Datasheet> 器件分类 > 分立半导体> 晶体管> IRFR15N20DTRL

IRFR15N20DTRL: 产品描述Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3; 产品类别分立半导体晶体管; 文件大小224KB，共11页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRFR15N20DTRL概述

Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRFR15N20DTRL规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
雪崩能效等级（Eas）	260 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (Abs) (ID)	17 A
最大漏极电流 (ID)	17 A
最大漏源导通电阻	0.165 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
湿度敏感等级	1
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	245
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	140 W
最大脉冲漏极电流 (IDM)	68 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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PD - 95355A

SMPS MOSFET

Applications

High frequency DC-DC converters

Lead-Free

Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current

HEXFET

Power MOSFET

IRFR15N20DPbF

IRFU15N20DPbF

17A

DSS

200V

DS(on)

max

0.165Ω

D-Pak

IRFR15N20D

I-Pak

IRFU15N20D

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Power Dissipation*

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

140

3.0

0.96

± 30

8.3

-55 to + 175

300 (1.6mm from case )

Units

W/°C

V/ns

°C

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

Typ.

–––

Max.

1.04

110

Units

°C/W

Notes

through

are on page 10

www.irf.com

1/17/05

IRFR15N20DTRL相似产品对比

	IRFR15N20DTRL	IRFR15N20DTRRP	IRFR15N20DTR	IRFR15N20DTRRPBF	IRFR15N20DTRLPBF	IRFR15N20DTRR	IRFR15N20DHR
描述	Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	mosfet N-CH 200v 17a dpak	Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2
是否Rohs认证	不符合	-	不符合	符合	符合	不符合	不符合
厂商名称	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	TO-252AA	-	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2	-	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, PLASTIC, DPAK-3	LEAD FREE, PLASTIC, DPAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	3	-	3	3	3	3	3
Reach Compliance Code	compliant	-	unknown	unknown	unknown	compliant	compliant
ECCN代码	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	260 mJ	-	260 mJ	260 mJ	260 mJ	260 mJ	260 mJ
外壳连接	DRAIN	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	-	200 V	200 V	200 V	200 V	200 V
最大漏极电流 (Abs) (ID)	17 A	-	-	17 A	17 A	17 A	-
最大漏极电流 (ID)	17 A	-	17 A	17 A	17 A	17 A	17 A
最大漏源导通电阻	0.165 Ω	-	0.165 Ω	0.165 Ω	0.165 Ω	0.165 Ω	0.165 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA	-	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 代码	R-PSSO-G2	-	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609代码	e0	-	e0	e3	e3	e0	e0
湿度敏感等级	1	-	1	1	1	1	1
元件数量	1	-	1	1	1	1	1
端子数量	2	-	2	2	2	2	2
工作模式	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	175 °C	-	-	175 °C	175 °C	175 °C	-
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	245	-	NOT SPECIFIED	260	260	245	245
极性/信道类型	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	140 W	-	-	140 W	140 W	140 W	-
最大脉冲漏极电流 (IDM)	68 A	-	68 A	68 A	68 A	68 A	68 A
认证状态	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
表面贴装	YES	-	YES	YES	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	-	TIN LEAD	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb)	TIN LEAD
端子形式	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	30	-	NOT SPECIFIED	30	30	30	30
晶体管应用	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	-	1	1	1	1	1

IRFR15N20DTRL

IRFR15N20DTRL概述

IRFR15N20DTRL规格参数

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IRFR15N20DTRL相似产品对比

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