Freescale Semiconductor
Technical Data
Document Number: MRF8S21140H
Rev. 0, 5/2010
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Single-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
970 mA, P
out
= 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.7
17.9
18.1
h
D
(%)
32.1
31.7
31.7
Output PAR
(dB)
6.2
6.4
6.4
ACPR
(dBc)
-37.0
-37.5
-37.5
MRF8S21140HR3
MRF8S21140HSR3
2110-2170 MHz, 34 W AVG., 28 V
W-CDMA, LTE
LATERAL N-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
]
126 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
CASE 465-06, STYLE 1
NI-780
MRF8S21140HR3
CASE 465A-06, STYLE 1
NI-780S
MRF8S21140HSR3
Value
-0.5, +65
-6.0, +10
32, +0
-65 to +150
150
225
168
0.86
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 34 W CW, 28 Vdc, I
DQ
= 970 mA, 2140 MHz
Case Temperature 80°C, 150 W CW
(1)
, 28 Vdc, I
DQ
= 970 mA, 2140 MHz
Symbol
R
θJC
0.47
0.42
Value
(3,4)
Unit
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S21140HR3 MRF8S21140HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 970 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 970 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.0
—
3.8
0.1
1.8
2.6
5.2
0.18
2.5
—
6.8
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 970 mA, P
out
= 34 W Avg., f = 2140 MHz,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16.7
29.7
5.9
—
—
17.9
31.7
6.4
-37.5
-16
19.7
—
—
-36
-7
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 970 mA, P
out
= 34 W Avg.,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.7
17.9
18.1
h
D
(%)
32.1
31.7
31.7
Output PAR
(dB)
6.2
6.4
6.4
ACPR
(dBc)
-37.0
-37.5
-37.5
IRL
(dB)
-17
-16
-16
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21140HR3 MRF8S21140HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 970 mA, 2110-2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 55 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 34 W Avg.
Gain Variation over Temperature
(-30
°C
to +85°C)
Output Power Variation over Temperature
(-30
°C
to +85°C)
P1dB
IMD
sym
—
VBW
res
G
F
ΔG
ΔP1dB
—
—
—
—
10
53
0.5
0.016
0.018
(1)
—
—
—
—
—
MHz
dB
dB/°C
dBm/°C
—
126
—
W
MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S21140HR3 MRF8S21140HSR3
RF Device Data
Freescale Semiconductor
3
C18 C19
R3
R1
C11*
C1
C6
R2
C2
C7*
C8* R4
C10*
C14*
C15*
C3 C4
C17
C20
CUT OUT AREA
C5
C9*
C12*
C16
C13*
MRF8S21140
Rev. 0
C21
C22 C23
C24
*C7, C8, C9, C10, C11, C12, C13, C14, and C15 are mounted vertically.
Figure 1. MRF8S21140HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S21140HR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2
C3
C4, C17, C21
C5, C16
C6
C7
C8, C9, C11, C13, C14
C10, C12
C15
C18, C19, C22, C23
C20, C24
R1, R2
R3
R4
PCB
Description
10
μF
Chip Capacitor
0.01
μF
Chip Capacitor
4.7
μF
Chip Capacitor
6.8 pF Chip Capacitors
11 pF Chip Capacitors
0.5 pF Chip Capacitor
1.2 pF Chip Capacitor
0.3 pF Chip Capacitors
0.1 pF Chip Capacitors
0.2 pF Chip Capacitor
10
μF
Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
2 kΩ, 1/4 W Chip Resistors
0
Ω,
3.5 A Chip Resistor
2.37
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 2.55
Part Number
T491D106K055AT
C1825C103K1GAC
GRM43ER61H475MA88L
ATC100B6R8CT500XT
ATC100B110JT500XT
ATC100B0R5BT500XT
ATC100B1R2BT500XT
ATC100B0R3BT500XT
ATC100B0R1BT500XT
ATC100B0R2BT500XT
GRM55DR61H106KA88L
MCGPR63V477M13X26-RH
CRCW12062K00FKEA
CRCW12060000Z0EA
CRCW12062R37FNEA
AD255A
Manufacturer
Kemet
Kemet
Murata
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Murata
Multicomp
Vishay
Vishay
Vishay
Arlon
MRF8S21140HR3 MRF8S21140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 34 W (Avg.), I
DQ
= 970 mA
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
G
ps
η
D
, DRAIN
EFFICIENCY (%)
20
19.5
19
G
ps
, POWER GAIN (dB)
18.5
18
17.5
17
16.5
16
15.5
15
2060
2080
2100
2120
ACPR
2140
2160
2180
2200
IRL
η
D
40
36
32
28
24
-20
ACPR (dBc)
PARC -24
-28
-32
-36
-40
2220
0
-6
-12
-18
-24
-30
IRL, INPUT RETURN LOSS (dB)
0
-1
-2
-3
-4
-5
PARC (dB)
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 34 Watts Avg.
-1 0
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 55 W (PEP), I
DQ
= 970 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3-U
-3 0
IM3-L
IM5-U
-4 0
IM5-L
-5 0
IM7-L
IM7-U
1
10
TWO-T ONE SPACING (MHz)
100
-2 0
-60
Figure 3. Intermodulation Distortion Products
versus Two-T one Spacing
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18
G
ps
, POWER GAIN (dB)
17
16
15
14
13
1
0
-1
-2
-3
-4
-5
20
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
40
60
80
100
-2 dB = 44 W
-3 dB = 60 W
G
ps
57
51
η
D
45
39
33
27
PARC
21
120
-50
-20
-25
-30
-35
-40
-45
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 970 mA, f = 2140 MHz
Single-Carrier W-CDMA
-1 dB = 32 W
ACPR
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
MRF8S21140HR3 MRF8S21140HSR3
RF Device Data
Freescale Semiconductor
5
η
D
,
DRAIN EFFICIENCY (%)
模拟电子
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