HL6339G
633nm Lasing Laser Diode
ADE-208-1434 (Z)
Preliminary
Rev.0
Jun. 2001
Description
The HL6339G is 0.63
µm
band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing
wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light
sources for laser levelers, laser scanners and optical equipment for measurement.
Application
•
Laser analysis systems
•
Laser scanner
•
Measurement
Features
•
Visible light output
•
Optical output power
•
Operating current
•
TM mode oscillation
Package Type
•
HL6339G: G2
Internal Circuit
1
3
: 633 nm Typ (nearly equal to He-Ne gas laser)
: 5 mW CW
: 55 mA Typ
PD
LD
2
HL6339G
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Value
5
2
30
0 to +40
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Optical output power
Threshold current
Operating current
Operating voltage
Slope efficiency
Lasing wavelength
Beam divergence
parallel to the junction
Beam divergence
parpendicular to the junction
Monitor current
Symbol
P
O
Ith
I
OP
V
OP
ηs
λp
θ//
θ⊥
I
S
Min
5
—
—
—
0.40
—
—
—
—
Typ
—
45
55
2.3
0.65
633
8
30
0.05
Max
—
60
70
2.7
0.90
635
—
—
—
Unit
mW
mA
mA
V
mW/mA
nm
deg.
deg.
mA
P
O
= 5 mW
P
O
= 5 mW
3 (mW) / (I
(4mW)
– I
(1mW)
)
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW, V
R(PD)
= 5 V
Test Condition
Kink free
Rev.0, Jun. 2001, page 2 of 5
HL6339G
Package Dimensions
As of January, 2001
Unit: mm
φ
9.0
+0
–0.025
1.0 ± 0.1
(0.65)
(90˚)
3.5 ± 0.2
0.3
Glass
φ
7.2
+0.3
–0.2
φ
6.2 ± 0.2
(
φ
2.0)
Emitting Point
0.4
+0.1
–0
3 –
φ
0.45 ± 0.1
1
2
3
1
3
2
φ
2.54 ± 0.35
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
1.5 ± 0.1
9±1
2.45
LD/G2
—
—
1.1 g
Rev.0, Jun. 2001, page 3 of 5
HL6339G
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
Rev.0, Jun. 2001, page 4 of 5
HL6339G
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.0, Jun. 2001, page 5 of 5
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