Si4982DY

Vishay Siliconix

Dual N-Channel 100-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

100

R

DS(on)

(Ω)

0.150 at V

GS

= 10 V

0.180 at V

GS

= 6 V

I

D

(A)

2.6

2.4

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFETs

• Compliant to RoHS Directive 2002/95/EC

D

SO-8

S

1

G

1

S

2

G

2

1

2

3

4

Top View

S

8

7

6

5

D

1

D

1

D

2

D

2

G

Ordering Information:

Si4982DY-T1-E3

(Lead (Pb)-free)

Si4982DY-T1-GE3

(Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

T

A

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150 °C)

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

T

A

= 25 °C

T

A

= 70 °C

T

A

= 25 °C

T

A

= 70 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

J

, T

stg

Limit

100

± 20

2.6

2.1

20

1.7

2.0

1.3

- 55 to 150

W

°C

A

Unit

V

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

Symbol

R

thJA

Limit

62.5

Unit

°C/W

Notes:

a. Surface Mounted on FR4 board, t

≤

10 s.

Document Number: 70748

S09-0870-Rev. C, 18-May-09

www.vishay.com

1

Si4982DY

Vishay Siliconix

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

b

Forward Transconductance

b

Diode Forward Voltage

b

Dynamic

a

Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

I

F

= 1.7 A, dI/dt = 100 A/µs

V

DD

= 50 V, R

L

= 50

Ω

I

D

≅

1 A, V

GEN

= 10 V, R

g

= 6

Ω

1

10

30

10

60

V

DS

= 50 V, V

GS

= 10 V, I

D

= 2.6 A

15

2.7

4.0

4.4

20

60

20

90

ns

Ω

30

nC

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

V

SD

V

DS

= V

GS

, I

D

= 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= 100 V, V

GS

= 0 V

V

DS

= 100 V, V

GS

= 0 V, T

J

= 55 °C

V

DS

=

5 V, V

GS

= 10 V

V

GS

=

10 V, I

D

= 2.6 A

V

GS

= 6 V, I

D

= 2.4 A

V

DS

= 15 V, I

D

= 2.6 A

I

S

= 1.7 A, V

GS

= 0 V

15

0.130

0.140

11

1.2

0.150

0.180

2

± 100

1

20

V

nA

µA

A

Ω

S

V

Symbol

Test Conditions

Min.

Typ.

a

Max.

Unit

Notes:

a. For design aid only; not subject to production testing.

b. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 70748

S09-0870-Rev. C, 18-May-09

Si4982DY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

20

16

I

D

- Drain Current (A)

V

GS

= 10 V thru 6 V

I

D

- Drain Current (A)

16

12

5V

8

12

8

T

C

= 125 °C

4

25 °C

4

3V

0

1

2

3

4

4V

- 55 °C

0

1

2

3

4

5

6

V

DS

- Drain-to-Source Voltage (V)

V

GS

- Gate-to-Source Voltage (V)

Output Characteristics

0.25

1200

Transfer Characteristics

R

DS(on)

- On-Resistance (Ω)

0.20

900

V

GS

= 6 V

0.15

V

GS

= 10 V

0.10

C - Capacitance (pF)

C

iss

600

300

0.05

C

oss

C

rss

0.00

0

4

8

12

16

20

0

20

40

60

80

100

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage

On-Resistance vs. Drain Current

20

V

DS

= 50 V

I

D

= 2.6 A

2.5

V

GS

= 10 V

I

D

= 2.6 A

Capacitance

V

GS

- Gate-to-Source Voltage (V)

16

2.0

R

DS(on)

- On-Resistance

(Normalized)

12

1.5

8

1.0

4

0.5

0

7

14

21

28

0.0

- 50

- 25

0

25

50

75

100

125

150

Q

g

- Total Gate Charge (nC)

T

J

- Junction Temperature (°C)

Gate Charge

On-Resistance vs. Junction Temperature

Document Number: 70748

S09-0870-Rev. C, 18-May-09

www.vishay.com

3

Si4982DY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

20

0.30

0.25

10

I

S

- Source Current (A)

0.20

I

D

= 2.6 A

0.15

R

DS(on)

-

T

J

= 25 °C

1

0

0.6

0.8

0.2

0.4

1.0

V

SD

- Source-to-Drain Voltage (V)

1.2

0.00

0

2

4

6

8

10

V

GS

- Gate-to-Source Voltage (V)

T

J

= 150 °C

0.10

0.05

Source-Drain Diode Forward Voltage

0.6

50

On-Resistance vs. Gate-to-Source Voltage

0.3

V

GS(th)

Variance (V)

40

0.0

Power (W)

I

D

= 250

µA

- 0.3

30

20

- 0.6

10

- 0.9

0

0.01

- 1.2

- 50

- 25

0

25

50

75

100

125

150

0.10

1.00

Time (s)

10.00

T

J

- Temperature (°C)

Threshold Voltage

2

1

Duty Cycle = 0.5

Normalized Effective Transient

Thermal Impedance

Single Pulse Power

0.2

0.1

0.05

Notes:

P

DM

t

1

t

2

1. Duty Cycle, D =

t

1

t

2

0.02

Single Pulse

0.01

10

-4

10

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

1

2. Per Unit Base = R

thJA

= 62.5 °C/W

3. T

JM

- T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

10

30

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see

www.vishay.com/ppg?70748.

www.vishay.com

4

Document Number: 70748

S09-0870-Rev. C, 18-May-09

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 08-Feb-17

1

Document Number: 91000

参数名称	属性值
是否Rohs认证	符合
厂商名称	Vishay(威世)
包装说明	,
Reach Compliance Code	compliant
最大漏极电流 (Abs) (ID)	2.6 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e3
湿度敏感等级	1
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	2 W
表面贴装	YES
端子面层	Matte Tin (Sn)

	SI4982DY-E3	SI4982DY
描述	MOSFET 100V 2.6A 2W	MOSFET 100V 2.6A 2W
是否Rohs认证	符合	不符合
厂商名称	Vishay(威世)	Vishay(威世)
Reach Compliance Code	compliant	compliant
最大漏极电流 (Abs) (ID)	2.6 A	2.6 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e3	e0
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
极性/信道类型	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	2 W	2 W
表面贴装	YES	YES
端子面层	Matte Tin (Sn)	Tin/Lead (Sn/Pb)

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