1N821UR-1 thru 1N829AUR-1
6.2 & 6.55 Volt ZENER REFERENCE DIODES
Available on
commercial
versions
Qualified per MIL-PRF-19500/159
*Qualified Levels:
JAN, JANTX,
JANTXV and JANS
(available on some part
numbers)
DESCRIPTION
The 1N821UR-1 thru 1N829AUR-1 series of surface mount Zero-TC Reference Diodes
provides a selection of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to
as low as 0.0005 %/
o
C for minimal voltage change with temperature when operated at 7.5 mA.
These glass surface mount DO-213AA (MELF) reference diodes are optionally available with
an internal-metallurgical-bond as well as RoHS compliant option for commercial applications.
This type of bonded Zener package construction is also available in JAN, JANTX, and
JANTXV military qualifications (RoHS compliant option not applicable). Microsemi also offers
numerous other Zener Reference Diode products for a variety of other voltages up to 200 V.
Important:
For the latest information, visit our website
http://www.microsemi.com.
DO-213AA
Package
Also available in:
DO-35
(DO-204AH)
(axial-leaded)
1N821 – 1N829
FEATURES
•
•
•
•
•
•
•
•
Surface mount equivalent of JEDEC registered 1N821 thru 1N829.
Lowered Zener impedance option available.
Reference voltage selection of 6.2 V & 6.55 V +/-5% with further tight tolerance options on
commercial at lower voltage. (Excludes 1N826 and 1N828.)
Temperature compensated.
Internal metallurgical bond.
Double plug construction.
*JAN, JANTX, JANTXV and JANS qualification per MIL-PRF-19500/159 available on 1N821, 823,
825, 827 and 829.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
•
•
•
•
Provides minimal voltage changes over a broad temperature range.
For instrumentation and other circuit designs requiring a stable voltage reference.
Maximum temperature coefficient selections available from 0.01 %/ºC to 0.0005 %/ºC.
Tight reference voltage tolerances available on commercial with center nominal value of 6.2 V by
adding designated tolerance such as 1%, 2%, 3%, etc. after the part number for identification.
(Excludes 1N826 and 1N828.)
Small surface-mount footprint.
Nonsensitive to ESD per MIL-STD-750 Method 1020.
Typical low capacitance of 100 pF or less.
•
•
•
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage temperature
Power Dissipation
(Note 1)
Maximum Zener Current
Solder Pad Temperatures at 10 s
o
Symbol
T
J
and T
STG
P
D
I
ZM
T
SP
Value
-55 to +175
500
70
Unit
o
C
mW
mA
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
260
C
Notes:
1. @ T
L
= 25 C and maximum current I
ZM
of 70 mA. For optimum voltage-temperature stability, I
Z
= 7.5 mA
o
o
(less than 50 mW in dissipated power). Derate at 3.33 mW/ C above T
A
= +25 C
.
T4-LDS-0220-1, Rev. 1 (111514)
©2011 Microsemi Corporation
Page 1 of 6
1N821UR-1 thru 1N829AUR-1
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
•
CASE: Hermetically sealed glass case. DO-213AA package.
TERMINALS: Leads, Tin-Lead (military) or RoHS compliant annealed matte Tin plating (commercial grade only) solderable per
MIL-STD-750, Method 2026.
MARKING: Cathode band (except double anode 1N822 and 1N824).
POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end.
MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/°C. The
COE of the mounting surface system should be selected to provide a suitable match with this device.
TAPE & REEL option: Standard per EIA-481-B with 12 mm tape (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: 0.04 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
Applicable to: JAN, JANTX, JANTXV and JANS 1N821, 1N823, 1N825, 1N827, and 1N829 only:
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
1N821
UR
-1
Metallurgical Bond
Surface Mount Package
JEDEC type number
(see
Electrical Characteristics
table)
Applicable to: commercial 1N821, 1N823, 1N825, 1N827, and 1N829 only:
1N821 A UR -1 -1% (e3)
JEDEC type number
(see
Electrical Characteristics
table)
Zener Impedance
A = 10 ohms
Blank = 15 ohms
Surface Mount Package
Metallurgical Bond
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter voltage tolerance
1%
2%
3%
Continued on next page.
T4-LDS-0220-1, Rev. 1 (111514)
©2011 Microsemi Corporation
Page 2 of 6
1N821UR-1 thru 1N829AUR-1
Applicable to: 1N822 and 1N824 only:
1N822
JEDEC type number
(see
Electrical Characteristics
table)
Surface Mount Package
Metallurgical Bond
UR
-1
-1% (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter voltage tolerance
1%
2%
3%
Applicable to: 1N826 and 1N828 only:
1N826
JEDEC type number
(see
Electrical Characteristics
table)
Surface Mount Package
Metallurgical Bond
UR
-1
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
I
R
I
Z
, I
ZT
, I
ZK
V
Z
Z
ZT
or Z
ZK
SYMBOLS & DEFINITIONS
Definition
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Regulator Current: The dc regulator current (I
Z
), at a specified test point (I
ZT
), near breakdown knee (I
ZK
).
Zener Voltage: The zener voltage the device will exhibit at a specified current (I
Z
) in its breakdown region.
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of I
ZT
or I
ZK
) and superimposed on I
ZT
or I
ZK
respectively.
T4-LDS-0220-1, Rev. 1 (111514)
©2011 Microsemi Corporation
Page 3 of 6
1N821UR-1 thru 1N829AUR-1
ELECTRICAL CHARACTERISTICS @ 25
o
C (unless otherwise specified)
ZENER
VOLTAGE
V
Z
@ I
ZT
(Note 1 and 4)
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
ZENER
IMPEDANCE
Z
ZT
@ I
ZT
(Note 2)
Ohms
15
10
15
15
10
15
15
10
15
15
10
15
15
10
MAXIMUM
REVERSE
CURRENT
I
R
@ 3 V
VOLTAGE
TEMPERATURE
STABILITY
(∆V
ZT
MAX)
o
o
-55 C to +100 C
(Note 3 and 4)
mV
96
96
96
48
48
48
19
19
20
9
9
10
5
5
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
JEDEC
TYPE
NUMBER
(Notes
1 & 5)
Volts
1N821UR
1N821AUR
1N822UR†
1N823UR
1N823AUR
1N824UR†
1N825UR
1N825AUR
1N826UR
1N827UR
1N827AUR
1N828UR
1N829UR
1N829AUR
5.89-6.51
5.89-6.51
5.9-6.5
5.89-6.51
5.89-6.51
5.9-6.5
5.89-6.51
5.89-6.51
6.2-6.9
5.89-6.51
5.89-6.51
6.2-6.9
5.89-6.51
5.89-6.51
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
µA
2
2
2
2
2
2
2
2
2
2
2
2
2
2
%/ C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
o
† Double Anode: Electrical specifications apply under both bias polarities.
NOTES:
1.
Add a “-1” suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the V
Z
voltage nominal of 6.2 V, add a further hyphened suffix number % to the part number for desired tolerance, e.g. 1N827UR-1-
2%, 1N829UR-1-1%, 1N829AUR-1-1%, etc.
o
Zener impedance is measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25 C.
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the established limits.
Voltage measurements to be performed 15 seconds after application of dc current.
1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, and 1N829UR-1 also have qualification to MIL-PRF-19500/159 by adding
the JAN, JANTX, or JANTXV prefix to part numbers as well as the “-1” suffix.
2.
3.
4.
5.
T4-LDS-0220-1, Rev. 1 (111514)
©2011 Microsemi Corporation
Page 4 of 6
1N821UR-1 thru 1N829AUR-1
GRAPHS
P
D
, Rated Power
Dissipation (mW)
600
500
400
300
200
100
0
25
50
100
150
175
T
EC
, End Cap temperature (
o
C)
FIGURE 1
POWER DERATING CURVE
Change in temperature coefficient (%/
o
C)
Change in temperature coefficient (mV/
o
C)
Zener Impedance I
ZT
(Ohms)
Operating Current I
ZT
(mA)
FIGURE 2
TYPICAL ZENER IMPEDANCE
VS.
OPERATING CURRENT
∆V
Z
– Change in Zener Voltage (mV)
I
Z
– Operating Current (mA)
FIGURE 3
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT
The curve shown in Figure 3 is typical of the diode series and greatly simplifies the
estimation of the Temperature Coefficient (TC) when the diode is operated at currents
other than 7.5 mA.
EXAMPLE: A diode in this series is operated at a current of 7.5 mA and has specified
Temperature Coefficient (TC) limits of +/-0.005 %/
o
C. To obtain the typical Temperature
Coefficient limits for this same diode operated at a current of 6.0 mA, the new TC limits
(%/
o
C) can be estimated using the graph in FIGURE 3. At a test current of 6.0 mA the
change in Temperature Coefficient (TC) is approximately –0.0006 %/
o
C. The algebraic
sum of +/-0.005 %
o
C and –0.0006 %/
o
C gives the new estimated limits of +0.0044 %/
o
C
and -0.0056 %/
o
C.
I
Z
– Operating Current (mA)
FIGURE 4
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT
This curve in Figure 4 illustrates the change of diode voltage arising from the effect of impedance.
It is in effect an exploded view of the zener operating region of the I-V characteristic.
In conjunction with Figure 3, this curve can be used to estimate total voltage regulation under
conditions of both varying temperature and current.
T4-LDS-0220-1, Rev. 1 (111514)
©2011 Microsemi Corporation
Page 5 of 6
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