Power Module
1200V IGBT Family
MG12300D-BN2MM Series 300A Dual IGBT
Features
• High short circuit
capability, self limiting
short circuit current
• IGBT CHIP(Trench+Field
Stop technology)
3
RoHS
®
• Fast switching and short
tail current
• Free wheeling diodes
with fast and soft reverse
recovery
• Low switching losses
• V
CE(sat)
with positive
temperature coefficient
Applications
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E71639
• Motor drives
• Inverter
• Converter
• SMPS and UPS
• Welder
• Induction Heating
Module Characteristics
(T
C
= 25°C, unless otherwise specified)
Symbol
T
J max)
T
J op
T
stg
V
isol
CTI
Torque
Torque
Weight
Parameters
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Module-to-Sink
Module Electrodes
AC, t=1min
Module case exposed to 0.1% ammonium
chloride solution per UL and IEC standards
Recommended (M6)
Recommended (M6)
350
3
2.5
320
5
5
-40
-40
3000
Test Conditions
Min
Typ
Max
150
125
125
Unit
°C
°C
°C
V
V
N·m
N·m
g
Absolute Maximum Ratings
(T
C
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG12300D-BN2MM
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Parameters
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Test Conditions
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
Values
1200
±20
480
300
600
1450
Unit
V
V
A
A
A
W
V
A
A
A
A
2
s
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=125°C, t=10ms, V
R
=0V
1200
480
300
600
18000
1
Power Module
1200V IGBT Family
Electrical and Thermal Specifications
(T
C
= 25°C, unless otherwise specified)
Symbol
IGBT
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
Gint
Q
ge
C
ies
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
SC
R
thJC
Diode
V
F
I
RRM
Q
rr
E
rec
R
thJCD
Forward Voltage
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
Junction-to-Case Thermal
Resistance (Per Diode)
I
F
=300A , V
GE
=0V, T
J
=25°C
I
F
=300A , V
GE
=0V, T
J
=125°C
I
F
=300A , V
R
=600V
d
iF
/dt=-6000A/μs
T
J
=125°C
1.65
1.65
270
56
26
0.15
V
V
A
μC
mJ
K/W
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Intergrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
Short Circuit Current
Junction-to-Case Thermal
Resistance (Per IGBT)
V
CC
=600V
I
C
=300A
R
G
=2.4Ω
V
GE
=±15V
Inductive Load
V
CE
=600V, I
C
=300A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
t
psc
≤10μS , V
GE
=15V
T
J
=125°C,V
CC
=900V
V
CE
=V
GE
, I
C
=12mA
I
C
=300A, V
GE
=15V, T
J
=25°C
I
C
=300A, V
GE
=15V, T
J
=125°C
V
CE
=1200V, V
GE
=0V, T
J
=25°C
V
CE
=1200V, V
GE
=0V, T
J
=125°C
V
CE
=0V,V
GE
=±15V, T
J
=125°C
-400
2.5
2.8
21
0.85
160
170
40
45
450
520
100
160
16.5
25
24.5
37
1200
0.085
5.0
5.8
1.7
1.9
1
5
400
6.5
V
V
V
mA
mA
μA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
Parameters
Test Conditions
Min
Typ
Max
Unit
MG12300D-BN2MM
2
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Power Module
1200V IGBT Family
Figure 1: Typical Output Characteristics
Figure 2: Typical Output Characteristics
600
500
400
I
C
(A)
V
GE
=15V
V
GE=
19V
V
GE=
17V
V
GE=
15V
V
GE=
13V
T
Vj
=25°C
V
GE=
11V
300
200
100
0
0
0.5
1.0
1.5
V
CE
V
2.0
2.5
3.0
T
Vj
=125°C
V
GE=
9V
Figure 3: Typical Transfer characteristics
Figure 4: Switching Energy vs. Gate Resistor
Figure 5: Switching Energy vs. Collector Current
Figure 6: Reverse Biased Safe Operating Area
MG12300D-BN2MM
3
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Power Module
1200V IGBT Family
Figure 7: Diode Forward Characteristics
Figure 8: Switching Energy vs. Gate Resistort
Figure 9: Switching Energy vs. Forward Current
Figure 10: Transient Thermal Impedance
MG12300D-BN2MM
4
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Power Module
1200V IGBT Family
Dimensions-Package D
Circuit Diagram and Pin Assignment
Packing Options
Part Number
MG12300D-BN2MM
Marking
MG12300D-BN2MM
Weight
320g
Packing Mode
Bulk Pack
M.O.Q
60
Part Numbering System
Part Marking System
MG12300D-BN2MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CURRENT RATING
300: 300A
ASSEMBLY SITE
WAFER TYPE
CIRCUIT TYPE
B: 2x(IGBT+FWD)
PACKAGE TYPE
D: Package D
MG12300D-BN2MM
5
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
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