Band Switching Diodes
MA2C856
Silicon epitaxial planar type
Unit : mm
For band switching
φ
0.45 max.
•
Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole
•
Less voltage dependence of the terminal capacitance C
t
•
Low forward dynamic resistance r
f
•
Optimum for a band switching of a tuner
0.2 max.
0.2 max.
I
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
T
opr
T
stg
Rating
35
100
−25
to
+85
−55
to
+100
Unit
V
mA
°C
°C
2
φ
1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
*
Forward voltage (DC)
Terminal capacitance
Forward dynamic resistance
Symbol
I
R
V
F
C
t
r
f
V
R
= 33 V
I
F
= 100 mA
V
R
= 15 V, f = 1 MHz
I
F
= 3 mA, f = 100 MHz
Conditions
Min
Typ
Max
100
1
2
0.85
Unit
nA
V
pF
Ω
Note) 1．
Rated input/output frequency: 100 MHz
2． : Measurement with the beam shielded
*
I
Cathode Indication
Type No.
Color
MA2C856
Yellow
13 min.
2.2
±
0.3
13 min.
I
Features
COLORED BAND
INDICATES
CATHODE
1
1
MA2C856
I
F
V
F
10
2
10
3
T
a
=
125°C
Band Switching Diodes
I
R
V
R
10
3
I
R
T
a
10
2
10
2
Forward current I
F
(mA)
10
Reverse current I
R
(nA)
Reverse current I
R
(nA)
75°C
10
V
R
=
25 V
10
10 V
1
1
1
10
−1
75°C
10
−2
T
a
=
125°C
0
0.2
0.4
0.6
25°C
−
20°C
0.8
1.0
10
−1
25°C
10
−2
10
−1
10
−2
0
10
20
30
40
50
0
40
80
120
160
Forward voltage V
F
(V)
Reverse voltage V
R
(V)
Ambient temperature T
a
(
°C
)
r
f
f
1.6
I
F
=
3 mA
T
a
=
25°C
8
r
f
f
I
F
=
3 mA
T
a
=
25°C
2.0
r
f
I
F
f
=
100 MHz
T
a
=
25°C
Forward dynamic resistance r
f
(
Ω
)
Forward dynamic resistance r
f
(
Ω
)
Forward dynamic resistance r
f
(
Ω
)
1.2
6
1.5
0.8
4
1.0
0.4
2
0.5
0
10
30
100
300
1 000
0
1
3
10
30
100
300
1 000
0
10
−1
1
10
10
2
Frequency f (MHz)
Frequency f (MHz)
Forward current I
F
(mA)
C
t
V
R
3.2
f
=
1 MHz
T
a
=
25°C
Terminal capacitance C
t
(pF)
2.4
1.6
0.8
0
0
10
20
30
40
Reverse voltage V
R
(V)
2
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