TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
DEVICES
LEVELS
2N3996
2N3997
2N3998
2N3999
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(2)
@ T
C
= +100°C
(3)
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
, T
stg
Value
80
100
8.0
0.5
10
(1)
2.0
30
-65 to +200
3.33
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
°C/W
TO-111
2N3996, 2N3997
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
R
θJC
Note:
(1) This value applies for Tp
≤
1.0ms, duty cycle
≤
50%
(2) Derate linearly 11.4 mW/°C for T
A
> +25°C
(3) Derate linearly 300 mW/°C for T
C
> +100°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 50mAdc
Collector-Emitter Breakdown Voltage
I
C
= 10µAdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc
Collector-Emitter Cutoff Current
V
CE
= 80Vdc, V
BE
= 0V
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 8.0Vdc
V
(BR)CEO
V
(BR)CBO
I
CEO
I
CES
I
EBO
80
100
10
200
200
10
Vdc
Vdc
µAdc
ηAdc
ηAdc
µAdc
TO-59
2N3998, 2N3999
T4-LDS-0165 Rev. 1 (100688)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 2.0Vdc
I
C
= 1.0Adc, V
CE
= 2.0Vdc
I
C
= 5.0Adc, V
CE
= 5.0Vdc
I
C
= 50mAdc, V
CE
= 2.0Vdc
I
C
= 1.0Adc, V
CE
= 2.0Vdc
I
C
= 5.0Adc, V
CE
= 5.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 1.0Adc, I
B
= 0.1Adc
I
C
= 5.0Adc, I
B
= 0.5Adc
Base-Emitter Saturation Voltage
I
C
= 1.0Adc, I
B
= 0.1Adc
I
C
= 5.0Adc, I
B
= 0.5Adc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0Adc, V
CE
= 5.0Vdc, f = 10MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
SAFE OPERATING AREA
DC Tests
T
C
= +100°C, 1 Cycle, t = 1.0s
Test 1
V
CE
= 80Vdc, I
C
= 0.08Adc
Test 2
V
CE
= 20Vdc, I
C
= 1.5Adc
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
Symbol
|h
fe
|
Min.
3.0
Max.
12
150
pF
Unit
2N3996, 2N3998
h
FE
2N3997, 2N3999
30
40
15
60
80
20
V
CE(sat)
Symbol
Min.
Max.
Unit
120
240
0.25
2.0
0.6
1.2
1.6
Vdc
V
BE(sat)
Vdc
C
obo
T4-LDS-0165 Rev. 1 (100688)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Ltr
CH
A
1
CD
CD
1
HF
PS
PS
1
HT
OAH
UD
SL
SU
φT
φT
1
SD
Z
Z
1
Dimensions
Millimeters
Inches
Min
Max
Min
Max
.345
.400
8.76
10.16
.250
6.35
.370
.437
9.40
11.10
.318
.380
8.08
9.65
.424
.437
10.77
11.10
.180
.215
4.57
5.46
.080
.110
2.03
2.79
.090
.140
2.29
3.56
.575
.675
14.61
17.15
.155
.189
3.94
4.80
.400
.455
10.16
11.56
.078
1.98
.040
.065
1.02
1.65
.040
.065
1.02
1.65
.190-32 UNF-2A
.002
0.05
.006
0.15
Notes
3
3
5
5
2, 6
1
7
4
8
NOTES:
1. Terminal 1, emitter; terminal 2, base; terminal 3, collector; terminal 4, case.
2. Chamfer or undercut on one or both ends of hexagonal portion is optional.
3. The outline contour with the exception of the hexagon is optional within cylinder defined by CD1 and A1.
4. Terminal r can be flattened and pierced or hook type. A visual index is required when the flattened and pierced tab
terminal contour (identical to the adjacent terminals) option is used. The case terminal (hook) is mechanically connected
to the case. The other three terminals shall be electrically isolated from the case.
5. Angular orientation of terminals with respect to hexagon is optional.
6. HT dimension does not include sealing flanges.
7. SU is the length of incomplete or undercut threads.
8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal Service Handbook H28, part I.
9. Dimensions are in inches.
* 10. Millimeters are giving for general information only.
* 11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 1.
Physical dimensions for transistor types 2N3996 and 2N3997 - Continued.
T4-LDS-0165 Rev. 1 (100688)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Ltr
CH
A
1
CD
1
CD
HF
PS
PS
1
PS
2
PS
3
HT
OAH
UD
SL
SU
φT
φT
1
SD
Dimensions
Millimeters
Inches
Min
Max
Min
Max
.345
.400
8.76
10.16
.250
6.35
.318
.380
8.08
9.65
.370
.437
9.40
11.10
.424
.437
10.77 11.10
.125
.165
3.18
4.19
.110
.145
2.79
3.68
.090
.140
2.29
3.56
.185
.215
4.70
5.46
.090
.140
2.29
3.56
.575
.675
14.61 17.15
.155
.189
3.94
4.80
.400
.455
10.16 11.56
.078
1.98
.040
.065
1.02
1.65
.040
.065
1.02
1.65
.190-32 UNF-2A
Notes
4, 7, 8
4, 7
4, 7, 8
4, 7, 8
5
9
3
NOTES:
1.
Dimensions are in inches. Millimeters are given for general information only
2.
Collector shall be electrically connected to the case. This terminal may be flattened and pierced only when the 90 degree
option is used.
3.
SD is the pitch diameter of coated threads. Reference: Screw thread standards for Federal Service Handbook H28, part I.
4.
The orientation of the terminals in relation to the hex flats is not controlled.
5.
All three terminals.
6.
The case temperature may be measured anywhere on the seating plane within .125 (3.18 mm) of the stud.
7.
Terminal spacing measured at the base seat only.
8.
Dimensions PS, PS1, PS2, and PS3 are measured from the centerline of terminals.
9.
Maximum unthreaded dimension.
10. This dimension applies to the location of the center line of the terminals.
11. A 90 degree angle lead orientation as shown may be used at the option of the manufacturer. All dimensions of the basic
outline except PS, PS1, and the 120 lead angle apply to this option.
12. Terminal 1, emitter; terminal 2, base; terminal 3, collector.
13. A slight chamfer or undercut on one or both ends of the hexagonal is optional.
* 14. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 2.
Physical dimensions for transistor types 2N3998 and 2N3999
T4-LDS-0165 Rev. 1 (100688)
Page 4 of 4
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