RN1112MFV,RN1113MFV
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
(Bias Resistor built-in Transistor)
RN1112MFV, RN1113MFV
0.22 ± 0.05
Unit: mm
1.2 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2112MFV and RN2113MFV
0.8 ± 0.05
1
1.2 ± 0.05
0.4
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit
0.5 ± 0.05
1. BASE
VESM
2. EMITTER
3. COLLECTOR
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
5
100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Pad Dimension（Reference）
0.5
0.45
Unit：mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-02
1
2014-03-01
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