- (µC)
1000
100
100
0.1
1.0
10
100
10
0.1
1.0
10
100
Rate of decay of on-state current, dI
F
/dt - (A/µs)
Rate of decay of forward current, dI
F
/dt - (A/µs)
Fig.5 Maximum stored charge
30
I
2
t
=
Î
2
xt
2
25
Peak half sine forward current - (kA)
0.06
Fig.6 Maximum reverse recovery current
750
700
Thermal resistance, R
th(j-c)
- (°C/W)
0.05
20
650
I
2
t value - (A
2
s x 10
3
)
0.04
15
600
0.03
10
I
2
t
5
550
0.02
500
0.01
0
1
ms
10
1
2 3
5
10
20
450
50
0
0.001
0.01
0.1
Cycles at 50Hz
Duration
1
10
Time - (Seconds)
100
1000
Fig.7 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
@ T
c
- 150˚C)
4/6
Fig.8 Transient thermal impedance - dc
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MP04XX780
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Recommended fixings for mounting: M6 socket head cap screws.
Nominal weight: 1580g
Module outline type code: MP04
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
temperature at 75
˚
C if full rated current is to be achieved. Power
dissipation may be calculated by use of V
T(TO)
and r
T
information
in accordance with standard formulae. We can provide
assistance with calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
After application of thermal compound, place the module
squarely over the mounting holes, (or ‘T’ slots) in the heatsink.
Fit and finger tighten the recommended fixing bolts at each end.
Using a torque wrench, continue to tighten the fixing bolts by
rotating each bolt in turn no more than 1/4 of a revolution at a
time, until the required torque of 6Nm (55lbs.ins) is reached on
all bolts at both ends.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material. Care should be taken to ensure no
foreign particles remain.
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