PHEMT* Low Noise Amplifier
with Bypass Switch
Technical Data
MGA-72543
Features
• Lead-free Option Available
• Operating Frequency
0.1 GHz ~ 6.0 GHz
• Noise Figure:
1.4 dB at 2 GHz
• Gain: 14 dB at 2 GHz
• Bypass Switch on Chip
Loss = -2.5 dB (I
d
< 5
µA)
IIP
3
= +35 dBm
• Adjustable Input IP
3
+2 to +14 dBm
• 2.7 V to 4.2 V Operation
• Very Small Surface Mount
Package
Surface Mount Package
SOT-343 (SC-70)
figure into 50Ω. The input may be
additionally externally matched for
low VSWR through the addition of
a single series inductor. When set
into the bypass mode, both input
and output are internally matched
to 50Ω.
The MGA-72543 offers an inte-
grated solution of LNA with
adjustable IIP
3
. The IIP
3
can be
fixed to a desired current level for
the receiver’s linearity require-
ments. The LNA has a bypass
switch function, which sets the
current to zero and provides low
insertion loss. The bypass mode
also boosts dynamic range when
high level signal is being received.
For the CDMA driver amplifier
applications, the MGA-72543
provides suitable gain and linearity
to meet the ACPR requirements
when the handset transmits the
highest power. When transmitting
lower power, the MGA-72543 can
be bypassed, saving the drawing
current.
The MGA-72543 is a GaAs MMIC,
processed on Agilent’s cost effec-
tive PHEMT (Pseudomorphic High
Electron Mobility Transistor). It is
housed in the SOT343 (SC70 4-lead)
package, and is part of the Agilent
Technologies CDMAdvantage RF
chipset.
Pin Connections and
Package Marking
3
INPUT
& V
ref
4
GND
1
Package marking is 3 characters. The
last character represents date code.
72x
GND
2
OUTPUT
& V
d
Applications
• CDMA (IS-95, J-STD-008)
Receiver LNA
Transmit Driver Amp
• TDMA (IS-136) Handsets
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Description
Agilent’s MGA-72543 is an economi-
cal, easy-to-use GaAs MMIC Low
Noise Amplifier (LNA), which is
designed for an adaptive CDMA
receiver LNA and adaptive CDMA
transmit driver amplifier.
The MGA-72543 features a mini-
mum noise figure of 1.4 dB and
14 dB associated gain from a single
stage, feedback FET amplifier. The
output is internally matched to
50Ω. The input is optimally
internally matched for lowest noise
*
Pseudomorphic High
Electron Mobility Transistor
2
MGA-72543 Absolute Maximum Ratings
[1]
Symbol
V
d
V
ref
I
d
P
d
P
in
T
j
T
STG
Parameter
Maximum Input to
Output Voltage
Maximum Input to
Ground DC Voltage
Supply Current
Power Dissipation
[2,3]
CW RF Input Power
Junction Temperature
Storage Temperature
Absolute
Maximum
Units Maximum Recommended
V
V
mA
mW
dBm
°C
°C
5.5
+0.3
-5.5
70
300
+20
170
-65 to +150
4.2
+0.1
-4.2
60
250
+13
150
-40 to +85
Thermal Resistance
[2]
:
θ
jc
= 200°C/W
Notes:
1. Operation of this device in excess of
any one of these limits may cause
permanent damage.
2. T
case
= 25°C
Simplified Schematic
Functional Block Diagram
RF IN
RF OUT
Control
Input
&
V
ref
GainFET
Output
& V
d
SW & Bias Control
GND
GND
3
MGA-72543 Electrical Specifications,
T
C
= +25°C, Z
O
= 50
Ω,
I
d
= 20 mA, V
d
= 3 V, unless noted.
Symbol
Vref test
[1]
NF test
[1]
G
a
test
[1]
IIP
3
test
[1]
IL test
[1]
Ig test
[1]
NF
o
[2]
Parameters and Test Conditions
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
V
d
= 3.0 V (V
ds
= 2.5 V)
V
d
= 3.0 V (=V
ds
+Vc)
V
d
= 3.0 V (=V
ds
+Vc)
V
d
= 3.0 V (V
ds
= 0 V, V
c
= 3 V)
I
d
= 20 mA
I
d
= 20 mA
I
d
= 20 mA
I
d
= 20 mA
I
d
= 0.0 mA
Units
V
dB
dB
dB
dB
uA
dB
13.5
8.5
Min.
0.37
Typ.
0.51
1.5
14.4
10.5
2.5
2.0
1.35
1.38
1.42
1.45
1.54
1.70
14.8
14.2
13.6
13.0
11.2
9.2
+15 .3
+3.2
+8.3
+11.2
+14.9
+17.1
+35
+3.5
+6.2
+10.5
+12.1
+14.8
-55
-60
-57
-60
10.2
19.5
-23.2
0.22
1.1
0.16
3.5
Max.
0.65
1.8
15.5
σ
0.035
0.06
0.13
0.67
0.01
2.0
f = 2.04 GHz V
d
= 3.0 V (=V
ds
+Vc)
G
a
[2]
P
1dB
[1]
f = 2.0 GHz V
d
= 3.0 V (V
ds
= 0 V, V
c
= 3 V) I
d
= 0.0 mA
Minimum Noise Figure
f = 1.0 GHz
As measured in Figure 2 Test Circuit
f = 1.5 GHz
(Γopt computed from s-parameter and
f = 2.0 GHz
noise parameter performance as measured f = 2.5 GHz
in a 50
Ω
impedance fixture)
f = 4.0 GHz
f = 6.0 GHz
Associated Gain at NF
o
f = 1.0 GHz
As measured in Figure 2 Test Circuit
f = 1.5 GHz
(Γopt computed from s-parameter and
f = 2.0 GHz
noise parameter performance as measured f = 2.5 GHz
in a 50
Ω
impedance fixture)
f = 4.0 GHz
f = 6.0 GHz
Output Power at 1 dB Gain Compression
I
d
= 0 mA
As measured in Figure 1 Test Circuit
I
d
= 5 mA
Frequency = 2.04 GHz
I
d
= 10 mA
I
d
= 20 mA
I
d
= 40 mA
I
d
= 60 mA
Input Third Order Intercept Point
As measured in Figure 1 Test Circuit
Frequency = 2.04 GHz
I
d
= 0 mA
I
d
= 5 mA
I
d
= 10 mA
I
d
= 20 mA
I
d
= 40 mA
I
d
= 60 mA
0.04
dB
0.11
dBm
0.52
IIP
3
[1]
dBm
0.67
ACP
Adjacent Channel Power Rejection,
f = 2 GHz, offset = 1.25 MHz, Pout = 10 dBm I
d
= 30 mA
(CDMA modulation scheme)
I
d
= 40 mA
f = 800 MHz, offset = 900 KHz, Pout = 8 dBm I
d
= 20 mA
As measured in Figure 1 Test Circuit
I
d
= 30 mA
Input Return Loss as measured in Fig. 1
Output Return Loss as measured in Fig. 1
Isolation |S
12
|
2
as measured in Fig. 2
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
dBc
RL
in
[1]
RL
out
[1]
ISOL
[1]
dB
dB
dB
Notes:
1. Standard Deviation and Typical Data as measured in the test circuit in Figure 1. Data based at least 500 part sample size
and 3 wafer lots.
2. Typical data computed from s-parameter and noise parameter data measured in a 50Ω system. Data based on 40 parts
from 3 wafer lots.
960 pF
RF
Input
2.7 nH
50 pF
V
ref
1000
Ω
4
V
d
56 pF
RF
Input Bias Tee
ICM Fixture
V
d
72x
72x
3
1
2
18 nH
RF
Output
56 pF
V
ref
Bias
Tee
RF
Output
Figure 1. MGA-72543 Production Test Circuit.
Figure 2. MGA-72543 Test Circuit for S, Noise, and
Power Parameters Over Frequency.
4
MGA-72543 Typical Performance,
T
C
= 25°C, Z
O
= 50, V
d
= 3 V, I
d
= 20 mA, unless stated otherwise.
All data as measured in Figure 2 test circuit (Input & Output presented to 50Ω).
2.2
2
1.8
NF (dB)
G
a
(dB)
18
15
INPUT IP
3
(dBm)
18
15
12
9
6
3
0
-3
2.7V
3.0V
3.3V
0
1
2
3
4
5
6
12
9
6
3
2.7V
3.0V
3.3V
0
1
2
3
4
5
6
0
-3
2.7V
3.0V
3.3V
0
1
2
3
4
5
6
1.6
1.4
1.2
1
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Minimum Noise Figure vs.
Frequency and Voltage.
Figure 4. Associated Gain with F
min
vs. Frequency and Voltage.
Figure 5. Input Third Order Intercept
Point vs. Frequency and Voltage.
2.2
2
1.8
NF (dB)
G
a
(dB)
18
-40°C
+22°C
+85°C
15
INPUT IP
3
(dBm)
18
15
12
9
6
3
0
6
-3
-40°C
+25°C
+85°C
0
1
2
3
4
5
6
12
9
6
3
0
-3
-40°C
+22°C
+85°C
0
1
2
3
4
5
1.6
1.4
1.2
1
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. Minimum Noise Figure vs.
Frequency and Temperature.
Figure 7. Associated Gain with F
min
vs. Frequency and Temperature.
Figure 8. Input Third Order Intercept
Point vs. Frequency and Temperature.
5
In (LNA)
Out (LNA)
VSWR (Bypass Switch)
5
In (Swt)
Out (Swt)
4
INSERTION LOSS (dB)
0
4
VSWR (LNA)
-1
3
3
-2
2
2
-3
-40°C
+25°C
+85°C
-4
0
1
2
3
4
5
6
1
0
1
2
3
4
5
6
FREQUENCY (GHz)
1
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 9. LNA on (Switch off) VSWR
vs. Frequency.
Figure 10. LNA off (Switch on) VSWR
vs. Frequency.
Figure 11. Insertion Loss (Switch on)
vs. Frequency and Temperature.
5
MGA-72543 Typical Performance,
continued, T
C
= 25°C, Z
O
= 50, V
d
= 3 V, I
d
= 20 mA, Frequency =
2 GHz, unless stated otherwise. All data as measured in Figure 2 test circuit (Input & Output presented to 50Ω).
18
18
18
15
1 dB COMPRESSION (dBm)
9
6
3
0
-3
2.7 V
3.0 V
3.3 V
0
1
2
3
4
5
6
9
6
3
0
-3
-40°C
+25°C
+85°C
0
1
2
3
4
5
6
INPUT IP
3
(dBm)
12
1 dB COMPRESSION (dBm)
15
15
12
12
9
6
3
0
-3
10 mA
20 mA
40 mA
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Output Power at 1 dB
Compression vs. Frequency and
Voltage.
Figure 13. Output Power at 1 dB
Compression vs. Frequency and
Temperature.
Figure 14. Input Third Order Intercept
Point vs. Frequency and Current.
2.6
2.4
2.2
-40°C
+25°C
+85°C
18
15
21
18
G
a
(dBm)
NF (dB)
2.0
1.8
1.6
1.4
1.2
1.0
0
20
40
60
80
9
6
3
0
-3
-40°C
+25°C
+85°C
0
20
40
60
80
INPUT IP
3
(dBm)
12
15
12
9
6
3
0
-40°C
+25°C
+85°C
0
20
40
60
80
I
d
CURRENT (mA)
I
d
CURRENT (mA)
I
d
CURRENT (mA)
Figure 15. Minimum Noise Figure vs.
Current and Temperature.
Figure 16. Associated Gain (Fmin)
vs. Current and Temperature.
Figure 17. Input Third Order Intercept
Point vs. Current and Temperature.
18
5
1
1 dB Compression (dBm)
15
12
4
0.8
VSWR
9
6
3
0
-3
-40°C
+25°C
+85°C
3
Gamma
Input
Output
Vref (V)
0.6
0.4
-40°C
+25°C
+85°C
0
20
40
60
80
2
0.2
1
0
20
40
60
80
0
20
40
60
80
I
d
CURRENT (mA)
I
d
CURRENT (mA)
0
I
d
CURRENT (mA)
Figure 18. Output Power at 1 dB
Compression vs. Current and
Temperature.
Figure 19. Input and Output VSWR
and VSWR of |Γ
opt
| vs. Current.
Figure 20. V
ref
vs. Current and
Temperature.
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
