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BCW70LT1
General Purpose
Transistors
PNP Silicon
Features
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•
Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
EBO
I
C
Value
−45
−5.0
−100
Unit
Vdc
Vdc
mAdc
2
EMITTER
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
Unit
mW
mW/°C
°C/W
mW
1
2
3
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
mW/°C
°C/W
°C
H2 M
G
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
H2 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BCW70LT1
BCW70LT1G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 2
Publication Order Number:
BCW70LT1/D
BCW70LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −2.0 mAdc, I
B
= 0)
Collector−Emitter Breakdown Voltage
(I
C
= −100
mAdc,
V
EB
= 0)
Emitter−Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= −20 Vdc, I
E
= 0)
(V
CB
= −20 Vdc, I
E
= 0, T
A
= 100°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
Base−Emitter On Voltage
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(I
E
= 0, V
CB
= −10 Vdc, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
obo
−
N
F
−
10
dB
7.0
pF
h
FE
215
V
CE(sat)
−
V
BE(on)
−0.6
−0.75
Vdc
−0.3
Vdc
500
−
V
(BR)CEO
−45
V
(BR)CES
−50
V
(BR)EBO
−5.0
I
CBO
−
−
−100
−10
nAdc
mAdc
−
Vdc
−
Vdc
−
Vdc
Symbol
Min
Max
Unit
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2
BCW70LT1
TYPICAL NOISE CHARACTERISTICS
(V
CE
= − 5.0 Vdc, T
A
= 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
I
C
= 10
mA
30
mA
3.0
2.0
1.0 mA
100
mA
300
mA
BANDWIDTH = 1.0 Hz
R
S
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10 k
0.1
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
300
mA
100
mA
30
mA
10
mA
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= − 5.0 Vdc, T
A
= 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700 1.0 k
BANDWIDTH = 1.0 Hz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
0.5 dB
10 Hz to 15.7 kHz
Noise Figure is Defined as:
NF
+
20 log10
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I = Noise Current of the Transistor referred to the input.
n
(Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R = Source Resistance (Ohms)
S
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
500 700 1.0 k
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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3
BCW70LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
T
A
= 25°C
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
IC, COLLECTOR CURRENT (mA)
100
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
300
mA
60
I
B
= 400
mA
350
mA
250
mA
200
mA
150
mA
0.6
0.4
40
20
0
100
mA
50
mA
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 6. Collector Saturation Region
Figure 7. Collector Characteristics
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
T
J
= 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
*APPLIES for I
C
/I
B
≤
h
FE
/2
0.8
*q
VC
for V
CE(sat)
0
− 55°C to 25°C
0.8
25°C to 125°C
1.6
q
VB
for V
BE
0.2
− 55°C to 25°C
50
100
25°C to 125°C
V
BE(sat)
@ I
C
/I
B
= 10
0.6
0.4
0.2
0
0.1
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0.5 1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
2.4
0.1
0.5
1.0 2.0
5.0
10 20
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
t
d
@ V
BE(off)
= 0.5 V
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
1000
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
−1.0
t
s
V
CC
= − 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
2.0
3.0
20 30
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
50 70
100
− 2.0 − 3.0 − 5.0 − 7.0 −10
− 20 − 30
I
C
, COLLECTOR CURRENT (mA)
− 50 − 70 −100
Figure 10. Turn−On Time
Figure 11. Turn−Off Time
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