SPC6801
P-Channel Trench MOSFET with Schottky Diode
DESCRIPTION
The SPC6801combines the Trench MOSFET technology
with a very low forward voltage drop Schottky barrier
rectifier in an TSOP-6P package. The Trench MOSFET is
the P-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS
trench technology. This high density process is especially
tailored to minimize on-state resistance and provide
superior switching performance. The Schottky diode is
provided to facilitate the implementation of a
bidirectional blocking switch, or for DC-DC conversion
applications.
APPLICATIONS
Battery Powered System
DC/DC Converter
Load Switch
Cell Phone
FEATURES
P-Channel
-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=115mΩ@VGS=-4.5V
-30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V
Schottky
VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP– 6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
2006/11/25
Ver.1
Page 1
SPC6801
P-Channel Trench MOSFET with Schottky Diode
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
A
S
G
D
NC
K
Description
Schottky Anode
MOSFET Source
MOSFET Gate
MOSFET Drain
No
Connect
Schottky Cathode
ORDERING INFORMATION
Part Number
SPC6801ST6RG
※
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※
SPC6801ST6RG : Tape Reel ; Pb – Free
Package
TSOP- 6P
Part
Marking
81YW
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Schottky Reverse Voltage
Continuous Forward Current
Pulsed Forward Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
≤
10sec
Steady State
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
V
KA
I
F
I
FM
I
S
P
D
T
J
T
STG
R
θJA
-1.4
-30
±12
-2.8
-2.1
-10
20
1
0.7
10
Typical
P-Channel
Schottky
Unit
V
V
A
A
V
A
A
A
W
℃
℃
℃/W
1.15
0.75
-55/150
-55/150
52
90
0.9
0.6
2006/11/25
Ver.1
Page 2
SPC6801
P-Channel Trench MOSFET with Schottky Diode
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
MOSFET Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
MOSFET Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Schottky Parameters
Forward Voltage Drop
Reverse Breakdown Voltage
Maximum reverse leakage current
Junction Capacitance
SchottkyReverse Recovery Time
Schottky Reverse Recovery Charge
V
F
V
BR
Irm
C
T
T
rr
Q
rr
I
F
= 500mA
I
R
= 500uA
V
R
= 20V
V
R
= 20V , T
J
=70℃
V
R
= 10V
V
R
= 0V , f=1MHz
I
F
=1A, dI/dt=100A/μs
I
F
=1A, dI/dt=100A/μs
20
0.1
1
31
120
5.4
0.8
0.41
0.47
V
V
mA
pF
10
ns
nC
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V ,R
L
=15Ω
I
D
≡-1.0A
,V
GEN
=-10V
R
G
=3Ω
V
DS
=-15V ,V
GS
=0V
f=1MHz
V
DS
=-15V ,V
GS
=-4.5V
I
D
≡-2.0A
5.8
0.8
1.5
380
55
40
6
3.9
40
15
ns
pF
nC
V
(BR)DSS
V
GS
=0V,I
D
=-10uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±20V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
T
J
=55℃
V
DS
= -5V,V
GS
=-4.5V
V
GS
=-10V,I
D
=-2.8A
V
GS
=-4.5V,I
D
=-2.5A
V
GS
=-2.5V,I
D
=-1.5A
V
DS
=-10V,I
D
=-2.8A
I
S
=-1.2A,V
GS
=0V
-30
-0.4
-1.0
±100
-1
-10
-4
0.085
0.100
0.135
4.0
-0.8
0.105
0.115
0.150
-1.2
V
nA
uA
A
Ω
S
V
Symbol
Conditions
Min.
Typ
Max.
Unit
2006/11/25
Ver.1
Page 3
SPC6801
P-Channel Trench MOSFET with Schottky Diode
TYPICAL CHARACTERISTICS ( P-Channel MOSFET )
2006/11/25
Ver.1
Page 4
SPC6801
P-Channel Trench MOSFET with Schottky Diode
TYPICAL CHARACTERISTICS ( P-Channel MOSFET )
2006/11/25
Ver.1
Page 5
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