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FM24CL64-STR

产品描述Memory Circuit, 8KX8, CMOS, PDSO8, MS-012AA, SOIC-8
产品类别存储    存储   
文件大小289KB,共13页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
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FM24CL64-STR概述

Memory Circuit, 8KX8, CMOS, PDSO8, MS-012AA, SOIC-8

FM24CL64-STR规格参数

参数名称属性值
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码SOIC
包装说明SOP,
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度65536 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数8192 words
字数代码8000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压 (Vsup)3.65 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度3.9 mm
Base Number Matches1

文档预览

下载PDF文档
FM24CL64
64Kb Serial 3V F-RAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
Organized as 8,192 x 8 bits
Unlimited Read/Write Cycles
45 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 1 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Low Power Operation
True 2.7V-3.6V Operation
75
µA
Active Current (100 kHz)
1
µA
Standby Current
Industry Standard Configuration
Industrial Temperature -40° C to +85° C
8-pin “Green”/RoHS SOIC and TDFN Packages
Grade 3 AEC-Q100 Qualified (SOIC only)
Description
The FM24CL64 is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24CL64 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance orders of magnitude higher than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24CL64 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
D
E
D S
N N
E G
M SI
4B
M E
L6
O D
4C
C
2
E W
FM
R E
ve:
T N
ati
O R
ern
N O
Alt
F
Pin Configuration
A0
A1
A2
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
VSS
Top View
1
2
3
4
8
7
6
5
A0
A1
A2
VSS
VDD
WP
SCL
SDA
Pin Names
A0-A2
SDA
SCL
WP
VSS
VDD
Function
Device Select Address
Serial Data/address
Serial Clock
Write Protect
Ground
Supply Voltage
Ordering Information
FM24CL64-G
FM24CL64-GTR
The FM24CL64 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The FM24CL64 is
available in industry standard 8-pin SOIC and DFN
packages using a familiar two-wire protocol. It is
guaranteed over an industrial temperature range of
-40°C to +85°C.
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
FM24CL64-DG
“Green”/RoHS 8-pin DFN
FM24CL64-DGTR “Green”/RoHS 8-pin DFN,
Tape & Reel
FM24CL64-S *
8-pin SOIC
FM24CL64-STR * 8-pin SOIC, Tape & Reel
† Grade 3 AEC-Q100 Qualified
* End of life. Last time buy June 2009.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 3.4
Feb. 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Page 1 of 13

FM24CL64-STR相似产品对比

FM24CL64-STR FM24CL64-GTR FM24CL64-DGTR
描述 Memory Circuit, 8KX8, CMOS, PDSO8, MS-012AA, SOIC-8 Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8 Memory Circuit, 8KX8, CMOS, PDSO8, 4 X 4.5 MM, 0.95 MM PITCH, GREEN, TDFN-8
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码 SOIC SOIC DFN
包装说明 SOP, SOP, HVSON,
针数 8 8 8
Reach Compliance Code unknown unknown unknown
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-N8
长度 4.9 mm 4.9 mm 4.5 mm
内存密度 65536 bit 65536 bit 65536 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8 8
功能数量 1 1 1
端子数量 8 8 8
字数 8192 words 8192 words 8192 words
字数代码 8000 8000 8000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
组织 8KX8 8KX8 8KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP HVSON
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm 0.8 mm
最大供电电压 (Vsup) 3.65 V 3.65 V 3.65 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V 3 V 3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING NO LEAD
端子节距 1.27 mm 1.27 mm 0.95 mm
端子位置 DUAL DUAL DUAL
宽度 3.9 mm 3.9 mm 4 mm
Base Number Matches 1 1 1

 
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