MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC321/D
Triacs
Silicon Bidirectional Thyristors
. . . designed for full-wave ac control applications primarily in industrial environments
needing noise immunity.
•
Guaranteed High Commutation Voltage
dv/dt — 500 V/µs Min @ TC = 25°C
•
High Blocking Voltage — VDRM to 800 V
•
Photo Glass Passivated Junction for Improved Power Cycling Capability and
Reliability
MAC321
Series
TRIACs
20 AMPERES RMS
200 thru 800 VOLTS
MT2
G
MT1
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Open Gate)
MAC321-4
MAC321-6
MAC321-8
MAC321-10
Peak Gate Voltage
On-State Current RMS (TC = +75°C
Full Cycle Sine Wave 50 to 60 Hz)
Peak Surge Current (One Full Cycle, 60 Hz, T C = +75°C
preceded and followed by Rated Current)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power (T C = +75°C, Pulse Width = 2.0
µs)
Average Gate Power (T C = +75°C, t = 8.3 ms)
Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM
200
400
600
800
VGM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
10
20
150
93
20
0.5
2.0
–40 to +125
–40 to +150
Volts
Amp
Amp
A2s
Watts
Watt
Amp
°C
°C
Value
Unit
Volts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.8
Unit
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1
MAC321 Series
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25°C
TJ = +125°C
Peak On-State Voltage (Either Direction)
(ITM = 28 A Peak; Pulse Width
2.0 ms, Duty Cycle
Symbol
IDRM
—
—
VTM
IGT
—
—
—
VGT
—
—
—
0.2
IH
—
—
—
—
—
—
2.0
2.0
2.0
—
100
mA
—
—
—
100
100
100
Volts
—
—
—
1.4
10
2.0
1.7
µA
mA
Volts
mA
Min
Typ
Max
Unit
p
p
2.0%)
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
Turn-On Time
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA,
Rise Time = 0.1
µs,
Pulse Width = 2.0
µs)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open)
TJ = 25°C
TJ = +125°C
tgt
—
1.5
—
µs
dv/dt(s)
500
200
—
—
—
—
V/µs
TYPICAL CHARACTERISTICS
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
130
PD(AV) , AVERAGE POWER (WATT)
120
110
100
90
80
70
60
50
0
α
α
= CONDUCTION
ANGLE
2
4
6
8
10
12
14
16
IT(RMS), RMS ON-STATE CURRENT (AMP)
18
20
α
180°
dc
α
= 30°
60°
90°
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
IT(RMS), RMS ON-STATE CURRENT (AMP)
18
20
60°
α
= 30°
α
α
= CONDUCTION
ANGLE
90°
α
180°
dc
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
2
Motorola Thyristor Device Data
MAC321 Series
VGTM , GATE TRIGGER VOLTAGE (NORMALIZED)
3
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2
100
70
50
30
20
i TM , INSTANTANEOUS FORWARD CURRENT (AMP)
TJ = 25°C
125°C
1
0.7
0.5
10
7
5
3
2
0.3
–60
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Voltage
I GTM , GATE TRIGGER CURRENT (NORMALIZED)
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1
0.7
0.5
1
0.7
0.5
0.3
0.2
0.3
–60
–40
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE(°C)
120
140
0.1
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 4. Typical Gate Trigger Current
3
I H , HOLDING CURRENT (NORMALIZED)
2
300
TSM , PEAK SURGE CURRENT (AMP)
200
Figure 5. Maximum On-State Characteristics
GATE OPEN
APPLIES TO EITHER DIRECTION
1
0.7
0.5
100
70
50
TC = 80°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
1
2
3
5
NUMBER OF CYCLES
7
10
0.3
–60
30
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Holding Current
Figure 7. Maximum On-Repetitive Surge Current
Motorola Thyristor Device Data
3
MAC321 Series
1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.5
0.2
0.1
0.05
Z
θJC(t)
= r(t)
•
R
θJC
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
t, TIME (ms)
100
200
500
1k
2k
5k
10 k
Figure 8. Thermal Response
4
Motorola Thyristor Device Data
MAC321 Series
PACKAGE DIMENSIONS
–T–
B
F
C
SEATING
PLANE
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.055
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.39
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
S
STYLE 4:
PIN 1.
2.
3.
4.
4
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
J
R
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
CASE 221A-04
(TO–220AB)
Motorola Thyristor Device Data
5
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