FMA411
X-BAND MMIC
•
PERFORMANCE
♦
8.5 – 14.0 GHz Operating Bandwidth
♦
2.6 dB Noise Figure
♦
18 dB Small-Signal Gain
♦
17.5 dm Output Power
♦
+6V Single Bias Supply
♦
Adjustable Operating Current
♦
DC De-coupled Input and Output Ports
•
DESCRIPTION AND APPLICATIONS
The FMA411 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use
over the 8.5 to 14.0 GHz bandwidth. The amplifier requires a single +6V supply and one off-chip
component for supply de-coupling; the supply voltage can be varied from +3V to +6V if needed.
Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated
thru-vias to the bottom of the die, no additional ground is required. Operating current can be
adjusted using the Source resistor ladders located along the bottom edge, by bonding a particular pad
to ground, in order to optimize noise or power performance.
Typical applications include low-noise front end amplifiers, and general gain block utilizations in X-
band. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally
stable if the input port is open-circuited.
•
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Operating Frequency Bandwidth
Small Signal Gain
Operating Current
Small Signal Gain Flatness
Noise Figure
3
rd
-Order Intermodulation Distortion
Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Equivalent Thermal Resistivity
Symbol
BW
S
21
I
DQ
∆S
21
NF
IMD
P
1dB
S
11
S
22
S
12
Θ
JC
V
DD
= +6 V I
DD
= I
DQ
V
DD
= +6V
V
DD
= +6 V I
DD
= I
DQ
V
DD
= +6 V I
DD
= I
DQ
V
DD
= +6 V I
DD
= I
DQ
P
OUT
= +6 dBm SCL
V
DD
= +6 V I
DD
= I
DQ
V
DD
= +6 V I
DD
= I
DQ
V
DD
= +6 V I
DD
= I
DQ
V
DD
= +6 V I
DD
= I
DQ
V
DD
= +5 - 9 V I
DD
= I
DQ
16
-46
17.5
-10
-16
-40
57
-6
-10
-35
dBc
dBm
dB
dB
dB
ºC/W
Test Conditions
Min
8.5
16.5
95
18
120
±
0.8
2.6
Typ
Max
14
21
165
±
1.2
3.5
Units
GHz
dB
mA
dB
dB
•
NOTE:
Continuous operation at I
DSS
is not recommended
Phone:
+1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
11/03/05
Email:
sales@filcsi.com
FMA411
X-BAND MMIC
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Supply Voltage
Supply Current
RF Input Power
Storage Temperature
Total Power Dissipation
Gain Compression
Simultaneous Combination of Limits
2
1
T
Ambient
= 22°C unless otherwise noted
Symbol
V
DD
I
DD
P
IN
T
STG
P
TOT
Comp.
Test Conditions
For any operating current
For V
DD
< 7V
For standard bias conditions
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
-40
Min
Max
8
200
+4
150
2.2
5
Units
V
mA
dBm
ºC
W
dB
2 or more Max. Limits
80
%
2
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
•
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
•
Total Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where:
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
•
Total Power Dissipation to be de-rated as follows above 22°C:
P
TOT
= 2.2 - (0.0175W/°C) x T
CARRIER
where T
CARRIER
=
carrier or heatsink temperature above 22
°
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65°C carrier temperature: P
TOT
2.2 - (0.0175 x (65 – 22)) = 1.45 W
•
For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with
some degradation in thermal de-rating performance. Typical value given (57ºC/W) is for a conductive epoxy
die attach with a nominal 15 µm adhesive thickness.
•
For detailed junction temperature calculations, users may need the individual resistivities of the two FET
stages, which are (respectively) 114 and 113 ºC/W. Users should contact Applications Support for additional
information required for a detailed calculation.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 0 (< 250V) per JESD22-A114-B, Human Body
Model, and Class A (< 200V) per JESD22-A115-A, Machine Model.
Phone:
+1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
11/03/05
Email:
sales@filcsi.com
FMA411
X-BAND MMIC
•
MECHANICAL OUTLINE:
Notes:
1) All units are in microns, unless otherwise specified.
2) All bond pads are 100x100 µm
2
3) Bias pad (V
DD
) size is 100x100 µm
2
Phone:
+1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
11/03/05
Email:
sales@filcsi.com
FMA411
X-BAND MMIC
•
ASSEMBLY / BONDING DIAGRAM (50% / 75% BIAS SETTING):
Phone:
+1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
11/03/05
Email:
sales@filcsi.com
FMA411
X-BAND MMIC
•
ASSEMBLY / BONDING DIAGRAM (50% / 50% BIAS SETTING):
Notes:
• Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter
wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated
tool (150-160°C) is recommended. Ultrasonic bonding is
not
recommended.
• The recommended die attach is conductive epoxy, following the manufacturer’s recommended curing temperature.
• For eutectic 80/20 Gold/Tin solder, use a stage temperature of 280-300°C. Maximum time at temperature
is 60 seconds. Use forming gas (90% N2 , 10% H2 ) for best results.
• The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical.
Phone:
+1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
11/03/05
Email:
sales@filcsi.com
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