Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V
Voltage on HB. . . V
HS
+8V to V
HS
+16.5V and V
DD
-1V to V
DD
+100V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
2. All Voltages Relative to Pin 4, V
SS
Unless Otherwise Specified.
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
T
J
= 25
o
C
PARAMETER
SUPPLY CURRENTS
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V
SS
Current, Quiescent
HB to V
SS
Current, Operating
INPUT PINS
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Voltage Hysteresis
Input Pulldown Resistance
UNDER VOLTAGE PROTECTION
V
DD
Rising Threshold
V
DD
Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
BOOT STRAP DIODE
Low-Current Forward Voltage
High-Current Forward Voltage
Dynamic Resistance
LO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
HO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
V
OLH
V
OHH
I
OHH
I
HO
= 100mA
I
HO
= -100mA, V
OHH
= V
HB
-V
HO
V
HO
= 0V
-
-
-
0.25
0.25
1
0.3
0.3
-
-
-
-
0.4
0.4
-
V
V
A
V
OLL
V
OHL
I
OHL
I
OLL
I
LO
= 100mA
I
LO
= -100mA, V
OHL
= V
DD
-V
LO
V
LO
= 0V
V
LO
= 12V
-
-
-
-
0.25
0.25
1
1
0.3
0.3
-
-
-
-
-
-
0.4
0.4
-
-
V
V
A
A
V
DL
V
DH
R
D
I
VDD-HB
= 100µA
I
VDD-HB
= 100mA
I
VDD-HB
= 100mA
-
-
-
0.45
0.7
0.8
0.55
0.8
1
-
-
-
0.7
1
1.5
V
V
Ω
V
DDR
V
DDH
V
HBR
V
HBH
7
-
6.5
-
7.3
0.5
6.9
0.4
8
-
7.5
-
6.5
-
6
-
8.5
-
8
-
V
V
V
V
V
IL
V
IH
V
IHYS
R
I
4
-
-
-
5.4
5.8
0.4
200
-
8
-
-
3
-
-
100
-
9
-
500
V
V
V
kΩ
I
DD
I
DDO
I
HB
I
HBO
I
HBS
I
HBSO
LI = HI = 0V
f = 500kHz
LI = HI = 0V
f = 500kHz
V
HS
= V
HB
= 116.5V
f = 500kHz
-
-
-
-
-
-
0.1
1.5
0.1
1.5
0.05
0.7
0.15
2.5
0.15
2.5
1
-
-
-
-
-
-
-
0.2
3
0.2
3
10
-
mA
mA
mA
mA
µA
mA
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
T
J
= -40
o
C
TO 125
o
C
MIN
MAX
UNITS
3
HIP2106
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
(Continued)
T
J
= 25
o
C
PARAMETER
Peak Pulldown Current
SYMBOL
I
OLH
TEST CONDITIONS
V
HO
= 12V
MIN
-
TYP
1
MAX
-
T
J
= -40
o
C
TO 125
o
C
MIN
-
MAX
-
UNITS
A
Switching Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
T
J
= 25
o
C
MIN
-
-
-
-
-
-
C
L
= 1000pF
C
L
= 0.1µF
C
L
= IRFR120
C
L
= IRFR120
-
-
-
-
-
-
TYP
40
40
40
40
4
4
20
1.0
40
20
-
20
MAX
70
70
70
70
16
16
-
1.2
-
-
-
-
T
J
= - 40
o
C
TO 125
o
C
MIN
-
-
-
-
-
-
-
-
-
-
-
-
MAX
90
90
90
90
20
20
-
1.6
-
-
100
-
UNITS
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
PARAMETER
Lower Turn-Off Propagation Delay (LI Falling to LO Falling)
Upper Turn-Off Propagation Delay (HI Falling to HO Falling)
Lower Turn-On Propagation Delay (LI Rising to LO Rising)
Upper Turn-On Propagation Delay (HI Rising to HO Rising)
Delay Matching: Lower Turn-On and Upper Turn-Off
Delay Matching: Lower Turn-Off and Upper Turn-On
Either Output Rise/Fall Time
Either Output Rise/Fall Time (3V to 9V)
Either Output Rise Time Driving DMOS
Either Output Fall Time Driving DMOS
Minimum Input Pulse Width that Changes the Output
Bootstrap Diode Turn-On or Turn-Off Time
SYMBOL
t
LPHL
t
HPHL
t
LPLH
t
HPLH
t
MON
t
MOFF
t
RC
, t
FC
t
R
, t
F
t
RD
t
FD
t
PW
t
BS
TEST
CONDITIONS
Pin Descriptions
PIN
NUMBER
1
2
3
4
5
6
7
8
SYMBOL
V
DD
HB
HO
HS
HI
LI
V
SS
LO
DESCRIPTION
Positive Supply to lower gate drivers. De-couple this pin to V
SS
(Pin 7). Bootstrap diode connected to HB (pin 2).
High-Side Bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to
this pin. Bootstrap diode is on-chip.
High-Side Output. Connect to gate of High-Side power MOSFET.
High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap
capacitor to this pin.
High-Side input.
Low-Side input.
Chip negative supply, generally will be ground.
Low-Side Output. Connect to gate of Low-Side power MOSFET.
Timing Diagrams
LI
HI,
LI
t
HPLH
,
t
LPLH
HO,
LO
t
HPHL
,
t
LPHL
HI
LO
t
MON
HO
t
MOFF
FIGURE 3.
FIGURE 4.
4
HIP2106
Typical Performance Curves
10
10
I
DDO
, I
HBO
(mA)
I
HBSO
(mA)
1
1
T = 150
o
C
0.1
T = -40
o
C
0.1
T = 150
o
C
T = 125
o
C
T = 25
o
C
T = -40
o
C
0.01
10
0.01
50
100
FREQUENCY (kHz)
500
10
T = 125
o
C
T = 25
o
C
100
FREQUENCY (kHz)
1000
FIGURE 5. OPERATING CURRENT vs FREQUENCY
FIGURE 6. LEVEL SHIFTER CURRENT vs FREQUENCY
500
500
V
HB
= V
DD
= 9V
400
V
OHL
, V
OHH
(mV)
V
HB
= V
DD
= 12V
V
HB
= V
DD
= 16.5V
300
V
OLL
, V
OLH
(mV)
V
HB
= V
DD
= 14V
400
V
HB
= V
DD
= 9V
V
HB
= V
DD
= 12V
V
HB
= V
DD
= 14V
V
HB
= V
DD
= 16.5V
300
200
200
100
-50
0
50
TEMPERATURE (
o
C)
100
150
100
-50
0
50
TEMPERATURE (
o
C)
100
150
FIGURE 7. HIGH LEVEL OUTPUT VOLTAGE vs TEMPERATURE
嵌入式系统
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