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IS61NLF12836-10B

产品描述ZBT SRAM, 128KX36, 10ns, CMOS, PBGA119, PLASTIC, BGA-119
产品类别存储    存储   
文件大小151KB,共20页
制造商Integrated Silicon Solution ( ISSI )
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IS61NLF12836-10B概述

ZBT SRAM, 128KX36, 10ns, CMOS, PBGA119, PLASTIC, BGA-119

IS61NLF12836-10B规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码BGA
包装说明PLASTIC, BGA-119
针数119
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间10 ns
其他特性FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)83 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B119
JESD-609代码e0
长度22 mm
内存密度4718592 bit
内存集成电路类型ZBT SRAM
内存宽度36
功能数量1
端子数量119
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装等效代码BGA119,7X17,50
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度2.41 mm
最大待机电流0.02 A
最小待机电流3.14 V
最大压摆率0.3 mA
最大供电电压 (Vsup)3.465 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度14 mm
Base Number Matches1

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IS61NF12832 IS61NF12836 IS61NF25618
IS61NLF12832 IS61NLF12836 IS61NLF25618
128K x 32, 128K x 36 and 256K x 18
FLOW-THROUGH 'NO WAIT' STATE BUS
SRAM
ISSI
®
PRELIMINARY INFORMATION
OCTOBER 2000
FEATURES
100 percent bus utilization
No wait cycles between Read and Write
Internal self-timed write cycle
Individual Byte Write Control
Single R/W (Read/Write) control pin
Clock controlled, registered address,
data and control
Interleaved or linear burst sequence control
using MODE input
Three chip enables for simple depth expansion
and address pipelining for TQFP
Power Down mode
Common data inputs and data outputs
CKE
pin to enable clock and suspend operation
JEDEC 100-pin TQFP, 119 PBGA package
Single +3.3V power supply (± 5%)
NF Version: 3.3V I/O Supply Voltage
NLF Version: 2.5V I/O Supply Voltage
Industrial temperature available
DESCRIPTION
The 4 Meg 'NF' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
network and communications customers. They are
organized as 131,072 words by 32 bits, 131,072 words
by 36 bits and 262,144 words by 18 bits, fabricated with
ISSI
's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE
is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when
WE
is LOW.
Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-8.5*
8.5
10
100
-9
9
12
83
-10
10
12
83
Units
ns
ns
MHz
*This speed available only in NF version
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
11/30/00
Rev. 00C
1

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