Speech Synthesizer With RCDG, 20s, CMOS, PDIP28
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Nuvoton(新唐科技) |
| 包装说明 | DIP, DIP28,.6 |
| Reach Compliance Code | unknown |
| 商用集成电路类型 | SPEECH SYNTHESIZER WITH RCDG |
| JESD-30 代码 | R-PDIP-T28 |
| JESD-609代码 | e0 |
| 端子数量 | 28 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最长读取时间 | 20 s |
| 最大压摆率 | 30 mA |
| 表面贴装 | NO |
| 技术 | CMOS |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
| ISD1020AP | ISD1020AG | ISD1020AX | ISD1016AP | ISD1012AG | ISD1012AJ | ISD1012AP | ISD1012AX | ISD1016AJ | ISD1020AJ | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Speech Synthesizer With RCDG, 20s, CMOS, PDIP28 | Speech Synthesizer With RCDG, 20s, CMOS, PDSO28 | Speech Synthesizer With RCDG, 20s, CMOS | Speech Synthesizer With RCDG, 16s, CMOS, PDIP28 | Speech Synthesizer With RCDG, 12s, CMOS, PDSO28, | Speech Synthesizer With RCDG, 12s, CMOS, PQCC28, | Speech Synthesizer With RCDG, 12s, CMOS, PDIP28, | Speech Synthesizer With RCDG, 12s, CMOS, | Speech Synthesizer With RCDG, 16s, CMOS, PQCC28, | Speech Synthesizer With RCDG, 20s, CMOS, PQCC28, |
| 厂商名称 | Nuvoton(新唐科技) | Nuvoton(新唐科技) | Nuvoton(新唐科技) | Nuvoton(新唐科技) | Nuvoton(新唐科技) | Nuvoton(新唐科技) | Nuvoton(新唐科技) | Nuvoton(新唐科技) | Nuvoton(新唐科技) | Nuvoton(新唐科技) |
| 包装说明 | DIP, DIP28,.6 | SOP, SOP28,.5 | , DIE OR CHIP | DIP, DIP28,.6 | SOP, SOP28,.5 | QCCJ, LDCC28,.5SQ | DIP, DIP28,.6 | , DIE OR CHIP | QCCJ, LDCC28,.5SQ | QCCJ, LDCC28,.5SQ |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 商用集成电路类型 | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG | SPEECH SYNTHESIZER WITH RCDG |
| 封装等效代码 | DIP28,.6 | SOP28,.5 | DIE OR CHIP | DIP28,.6 | SOP28,.5 | LDCC28,.5SQ | DIP28,.6 | DIE OR CHIP | LDCC28,.5SQ | LDCC28,.5SQ |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最长读取时间 | 20 s | 20 s | 20 s | 16 s | 12 s | 12 s | 12 s | 12 s | 16 s | 20 s |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 是否Rohs认证 | 不符合 | 不符合 | - | 不符合 | 不符合 | 不符合 | 不符合 | - | 不符合 | 不符合 |
| JESD-30 代码 | R-PDIP-T28 | R-PDSO-G28 | X-XUUC-N25 | R-PDIP-T28 | R-PDSO-G28 | S-PQCC-J28 | R-PDIP-T28 | - | S-PQCC-J28 | S-PQCC-J28 |
| JESD-609代码 | e0 | e0 | - | e0 | e0 | e0 | e0 | - | e0 | e0 |
| 端子数量 | 28 | 28 | 25 | 28 | 28 | 28 | 28 | - | 28 | 28 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | SOP | - | DIP | SOP | QCCJ | DIP | - | QCCJ | QCCJ |
| 封装形状 | RECTANGULAR | RECTANGULAR | UNSPECIFIED | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | - | SQUARE | SQUARE |
| 封装形式 | IN-LINE | SMALL OUTLINE | UNCASED CHIP | IN-LINE | SMALL OUTLINE | CHIP CARRIER | IN-LINE | - | CHIP CARRIER | CHIP CARRIER |
| 最大压摆率 | 30 mA | 30 mA | - | 30 mA | 25 mA | 25 mA | 25 mA | - | 30 mA | 30 mA |
| 表面贴装 | NO | YES | YES | NO | YES | YES | NO | - | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | GULL WING | NO LEAD | THROUGH-HOLE | GULL WING | J BEND | THROUGH-HOLE | - | J BEND | J BEND |
| 端子节距 | 2.54 mm | 1.27 mm | - | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | - | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | UPPER | DUAL | DUAL | QUAD | DUAL | - | QUAD | QUAD |
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