Switching Diodes
MA6X128
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65
±
0.15
2.8
−
0.3
1.5
6
1.9
±
0.2
0.95
0.95
5
+
0.25
−
0.05
+
0.2
0.65
±
0.15
0.3
−
0.05
1
+
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
*1
Peak forward current
*1
Non-repetitive peak forward
surge current
*1,2
Junction temperature
Storage temperature
Note) *1 : Value for single diode
*2 : t = 1 s
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
225
500
150
−55
to
+150
Unit
V
V
mA
mA
mA
°C
°C
1 : Cathode 3,4
4 : Cathode 1,2
2 : Anode 1
5 : Anode 3
3 : Anode 2
6 : Anode 4
Mini Type Package (6-pin)
Marking Symbol: M2V
Internal Connection
6
5
4
1
2
3
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
=
75 V
I
F
=
100 mA
I
R
=
100
µA
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
Ω
80
2
3
Conditions
Min
Typ
Max
100
1.2
Unit
nA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0 to 0.1
•
Four-element contained in one package, allowing high-density
mounting
•
Centrosymmetrical wiring, allowing to free from the taping direc-
tion
•
The mirror image wiring of (MA6X123)
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
•
High breakdown voltage (V
R
= 80 V)
2.9
−
0.05
+
0.2
2
4
3
1.1
−
0.1
0.1 to 0.3
0.4
±
0.2
0.8
0.16
−
0.06
+
0.2
+
0.1
1.45
I
Features
1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
