MIXA150Q1200VA
preliminary
XPT IGBT Module
V
CES
I
C25
=
=
1200 V
250 A
1.7 V
V
CE(sat)
=
Buck Chopper
Part number
MIXA150Q1200VA
Backside: isolated
1/2
9
10
6/7
4/5
Features / Advantages:
●
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
●
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
●
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
●
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
●
Switched-mode power supplies
●
Switched reluctance motor drive
Package:
V1-A-Pack
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Height: 17 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170522c
© 2017 IXYS all rights reserved
MIXA150Q1200VA
preliminary
IGBT
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
CM
SCSOA
t
SC
I
SC
R
thJC
R
thCH
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
collector emitter saturation voltage
Ratings
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
Conditions
T
VJ
=
25°C
min.
typ.
max. Unit
1200
V
±20
±30
V
V
A
A
W
V
V
7.5
0.1
V
mA
mA
500
nA
nC
ns
ns
ns
ns
mJ
mJ
450
A
µs
A
0.16 K/W
K/W
T
C
= 25°C
T
C
= 80 °C
T
C
= 25°C
I
C
= 150 A; V
GE
= 15 V
I
C
=
6 mA; V
GE
= V
CE
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125 °C
6
1.7
1.9
6.8
0.1
510
220
inductive load
V
CE
= 600 V; I
C
= 150 A
V
GE
= ±15 V; R
G
= 1.2
Ω
T
VJ
= 125 °C
100
400
220
21.5
17
V
GE
= ±15 V; R
G
= 1.2
Ω
V
CEmax
= 1200 V
V
CEmax
= 1200 V
V
CE
= 900 V; V
GE
= ±15 V
R
G
= 1.2
Ω;
non-repetitive
T
VJ
= 125 °C
650
0.10
T
VJ
= 125 °C
250
175
695
2.1
gate emitter threshold voltage
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
V
CE
= 600 V; V
GE
= 15 V; I
C
= 150 A
10
Diode
V
RRM
I
F25
I
F 80
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
forward voltage
max. repetitive reverse voltage
forward current
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80 °C
I
F
= 150 A
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C
1.95
T
VJ
= 25°C
T
VJ
= 125°C
0.8
20
T
VJ
= 125°C
175
350
10
0.20
1200
190
130
2.20
0.3
V
A
A
V
V
mA
mA
µC
A
ns
mJ
reverse current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
V
R
= 600 V
-di
F
/dt = 2500 A/µs
I
F
= 150 A; V
GE
= 0 V
0.28 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170522c
© 2017 IXYS all rights reserved
MIXA150Q1200VA
preliminary
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
V1-A-Pack
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
100
150
125
125
Unit
A
°C
°C
°C
g
Nm
mm
mm
V
V
37
2
6.0
12.0
3600
3000
2.5
Date Code
Prod. Index
Part description
M
I
X
A
150
Q
1200
VA
=
=
=
=
=
=
=
=
Module
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Buck Chopper
Reverse Voltage [V]
V1-A-Pack
yywwA
Part Number (Typ)
Lot No.:
Data Matrix:
Typ
(1-19), DC+Prod.Index (20-25),
FKT#
(26-31)
leer
(33),
lfd.#
(33-36)
Ordering
Standard
Ordering Number
MIXA150Q1200VA
Marking on Product
MIXA150Q1200VA
Delivery Mode
Blister
Quantity
24
Code No.
512328
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
* on die level
T
VJ
= 150 °C
IGBT
Diode
V
0 max
R
0 max
1.1
9.2
1.25
5.7
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170522c
© 2017 IXYS all rights reserved
MIXA150Q1200VA
preliminary
Outlines V1-A-Pack
0,5
+0,2
R2
17
±0,25
max. 0,25
35
63
13
26
31,6
52 (see 1)
=
1x45°
*14
*11
4
1
=
11,75
±0,3
12,2
5,5
11,75
±0,3
Ø 6,1
1,5
*7
*0
*7 *14
Ø 2,5
2
3
5
4
*0
6
7
8
15
5,5
Ø 2,1
9
*11
6
0,5
*14
25
25,75
±0,3
*7
*0
*7 *14
25
*
25,75
±0,3
Ø 0,8
1
±0,2
Marking on product
Aufdruck der Typenbezeichnung
Remarks /
Bemerkungen:
1. Nominal distance mounting screws on heat sink: 52 mm /
Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm
2. General tolerance /
Allgemeintoleranz
: DIN ISO 2768 -T1-c
3. Surface treatment of pins: tin plated (Sn) in hot dip /
Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad
4.
Detail X :
EJOT PT® self-tapping screws (dimension K25) to be recommended for mounting on PCB
selbstschneidende Schraube (Größe K25) empfohlen für die PCB-Montage
Take care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm
Bei der Wahl der Schraubenlänge die PCB-Dicke und die maximale Lochtiefe von 6mm beachten
Recommended mounting torque: 1.5 Nm
/ Empfohlenes Drehmoment: 1.5 Nm
10
2
+0,2
1/2
9
10
6/7
4/5
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
6
20170522c
© 2017 IXYS all rights reserved
2
3,6
±0,5
MIXA150Q1200VA
preliminary
IGBT
300
V
GE
= 15 V
300
V
GE
= 19 V
17 V
15 V
300
13 V
V
CE
= 20 V
200
25°C
200
125°C
11 V
T
VJ
= 125°C
200
I
C
[A]
100
I
C
[A]
100
I
C
[A]
100
125°C
25°C
9V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
0
6
7
8
9
10 11 12
13
V
CE
[V]
Fig.1 Output characteristics IGBT
V
CE
[V]
Fig.2 Typ. output characteristics
IGBT
40
400
30
300
t
d(on)
t
r
R
G
= 1.2
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
V
GE
[V]
Fig. 3 Typ. transfer charact.
IGBT
60
50
600
40
80
R
G
= 1.2
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
800
60
E
off
t
r
200
20
t
d(off)
t
400
E
on
40
I
F
30
20
125°C
[mJ]
20
[ns]
100
[mJ]
10
t
f
[ns]
200
[A]
10
25°C
0
E
on
0
100
200
300
E
off
0
0
0
100
200
300
0
0
0.0
0.5
1.0
1.5
2.0
2.5
I
C
[A]
Fig. 4 Typ. turn-on energy & switch.
times vs. collector current
8
80
I
rr
60
2.5
I
C
[A]
Fig. 5 Typ. turn-off energy & switch.
times vs. collector current
125
1
V
F
[V]
Fig. 6 Typ. forward characteristics
Diode
R
G
= 1.2
V
R
= 600 V
T
VJ
= 125°C
E
rec
2.0
T
VJ
= 125°C
V
R
= 600 V
I
F
= 30 A
100
6
Diode
E
rec
1.5
75
Z
thJC
IGBT
E
rec
4
I
rr
40
[mJ]
1.0
I
rr
50
[mJ]
2
[A]
20
I
rr
[A]
25
0.1
[K/W]
0.5
E
rec
0
10
20
30
40
50
0
0
60
0.0
0
4
8
12
16
20
0
24
0.01
0.001
R
i
0.020
0.003
0.040
0.097
IGBT
t
i
0.006
0.007
0.030
0.250
R
i
0.054
0.050
0.096
0.080
Diode
t
0.002
0.030
0.030
0.080
i
0.01
0.1
1
10
I
F
[A]
Fig. 7 Typ. reverse recovery
characteristics Diode
IXYS reserves the right to change limits, conditions and dimensions.
R
G
[ ]
Fig. 8 Typ. reverse recovery
characteristics Diode
t [s]
Fig. 9 Transient thermal
resistance junction to case
20170522c
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
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