IRGP4062-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
Temperature co-efficient
Tight parameter distribution
Lead Free Package
C
V
CES
= 600V
I
C
= 24A, T
C
= 100°C
G
E
t
SC
5μs,
T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
Gate
E
C
G
TO-247AD
C
Collector
E
Emitter
Base part number
IRGP4062-EPbF
Package Type
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Orderable part number
IRGP4062-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
ST G
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
600
48
24
72
96
±20
±30
250
125
-55 to +175
Units
V
c
A
V
W
°C
Thermal Resistance
Parameter
R
JC
R
CS
R
JA
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.50
–––
Max.
0.65
–––
40
Units
°C/W
1
www.irf.com
© 2012 International Rectifier
October 10, 2012
IRGP4062-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
(BR)CE S
/
T
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
Typ. Max. Units
—
0.30
1.60
2.03
2.04
—
-18
17
2.0
775
—
—
—
1.95
—
—
6.5
—
—
25
—
±100
nA
V
S
μA
V
V
Conditions
V
GE
= 0V, I
C
= 100μA
Collec
tor-to-Em r Bre kd nVolta e
itte
a ow
g
T emperature Coeff. of B reakdow Voltage
n
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 24A, V
GE
= 15V, T
J
= 25°C
I
C
= 24A, V
GE
= 15V, T
J
= 150°C
I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 700μA
V
CE
= 50V, I
C
= 24A, PW = 80μs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
GE
= ±20V
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
d
V
CE(on)
V
GE(th)
V
GE (th)
/
T J
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
gfe
I
CES
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Min.
—
—
—
—
—
—
—
—
—
Typ. Max. Units
50
13
21
115
600
715
41
22
104
29
420
840
1260
40
24
125
39
1490
129
45
75
20
31
201
700
901
53
31
115
41
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
ns
μJ
ns
μJ
nC
I
C
= 24A
V
GE
= 15V
V
CC
= 400V
Conditions
e
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10, L = 200μH, L
S
= 150nH, T
J
= 25°C
E nergy los s es include tail & diode revers e recovery
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10, L = 200μH, L
S
= 150nH, T
J
= 25°C
e
—
—
—
—
—
—
—
—
—
—
—
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
=10, L= 200μH, L
S
=150nH, T
J
= 175°C
E nergy los s es include tail & diode revers e recovery
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10, L = 200μH, L
S
= 150nH
T
J
= 175°C
T
J
= 175°C, I
C
= 96A
FULL SQUARE
5
—
—
μs
V
CC
= 480V, Vp =600V
Rg = 10, V
GE
= +20V to 0V
V
CC
= 400V, Vp =600V
Rg = 10, V
GE
= +15V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100μH, R
G
= 10
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Turn-on energy is measured using the same co-pak diode as IRGP4062DPbF.
2
www.irf.com
© 2012 International Rectifier
October 10, 2012
IRGP4062-EPbF
50
45
40
35
Ptot (W)
250
200
150
100
50
0
300
30
IC (A)
25
20
15
10
5
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
100
10μsec
IC (A)
10
100μsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
1msec
DC
IC (A)
10
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
175°C; V
GE
=15V
90
80
70
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
90
80
70
60
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
ICE (A)
ICE (A)
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
50
40
30
20
10
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
7
8
0
1
2
3
4
VCE (V)
5
6
7
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
3
www.irf.com
© 2012 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
October 10, 2012
IRGP4062-EPbF
90
80
70
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
18
16
14
VCE (V)
ICE (A)
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
6
7
8
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 12A
ICE = 24A
ICE = 48A
15
20
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
20
18
16
14
20
18
16
14
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
VCE (V)
10
8
6
4
2
0
5
10
VGE (V)
ICE = 24A
ICE = 48A
VCE (V)
12
ICE = 12A
12
10
8
6
4
2
0
ICE = 12A
ICE = 24A
ICE = 48A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
120
100
80
T J = 175°C
T J = 25°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 175°C
16
14
12
280
240
200
Current (A)
Time (μs)
ICE (A)
60
40
20
0
0
5
VGE (V)
10
15
10
8
6
4
8
10
12
14
16
18
VGE (V)
160
120
80
40
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
4
www.irf.com
© 2012 International Rectifier
Fig. 12
- V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
October 10, 2012
IRGP4062-EPbF
1800
1600
1400
1000
tdOFF
Swiching Time (ns)
1200
Energy (μJ)
1000
800
600
400
200
0
0
10
EOFF
100
td ON
tF
10
tR
EON
1
20
30
IC (A)
40
50
60
10
20
30
IC (A)
40
50
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
1600
1400
1200
EON
EOFF
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
1000
Energy (μJ)
1000
800
600
400
200
0
0
25
Swiching Time (ns)
tdOFF
100
tdON
tF
tR
10
50
75
100
125
0
25
50
75
100
125
Rg ()
RG ()
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
10000
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
16
14
12
10
8
6
4
2
0
V CES = 300V
V CES = 400V
Capacitance (pF)
1000
Cies
100
Coes
Cres
10
0
20
40
60
80
100
VCE (V)
VGE, Gate-to-Emitter Voltage (V)
0
5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
5
www.irf.com
© 2012 International Rectifier
Fig. 18
- Typical Gate Charge vs. V
GE
I
CE
= 24A; L = 600μH
October 10, 2012
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