NAND Gate, HCT Series, 3-Func, 3-Input, CMOS, CDIP14
| 参数名称 | 属性值 |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY |
| 系列 | HCT |
| JESD-30 代码 | R-CDIP-T14 |
| 逻辑集成电路类型 | NAND GATE |
| 功能数量 | 3 |
| 输入次数 | 3 |
| 端子数量 | 14 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 传播延迟（tpd） | 24 ns |
| 认证状态 | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 总剂量 | 100k Rad(Si) V |
| Base Number Matches | 1 |
| 5962R9576501VCX | 5962R9576501VXX | 5962R9576501VCC | HCTS10KMSH | HCTS10DMSH | |
|---|---|---|---|---|---|
| 描述 | NAND Gate, HCT Series, 3-Func, 3-Input, CMOS, CDIP14 | NAND Gate, HCT Series, 3-Func, 3-Input, CMOS, CDFP14 | NAND Gate, HCT Series, 3-Func, 3-Input, CMOS, CDIP14 | NAND Gate, HCT Series, 3-Func, 3-Input, CMOS, CDFP14 | NAND Gate, HCT Series, 3-Func, 3-Input, CMOS, CDIP14 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY |
| 系列 | HCT | HCT | HCT | HCT | HCT |
| JESD-30 代码 | R-CDIP-T14 | R-CDFP-F14 | R-CDIP-T14 | R-CDFP-F14 | R-CDIP-T14 |
| 逻辑集成电路类型 | NAND GATE | NAND GATE | NAND GATE | NAND GATE | NAND GATE |
| 功能数量 | 3 | 3 | 3 | 3 | 3 |
| 输入次数 | 3 | 3 | 3 | 3 | 3 |
| 端子数量 | 14 | 14 | 14 | 14 | 14 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLATPACK | IN-LINE | FLATPACK | IN-LINE |
| 传播延迟（tpd） | 24 ns | 24 ns | 24 ns | 28 ns | 28 ns |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | FLAT | THROUGH-HOLE | FLAT | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V |
| Base Number Matches | 1 | 1 | 1 | - | - |
| JESD-609代码 | - | - | e4 | e0 | e0 |
| 负载电容（CL） | - | - | 50 pF | 50 pF | 50 pF |
| 端子面层 | - | - | GOLD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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