5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 配置 | Single |
| 最大漏极电流 (Abs) (ID) | 5 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 40 W |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| IRF621R | IRF622R | IRF620R | IRF623R | |
|---|---|---|---|---|
| 描述 | 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | _compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | Single | Single | Single | Single |
| 最大漏极电流 (Abs) (ID) | 5 A | 4 A | 5 A | 4 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 40 W | 40 W | 40 W | 40 W |
| 表面贴装 | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | - | Renesas(瑞萨电子) |
| Base Number Matches | 1 | 1 | 1 | - |
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