Datasheet> 器件分类 > 分立半导体> 二极管> S4GBL20-C

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S4GBL20-C: 产品描述Bridge Rectifier Diode, 4A, 200V V(RRM),; 产品类别分立半导体二极管; 文件大小184KB，共2页; 制造商SECOS; 官网地址http://www.secosgmbh.com/; 标准

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S4GBL20-C概述

Bridge Rectifier Diode, 4A, 200V V(RRM),

S4GBL20-C规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SECOS
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	UL RECOGNIZED
配置	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON
二极管类型	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1.05 V
JESD-30 代码	R-PSIP-T4
最大非重复峰值正向电流	150 A
元件数量	4
相数	1
端子数量	4
最高工作温度	150 °C
最大输出电流	4 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
最大重复峰值反向电压	200 V
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
Base Number Matches	1

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S4GBL20-C ~ S4GBL80-C

Elektronische Bauelemente

Voltage 200V ~ 800V

4.0 Amp Glass Passivited Bridge Rectifiers

RoHS Compliant Product

FEATURES



Ideal for printed circuit board

Low forward voltage drop, high current capability

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

These are Halogen & Pb Free components

This series is UL recognized under Component Index,

file number E255340

GBL

REF.

Millimeter

Min.

Max.

19.6

20.6

10.7

11.3

2.3

2.7

12.7

14.2

1.3

1.7

REF.

Millimeter

Min.

Max.

0.9

1.15

3.3

3.7

4.8

5.3

0.8

1.2

0.3

0.6

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Part Number

Parameter

Maximum Recurrent Peak Reverse Voltage

Average Rectified Output Current @50H

sine

wave, R-load, T

=25°C

Peak Forward Surge Current @

50H

sine wave, 1 cycle, T

=150°C

Maximum Peak Forward Voltage

Peak Reverse Current

Symbol

S4GBL20-C

S4GBL40-C

S4GBL60-C

S4GBL80-C

Unit

200

400

150

1.05

150, -40~150

600

800

μA

°C/W

°C

RRM

FSM

RRM

θJA

θJL

STG

t Rating for Fusing @1ms≤t＜8.3ms,

=25°C,Rating of per diode

Typical Thermal Resistance(without heat sink)

Operating and Storage temperature range

Notes：

1. V

RRM

, Pulse measurement, Rating of per diode.

2. I

=2A, Pulse measurement, Rating of per diode

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Apr-2013 Rev. B

Page 1 of 2

S4GBL20-C相似产品对比

	S4GBL20-C	S4GBL40-C	S4GBL60-C	S4GBL80-C
描述	Bridge Rectifier Diode, 4A, 200V V(RRM),	Bridge Rectifier Diode, 4A, 400V V(RRM),	Bridge Rectifier Diode, 4A, 600V V(RRM),	Bridge Rectifier Diode, 4A, 800V V(RRM),
是否Rohs认证	符合	符合	符合	符合
厂商名称	SECOS	SECOS	SECOS	SECOS
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
其他特性	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
配置	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1.05 V	1.05 V	1.05 V	1.05 V
JESD-30 代码	R-PSIP-T4	R-PSIP-T4	R-PSIP-T4	R-PSIP-T4
最大非重复峰值正向电流	150 A	150 A	150 A	150 A
元件数量	4	4	4	4
相数	1	1	1	1
端子数量	4	4	4	4
最高工作温度	150 °C	150 °C	150 °C	150 °C
最大输出电流	4 A	4 A	4 A	4 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE
最大重复峰值反向电压	200 V	400 V	600 V	800 V
表面贴装	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
Base Number Matches	1	1	1	-

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