Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
Rev. 02 — 19 February 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
=
−5
V;
I
C
=
−2
mA
Conditions
open base
Min
-
-
110
Typ
-
-
-
Max
−65
−100
-
Unit
V
mA
Per transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
1
2
sym018
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
3
NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
3. Ordering information
Table 3.
Ordering information
Package
Name
BC856S
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BC856S
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
5F*
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
Conditions
open emitter
open base
open collector
T
amb
≤
25
°C
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
−65
−65
Max
−80
−65
−5
−100
220
250
300
400
150
+150
+150
Unit
V
V
V
mA
mW
mW
mW
mW
°C
°C
°C
Per transistor
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
BC856S_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
2 of 12
NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
500
P
tot
(mW)
400
(2)
(1)
006aab419
300
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT363 (SC-88)
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
-
-
-
Max
568
500
230
Unit
K/W
K/W
K/W
Per transistor
-
-
-
-
416
313
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
BC856S_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
3 of 12
NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
006aab420
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab421
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC856S_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
4 of 12
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
