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IS64WV25616BLL-10CTLA3-TR: 产品描述Standard SRAM, 256KX16, 10ns, CMOS, PDSO44; 产品类别存储存储; 文件大小207KB，共21页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS64WV25616BLL-10CTLA3-TR概述

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44

IS64WV25616BLL-10CTLA3-TR规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
包装说明	TSOP, TSOP44,.46,32
Reach Compliance Code	compliant
Factory Lead Time	12 weeks
最长访问时间	10 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G44
内存密度	4194304 bit
内存集成电路类型	STANDARD SRAM
内存宽度	16
端子数量	44
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-40 °C
组织	256KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP
封装等效代码	TSOP44,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
电源	2.5/3.3 V
认证状态	Not Qualified
筛选级别	AEC-Q100
最大待机电流	0.015 A
最小待机电流	2 V
最大压摆率	0.065 mA
表面贴装	YES
技术	CMOS
温度等级	AUTOMOTIVE
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
Base Number Matches	1

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IS61WV25616ALL/ALS

IS61WV25616BLL/BLS

IS64WV25616BLL/BLS

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

JULY 2010

FEATURES

HIGH SPEED: (IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical)

CMOS standby

LOW POWER: (IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

• Low Standby Power: 0.6 mW (typical)

CMOS standby

• Single power supply

— V

1.65V to 2.2V (IS61WV25616Axx)

— V

2.4V to 3.6V (IS61/64WV25616Bxx)

• Fully static operation: no clock or refresh required

•

Three state outputs

Data control for upper and lower bytes

Industrial and Automotive temperature support

Lead-free available

DESCRIPTION

The

ISSI

IS61WV25616Axx/Bxx and IS64WV25616Bxx

are high-speed, 4,194,304-bit static RAMs organized as

262,144 words by 16 bits. It is fabricated using

ISSI

's high-

performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de-

vices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

and

OE.

The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

The IS61WV25616Axx/Bxx and IS64WV25616Bxx are

packaged in the JEDEC standard 44-pin TSOP Type II and

48-pin Mini BGA (6mm x 8mm).

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K x 16

MEMORY ARRAY

VDD

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. G

07/15/2010

IS64WV25616BLL-10CTLA3-TR相似产品对比

	IS64WV25616BLL-10CTLA3-TR	IS61WV25616BLL-10BLI	IS61WV25616BLL-10TLI-TR	IS61WV25616BLL-10TLI	IS61WV25616BLL-10TL-TR	IS61WV25616BLL-10BLI-TR	IS61WV25616BLL-10TL
描述	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44	Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Standard SRAM, 256KX16, 10ns, CMOS, PBGA48	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合
Reach Compliance Code	compliant	compli	compli	compli	compliant	compliant	compliant
Factory Lead Time	12 weeks	8 weeks	8 weeks	8 weeks	8 weeks	8 weeks	8 weeks
最长访问时间	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G44	R-PBGA-B48	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PBGA-B48	R-PDSO-G44
内存密度	4194304 bit	4194304 bi	4194304 bi	4194304 bi	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	16	16	16	16	16	16	16
端子数量	44	48	44	44	44	48	44
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	85 °C	85 °C	85 °C	70 °C	85 °C	70 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-	-40 °C	-
组织	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP	TFBGA	TSOP2	TSOP2	TSOP2	FBGA	TSOP2
封装等效代码	TSOP44,.46,32	BGA48,6X8,30	TSOP44,.46,32	TSOP44,.46,32	TSOP44,.46,32	BGA48,6X8,30	TSOP44,.46,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, FINE PITCH	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.015 A	0.009 A	0.009 A	0.009 A	0.008 A	0.009 A	0.008 A
最小待机电流	2 V	2 V	2 V	2 V	2 V	2 V	2 V
最大压摆率	0.065 mA	0.045 mA	0.045 mA	0.045 mA	0.04 mA	0.045 mA	0.04 mA
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	AUTOMOTIVE	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子形式	GULL WING	BALL	GULL WING	GULL WING	GULL WING	BALL	GULL WING
端子节距	0.8 mm	0.75 mm	0.8 mm	0.8 mm	0.8 mm	0.75 mm	0.8 mm
端子位置	DUAL	BOTTOM	DUAL	DUAL	DUAL	BOTTOM	DUAL
Base Number Matches	1	1	1	1	1	1	1
厂商名称	Integrated Silicon Solution ( ISSI )	-	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
包装说明	TSOP, TSOP44,.46,32	TFBGA, BGA48,6X8,30	TSOP2, TSOP44,.46,32	TSOP2, TSOP44,.46,32	TSOP2, TSOP44,.46,32	-	TSOP2, TSOP44,.46,32
是否无铅	-	不含铅	不含铅	不含铅	不含铅	-	不含铅
零件包装代码	-	BGA	TSOP2	TSOP2	TSOP2	-	TSOP2
针数	-	48	44	44	44	-	44
ECCN代码	-	3A991	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	-	3A991.B.2.A
JESD-609代码	-	e1	e3	e3	e3	-	e3
长度	-	8 mm	18.41 mm	18.415 mm	18.41 mm	-	18.415 mm
湿度敏感等级	-	3	3	3	3	-	3
功能数量	-	1	1	1	1	-	1
峰值回流温度（摄氏度）	-	260	260	260	260	-	260
座面最大高度	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-	1.2 mm
最大供电电压 (Vsup)	-	3.6 V	3.6 V	3.6 V	3.6 V	-	3.6 V
最小供电电压 (Vsup)	-	2.4 V	2.4 V	2.4 V	2.4 V	-	2.4 V
标称供电电压 (Vsup)	-	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V
端子面层	-	Tin/Silver/Copper (Sn/Ag/Cu)	MATTE TIN	Matte Tin (Sn) - annealed	MATTE TIN	-	Matte Tin (Sn) - annealed
处于峰值回流温度下的最长时间	-	40	40	40	40	-	40
宽度	-	6 mm	10.16 mm	10.16 mm	10.16 mm	-	10.16 mm

IS64WV25616BLL-10CTLA3-TR

IS64WV25616BLL-10CTLA3-TR在线购买

IS64WV25616BLL-10CTLA3-TR概述

IS64WV25616BLL-10CTLA3-TR规格参数

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IS64WV25616BLL-10CTLA3-TR相似产品对比

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