Standard SRAM, 32KX8, 25ns, CMOS, DIE
参数名称 | 属性值 |
厂商名称 | Honeywell |
包装说明 | DIE, |
Reach Compliance Code | unknown |
ECCN代码 | 3A001.A.2.C |
最长访问时间 | 25 ns |
JESD-30 代码 | X-XUUC-N |
内存密度 | 262144 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 8 |
功能数量 | 1 |
字数 | 32768 words |
字数代码 | 32000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 32KX8 |
封装主体材料 | UNSPECIFIED |
封装代码 | DIE |
封装形状 | UNSPECIFIED |
封装形式 | UNCASED CHIP |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子形式 | NO LEAD |
端子位置 | UPPER |
Base Number Matches | 1 |
HX6256KEFC | HX6256KEHT | HX6256NEHC | HX6256PEFT | HX6256XEFC | HX6256KERC | |
---|---|---|---|---|---|---|
描述 | Standard SRAM, 32KX8, 25ns, CMOS, DIE | Standard SRAM, 32KX8, 25ns, CMOS, DIE | Standard SRAM, 32KX8, 25ns, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, FP-28 | Standard SRAM, 32KX8, 25ns, CMOS, CDFP36, 0.630 X 0.650 INCH, TOP BRAZED, CERAMIC, FP-36 | Standard SRAM, 32KX8, 25ns, CMOS, CDFP36, 0.630 X 0.650 INCH, BOTTOM BRAZED, CERAMIC, FP-36 | Standard SRAM, 32KX8, 25ns, CMOS, DIE |
厂商名称 | Honeywell | Honeywell | Honeywell | Honeywell | Honeywell | Honeywell |
包装说明 | DIE, | DIE, | DFP, | DFP, | DFP, | DIE, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
最长访问时间 | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns |
JESD-30 代码 | X-XUUC-N | R-XUUC-N28 | R-CDFP-F28 | R-CDFP-F36 | R-CDFP-F36 | X-XUUC-N |
内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
封装代码 | DIE | DIE | DFP | DFP | DFP | DIE |
封装形状 | UNSPECIFIED | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | UNSPECIFIED |
封装形式 | UNCASED CHIP | UNCASED CHIP | FLATPACK | FLATPACK | FLATPACK | UNCASED CHIP |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | NO LEAD | NO LEAD | FLAT | FLAT | FLAT | NO LEAD |
端子位置 | UPPER | UPPER | DUAL | DUAL | DUAL | UPPER |
端子数量 | - | 28 | 28 | 36 | 36 | - |
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