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BZG04-10/TR3

产品描述DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Transient Suppressor
产品类别分立半导体    二极管   
文件大小78KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

BZG04-10/TR3概述

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Transient Suppressor

BZG04-10/TR3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码DO-214AC
包装说明R-PDSO-C2
针数2
Reach Compliance Codeunknown
其他特性HIGH RELIABILITY
最小击穿电压11.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散300 W
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散1.25 W
认证状态Not Qualified
最大重复峰值反向电压10 V
表面贴装YES
技术ZENER
端子面层MATTE TIN
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
Base Number Matches1

文档预览

下载PDF文档
BZG04-Series
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• High reliability
• Stand-off voltage range 8.2 V to 220 V
• Excellent clamping cabability
• Fast response time (typ. £ 1 ps from 0 to V
Zmin.
)
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
10 to 270
2 to 50
Pulse current
Single
UNIT
V
mA
• Protection from high voltage, high energy transients
ORDERING INFORMATION
DEVICE NAME
BZG04-series
BZG04-series
ORDERING CODE
BZG04-series-TR3
BZG04-series-TR
TAPED UNITS PER REEL
6000 per 13" reel
1500 per 7" reel
MINIMUM ORDER QUANTITY
6000/box
PACKAGE
PACKAGE NAME
DO-214AC
WEIGHT
77 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power
dissipation
Peak forward surge current
Junction to lead
Mounted on epoxy-glass hard tissue,fig. 1b
Junction to ambient air
Mounted on epoxy-glass hard tissue, fig. 1b
Mounted on Al-oxid-ceramic (Al
2
O
3
), fig. 1b
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 0.5 A
TEST CONDITION
R
thJA
< 25 K/W, T
amb
= 100 °C
R
thJA
< 100 K/W, T
amb
= 50 °C
t
p
= 10/1000 μs sq.pulse,
T
j
= 25 °C prior to surge
10 ms single half sine wave
SYMBOL
P
tot
P
tot
P
ZSM
I
FSM
R
thJL
R
thJA
R
thJA
R
thJA
T
j
T
stg
V
F
VALUE
3000
1250
300
50
25
150
125
100
150
- 65 to + 150
1.2
UNIT
mW
mW
W
A
K/W
K/W
K/W
K/W
°C
°C
V
Rev. 2.4, 29-Nov-11
Document Number: 85594
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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