HCS112MS
September 1995
Radiation Hardened
Dual JK Flip-Flop
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
CP1 1
KA 2
JA 3
SA 4
QA 5
16 VCC
15 RA
14 RB
13 CPB
12 KB
11 JB
10 SB
9 QB
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C
QA 6
to
+125
o
C
QB 7
GND 8
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
CP1
KA
JA
SA
QA
QA
QB
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
RA
RB
CPB
KB
JB
SB
QB
Description
The Intersil HCS112MS is a Radiation Hardened dual JK
flip-flop with set and reset. The output changes state on the
negative going transition of the clock pulse. Set and reset
are accomplished asynchronously by a logic low input level.
The HCS112MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS112MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCS112DMSR
HCS112KMSR
HCS112D/Sample
HCS112K/Sample
HCS112HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
11
518830
3558.1
DB NA
HCS112MS
Functional Diagram
5 (9)
CL
Q
P
3(11)
J
CL
P
N
2(12)
K
4(10)
S
15(14)
R
1(13)
CL
CP
CL
CL
N
CL
CL
P
N
CL
CL
P
N
CL
6 (7)
Q
TRUTH TABLE
INPUTS
S
L
H
L
H
H
H
H
H
R
H
L
L
H
H
H
H
H
H
CP
X
X
X
J
X
X
X
L
H
L
H
X
K
X
X
X
L
L
H
H
X
H
L
Toggle
No Change
Q
H
L
H*
No Change
L
H
OUTPUTS
Q
L
H
H*
H = High Steady State, L = Low Steady State, X = Immaterial,
= High-to-Low Transition
* Output States Unpredictable if S and R Go High Simultaneously after Both being Low at the Same Time
Spec Number
12
518830
Specifications HCS112MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
o
C/W
29
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V, (Note 2)
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
20
400
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Supply Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Source)
IOH
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
-
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V (Note 3)
7, 8A, 8B
1. All voltages referenced to device GND.
2. Force/Measure Functions may be interchanged.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
13
518830
Specifications HCS112MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
PROPAGATION DELAY
CP to Q, Q
TPHL,
TPLH
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
2
2
2
2
2
2
2
2
2
2
28
35
27
33
27
33
26
32
26
32
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S to Q
S to Q
TPLH
R to Q
TPHL
R to Q
TPLH
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
VCC =5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
VCC = 4.5V , VIH = 4.5V,
VIL = 0.0V,
NOTES
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
16
24
16
24
0
0
16
24
30
20
1
1
MAX
15
45
10
10
10
10
-
-
-
-
-
-
-
-
-
-
15
22
UNITS
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MHz
MHz
ns
ns
CIN
Output Capacitance
COUT
Pulse Width Time
CP, R, S
Setup Time J, K to
CP
Hold Time J, K to CP
TW
TSU
TH
Removal Time
S to CP, R to CP
Max Operating
Frequency
Output Transition
Time
NOTE:
TREM
FMAX
TTHL,
TTLH
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
14
518830
Specifications HCS112MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K LIMITS
RAD
PARAMETER
Supply Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = VIH = 4.5V, VIL = 0.0V,
VOUT = 0.4V
VCC = VIH = 4.5V, VIL = 0.0V,
VOUT = VCC -0.4V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL =1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,
VIL =1.35V, IOH = -50µA
Input Leakage Current
Noise Immunity
Functional Test
PROPAGATION DELAY
CP to Q, Q
TPHL,
TPLH
TPLH
TPHL
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
35
ns
IIN
FN
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH =3.15V, VIL = 1.35V,
(Note 3)
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
4.0
MAX
0.4
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
+25
o
C
-4.0
-
mA
VOL
+25
o
C
-
0.1
V
+25
o
C
-
0.1
V
+25
o
C
VCC
-0.1
VCC
-0.1
-
V
+25
o
C
-
V
+25
o
C
+25
o
C
-
±5
-
µA
-
S to Q
S to Q
R to Q
R to Q
NOTES:
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
+25
o
C
+25
o
C
+25
o
C
+25
o
C
2
2
2
2
33
33
32
32
ns
ns
ns
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
6µA
-15% of 0 Hour
Spec Number
15
518830
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