IRFB20N50K, SiHFB20N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
110
33
54
Single
D
FEATURES
500
0.21
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low R
DS(on)
• Compliant to RoHS Directive 2002/95/EC
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
S
G
D
S
N-Channel
MOSFET
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB20N50KPbF
SiHFB20N50K-E3
IRFB20N50K
SiHFB20N50K
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
20
12
80
2.2
330
20
28
280
10
- 55 to + 150
300
d
10
W/°C
mJ
A
mJ
W
V/ns
°C
N
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
J
= 25 °C, L = 1.6 mH, R
g
= 25
Ω,
I
AS
= 20 A.
c. I
SD
≤
20 A, dI/dt
≤
350 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91101
S09-2236-Rev. D, 05-Apr-10
www.vishay.com
1
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
58
-
0.45
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 12 A
b
V
DS
= 50 V, I
D
= 12 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
I
D
= 20 A, V
DS
= 400 V
see fig. 6 and 13
b
500
-
3.0
-
-
-
-
11
-
0.61
-
-
-
-
0.21
-
-
-
5.0
± 100
50
250
0.25
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V
-
-
-
-
-
-
-
-
-
-
2870
320
34
3480
85
160
-
-
-
22
74
45
33
-
-
-
-
-
-
110
33
54
-
-
-
-
ns
nC
pF
V
DD
= 250 V, I
D
= 20 A
R
g
= 7.5
Ω,
V
GS
= 10 V, see fig.
10
b
-
-
-
-
-
-
-
-
-
-
-
520
5.3
20
A
80
1.5
780
8.0
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 20 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 20 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Pulse width
≤
400 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91101
S09-2236-Rev. D, 05-Apr-10
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
VGS
Top 15
V
12
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
Bottom 5.0
V
100.0
I
D
, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
T J = 150 °C
10.0
1
1.0
T J = 25 °C
0.1
5.0V
20
µs
Pulse
Width
T
J
= 25 °C
0.1
V
DS
= 50 V
0.0
0.01
0.1
1
10
100
20 ms Pulse width
5.0
6.0
7.0
8.0
9.0
10.0
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
ID, Drain-to-Source Current (A)
10
r
DS(on)
, Drain-to-Source On-Resistance
(normalised)
VGS
Top 15
V
12
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
Bottom 5.0
V
3.5
I
D
= 20 A
3.0
2.5
2.0
1
5.0V
1.5
0.1
1.0
20
µs
Pulse
Width
T
J
= 25 °C
0.01
0.1
1
10
100
0.5
V
GS
= 10
V
0.0
- 60
- 40
- 20
0
20
40
60
80
100
120
140
160
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91101
S09-2236-Rev. D, 05-Apr-10
www.vishay.com
3
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
100000
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
100.0
10000
I
SD
, Reverse Drain Current (A)
C, Capacitance (pF)
T
J
= 150 °C
10.0
C
iss
1000
C
oss
100
1.0
C
rss
10
1
10
100
1000
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
V
GS
= 0
V
1.0
1.2
V
DS
, Drain-to-Source
Voltage
(V)
V
SD
, Source-to Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
?
? ? ???
1000
V
DS
= 400
V
V
DS
= 250
V
V
DS
= 100
V
Operation in this area limited
by
r
DS(on)
I
D
, Drain-to-Source Current (A)
V
GS
, Gate-to-Source
Voltage
(V)
16
100
12
10
100
µs
1 ms
8
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
10 ms
4
For test circuit
see figure 13
0
0
20
40
60
80
100
120
0.1
1000
10000
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91101
S09-2236-Rev. D, 05-Apr-10
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
R
D
20
V
DS
V
GS
D.U.T.
+
16
R
g
-
V
DD
I
D
, Drain Current (A)
12
10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
8
Fig. 10a - Switching Time Test Circuit
V
DS
90
%
4
0
25
50
75
100
125
150
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z
thJC
)
0.1
0.20
0.10
0.01
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor D = t1/t2
2. Peak TJ = PDM x TthJC + TC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
15
V
t
p
V
DS
L
Driver
R
g
20
V
t
p
D.U.T.
I
AS
0.01
Ω
+
A
-
V
DD
A
A
I
AS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91101
S09-2236-Rev. D, 05-Apr-10
www.vishay.com
5
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