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CY7C199D-10VXI

产品描述SRAM 256Kb 10ns 32K x 8 SRAM
产品类别存储    存储   
文件大小321KB,共16页
制造商Cypress(赛普拉斯)
标准
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CY7C199D-10VXI概述

SRAM 256Kb 10ns 32K x 8 SRAM

CY7C199D-10VXI规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Cypress(赛普拉斯)
零件包装代码SOJ
包装说明SOJ, SOJ28,.34
针数28
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID329634
Samacsys Pin Count28
Samacsys Part CategoryIntegrated Circuit
Samacsys Package CategoryOther
Samacsys Footprint Name28-pin SOJ (300 Mils) V28.3 (Molded SOJ V21) Package Outline, 51-85031
Samacsys Released Date2018-08-27 07:45:51
Is SamacsysN
最长访问时间10 ns
I/O 类型COMMON
JESD-30 代码R-PDSO-J28
JESD-609代码e4
长度17.907 mm
内存密度262144 bit
内存集成电路类型STANDARD SRAM
内存宽度8
湿度敏感等级3
功能数量1
端子数量28
字数32768 words
字数代码32000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32KX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码SOJ
封装等效代码SOJ28,.34
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源5 V
认证状态Not Qualified
座面最大高度3.556 mm
最大待机电流0.003 A
最小待机电流2 V
最大压摆率0.08 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式J BEND
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度7.5 mm
Base Number Matches1

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CY7C199D
256-Kbit (32K × 8) Static RAM
256-Kbit (32K × 8) Static RAM
Features
Functional Description
The CY7C199D is a high performance CMOS static RAM
organized as 32,768 words by 8-bits. Easy memory expansion is
provided by an active LOW chip enable (CE), an active LOW
output enable (OE) and tri-state drivers. This device has an
automatic power-down feature, reducing the power consumption
when deselected. The input and output pins (I/O
0
through I/O
7
)
are placed in a high impedance state when the device is
deselected (CE HIGH), the outputs are disabled (OE HIGH), or
during a write operation (CE LOW and WE LOW).
Write to the device by taking chip enable (CE) and write enable
(WE) inputs LOW. Data on the eight I/O pins (I/O
0
through I/O
7
)
is then written into the location specified on the address pins (A
0
through A
14
).
Read from the device by taking chip enable (CE) and output
enable (OE) LOW while forcing write enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins appears on the I/O pins.
The CY7C199D device is suitable for interfacing with processors
that have TTL I/P levels. It is not suitable for processors that
require CMOS I/P levels. Please see
Electrical Characteristics
on page 4
for more details and suggested alternatives.
For a complete list of related documentation,
click here.
Temperature range
–40 °C to 85 °C
Pin and function compatible with CY7C199C
High speed
t
AA
= 10 ns
Low active power
I
CC
= 80 mA at 10 ns
Low CMOS standby power
I
SB2
= 3 mA
2.0 V data retention
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
Transistor-transistor logic (TTL) compatible inputs and outputs
Easy memory expansion with CE and OE features
Available in Pb-free 28-pin 300-Mil-wide molded small outline
J-lead package (SOJ) and 28-pin thin small outline package
(TSOP) I packages
Logic Block Diagram
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
Cypress Semiconductor Corporation
Document Number: 38-05471 Rev. *M
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 4, 2017

CY7C199D-10VXI相似产品对比

CY7C199D-10VXI CY7C199D-10ZXI CY7C199D-10ZXIT CY7C199D-25SXET
描述 SRAM 256Kb 10ns 32K x 8 SRAM SRAM 256Kb 10ns 32K x 8 SRAM SRAM 256Kb 10ns 32K x 8 SRAM SRAM 256 KB, 5.50 V 25 ns Async Fast SRAMs
产品种类
Product Category
- SRAM SRAM SRAM
制造商
Manufacturer
- Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯)
RoHS - Details Details Details
系列
Packaging
- Tray Reel Reel
Moisture Sensitive - Yes Yes Yes
工厂包装数量
Factory Pack Quantity
- 702 1500 1000

 
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