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CY7C199D-25SXET

产品描述SRAM 256 KB, 5.50 V 25 ns Async Fast SRAMs
产品类别存储   
文件大小321KB,共16页
制造商Cypress(赛普拉斯)
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CY7C199D-25SXET概述

SRAM 256 KB, 5.50 V 25 ns Async Fast SRAMs

CY7C199D-25SXET规格参数

参数名称属性值
产品种类
Product Category
SRAM
制造商
Manufacturer
Cypress(赛普拉斯)
RoHSDetails
系列
Packaging
Reel
Moisture SensitiveYes
工厂包装数量
Factory Pack Quantity
1000

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CY7C199D
256-Kbit (32K × 8) Static RAM
256-Kbit (32K × 8) Static RAM
Features
Functional Description
The CY7C199D is a high performance CMOS static RAM
organized as 32,768 words by 8-bits. Easy memory expansion is
provided by an active LOW chip enable (CE), an active LOW
output enable (OE) and tri-state drivers. This device has an
automatic power-down feature, reducing the power consumption
when deselected. The input and output pins (I/O
0
through I/O
7
)
are placed in a high impedance state when the device is
deselected (CE HIGH), the outputs are disabled (OE HIGH), or
during a write operation (CE LOW and WE LOW).
Write to the device by taking chip enable (CE) and write enable
(WE) inputs LOW. Data on the eight I/O pins (I/O
0
through I/O
7
)
is then written into the location specified on the address pins (A
0
through A
14
).
Read from the device by taking chip enable (CE) and output
enable (OE) LOW while forcing write enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins appears on the I/O pins.
The CY7C199D device is suitable for interfacing with processors
that have TTL I/P levels. It is not suitable for processors that
require CMOS I/P levels. Please see
Electrical Characteristics
on page 4
for more details and suggested alternatives.
For a complete list of related documentation,
click here.
Temperature range
–40 °C to 85 °C
Pin and function compatible with CY7C199C
High speed
t
AA
= 10 ns
Low active power
I
CC
= 80 mA at 10 ns
Low CMOS standby power
I
SB2
= 3 mA
2.0 V data retention
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
Transistor-transistor logic (TTL) compatible inputs and outputs
Easy memory expansion with CE and OE features
Available in Pb-free 28-pin 300-Mil-wide molded small outline
J-lead package (SOJ) and 28-pin thin small outline package
(TSOP) I packages
Logic Block Diagram
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
Cypress Semiconductor Corporation
Document Number: 38-05471 Rev. *M
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 4, 2017

CY7C199D-25SXET相似产品对比

CY7C199D-25SXET CY7C199D-10VXI CY7C199D-10ZXI CY7C199D-10ZXIT
描述 SRAM 256 KB, 5.50 V 25 ns Async Fast SRAMs SRAM 256Kb 10ns 32K x 8 SRAM SRAM 256Kb 10ns 32K x 8 SRAM SRAM 256Kb 10ns 32K x 8 SRAM
产品种类
Product Category
SRAM - SRAM SRAM
制造商
Manufacturer
Cypress(赛普拉斯) - Cypress(赛普拉斯) Cypress(赛普拉斯)
RoHS Details - Details Details
系列
Packaging
Reel - Tray Reel
Moisture Sensitive Yes - Yes Yes
工厂包装数量
Factory Pack Quantity
1000 - 702 1500

 
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