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2
HS-4423RH
Rad-Hard Dual, Inverting Power MOSFET Drivers
Datasheets,
Related Docs
& Simulations
Description
Key
Features
Parametric
Data
Printer Friendly Version
Application
Diagrams
Related
Devices
Ordering Information
Design-
In
Status Temp.
Active
Mil
Price
US $
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Part No.
HS0-4423RH-Q
Package
Die (Military
Visual)
MSL
N/A
SMD
-
HS9-4423BRH-8
Active
-
16 Ld FlatPack
N/A 5962F9951102QXC
HS9-4423BRH-
Q
HS9-4423RH-8
Active
-
16 Ld FlatPack
N/A 5962F9951102VXC
Active
-
16 Ld FlatPack
N/A 5962F9951101QXC
HS9-4423RH-Q
Active
-
-
-
16 Ld FlatPack
N/A 5962F9951101VXC
16 Ld FlatPack
N/A 5962R9951102TXC
16 Ld FlatPack
N/A 5962F9951101TXC
HS9-4423BRH-T InActive
HS9-4423RH-T
InActive
The price listed is the manufacturer's suggested retail price for quantities between 100 and
999 units. However, prices in today's market are fluid and may change without notice.
MSL
= Moisture Sensitivity Level - per IPC/JEDEC J-STD-020
SMD
= Standard Microcircuit Drawing
Description
The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-
speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages
up to 18V.
The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH
PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high
current outputs allow very quick control of high gate capacitance power MOSFETs, like our Rad
Hard FS055, in high frequency applications.
The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging
the gate capacitance. The output stage incorporates a low voltage lock-out circuit that puts the
outputs into a three-state mode when the supply voltage drops below 10V for the HS-4423RH and
7.5V for the HS-4423BRH.
Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process,
these devices are immune to Single Event Latch-up and have been specifically designed to provide
highly reliable performance in harsh radiation environments.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus
(DSCC). The SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in SMD 5962-99511. A “hot-link”
is provided on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Key Features
Electrically Screened to DESC SMD # 5962-99511
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
Total Dose (Max) 3 x 10
5 RAD(SI)
Latch-Up Immune
Low Dose Rate Immune
IPEAK >2A (Ty p)
Matched Rise and Fall Times (CL = 4300pF) . . . 75ns (Max)
Low Voltage Lock-Out Feature
HS-4423RH <10.0V
HS-4423BRH <7.5V
Wide Supply Voltage Range 12V to 18V
Prop Delay 250ns (Max)
Consistent Delay Times with V
CC
Changes
Low Power Consumption
40mW with Inputs High
20mW with Inputs Low
Low Equiv alent Input Capacitance 3.2pF (Ty p)
ESD Protected 4000V
Related Documentation
Datasheet(s):
Radiation Hardened Dual, Inverting Power MOSFET Drivers
Military SMD(s):
Radiation Hardened Dual Inverting Power MOSFET Driver
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