Freescale Semiconductor
Technical Data
Document Number: MRF9002NR2
Rev. 8, 5/2006
RF Power Field Effect Transistor Array
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen‐
cies to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment. The device is in a PFP-16 Power Flat Pack package
which gives excellent thermal performances through a solderable backside
contact.
•
Typical Performance at 960 MHz, 26 Volts
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
Features
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MRF9002NR2
1000 MHz, 2 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
16
1
ARCHIVE INFORMATION
CASE 978-03
PLASTIC
PFP-16
N.C.
N.C.
GATE1
N.C.
GATE2
N.C.
GATE3
N.C.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
DRAIN 1-1
DRAIN 1-2
DRAIN 2-1
DRAIN 2-2
N.C.
DRAIN 3-1
DRAIN 3-2
N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Dissipation Per Transistor @ T
C
= 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
-0.5, +65
-0.5, +15
4
-65 to +150
150
Unit
Vdc
Vdc
W
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case, Single Transistor
Symbol
R
θJC
Value
(1)
12
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22-A113, IPC/JEDEC J-STD-020
Rating
3
Package Peak Temperature
260
Unit
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
MRF9002NR2
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 25 mAdc)
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 0.1 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
2.4
3
—
—
—
0.3
4
5
—
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(Per Transistor in Freescale Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ P1dB
(V
DD
= 26 Vdc, I
DQ
= 25 mA, f = 960.0 MHz)
G
ps
η
IRL
P
1dB
15
35
—
34
18
50
-15
37
—
—
-9
—
dB
%
dB
dBm
ARCHIVE INFORMATION
Input Return Loss @ P1dB
(V
DD
= 26 Vdc, I
DQ
= 25 mA, f = 960.0 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 25 mA, f = 960.0 MHz)
MRF9002NR2
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Drain Efficiency @ P1dB
(V
DD
= 26 Vdc, I
DQ
= 25 mA, f = 960.0 MHz)
V
GS1
+
C7
Z2
C14
R1
Z3
L1
L4
DUT
Z4
+
C8
Z5
C16
V
DS1
RF1
OUTPUT
RF1
INPUT
Z1
C1
V
GS2
Z6
C3
V
GS3
Z11
C5
C2
V
DS2
+
C9
Z7
C13
+
C11
Z12
C15
R3
Z13
R2
Z8
L2
L5
Z9
+
C10
Z10
C18
+
C12
Z14
Z15
C17
RF2
INPUT
C4
V
DS3
RF2
OUTPUT
L3
L6
RF3
INPUT
C6
RF3
OUTPUT
ARCHIVE INFORMATION
Figure 2. MRF9002NR2 Broadband Test Circuit Schematic
Table 5. MRF9002NR2 Broadband Test Circuit Component Designations and Values
Designators
C1-C6
C7-C12
C13
C14, C15
C16, C17
C18
L1-L6
R1-R3
Z1, Z11
Z2, Z7, Z12
Z3, Z8, Z13
Z4, Z14
Z5, Z15
Z6
Z9
Z10
PCB
Raw PCB Material
Bedstead
33 pF Chip Capacitors (0805)
1.0
μF,
35 V Tantalum Capacitors, B Case, Kemet
8.2 pF Chip Capacitor (0805)
10 pF Chip Capacitors (0805)
2.7 pF Chip Capacitors (0805)
3.3 pF Chip Capacitor (0805)
12 nH Chip Inductors (0805)
0
W
Chip Resistors (0805)
1.16 x 28.5 mm Microstrip
0.65 x 5.6 mm Microstrip
0.65 x 2.6 mm Microstrip
1.16 x 19.5 mm Microstrip
1.16 x 17.5 mm Microstrip
1.16 x 12.9 mm Microstrip
1.16 x 27.2 mm Microstrip
1.16 x 4.3 mm Microstrip
Etched Circuit Board
Rogers RO4350, 0.020″, 2.5″, x 2.5″,
e
r
= 3.5
Copper Heatsink
Description
MRF9002NR2
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
RF1 INPUT
C1
V
GS1
V
GS2
C7
C16
C8
RF1 OUTPUT
C2
V
DS1
V
DS2
C10
C9
L1
RF2 INPUT
L2
R2
C13
R3
L3
MRF9002
960 MHz
Rev. B
C11
C15
L6
R1
Pin 1
C14
L4
ARCHIVE INFORMATION
C18
C4
C12
C17
V
DS3
V
GS3
C5
RF3 INPUT
C6
RF3 OUTPUT
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/‐
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 3. MRF9002NR2 Broadband Test Circuit Component Layout
MRF9002NR2
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C3
L5
RF2 OUTPUT
TYPICAL CHARACTERISTICS
35
33
Pout , OUTPUT POWER (dBm)
31
29
27
25
23
21
19
17
15
0
2
4
6
8
10
V
DS
= 26 Vdc
I
DQ
= 25 mA
f = 960 MHz
Single-Tone
12
14
P
out
19.5
19.25
G
ps
19
G ps , POWER GAIN (dB)
18.75
18.5
18.25
18
17.75
17.5
17.25
17
16
16
15
10
15
20
25
30
P
out
, OUTPUT POWER (dBm)
G ps , POWER GAIN (dB)
21
20
19
18
17
V
DS
= 26 Vdc
f = 960 MHz
Single-Tone
25 mA
75 mA
50 mA
23
22
100 mA
ARCHIVE INFORMATION
P
in
, INPUT POWER (dBm)
Figure 4. Output Power and Power Gain
versus Input Power
Figure 5. Power Gain versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
20.3
G
ps
G ps , POWER GAIN (dB)
20.2
-28
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
5
10
15
20
25
30
35
40
P
out
, OUTPUT POWER (dBm) PEP
25 mA
50 mA
75 mA
100 mA
V
DS
= 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
-29
20.1
IMD
20
P
out
= 2 W (PEP)
I
DQ
= 25 mA
f1 = 960.0 MHz, f2 = 960.1 MHz
22
23
24
25
26
27
28
29
30
-30
-31
19.9
V
DS
, DRAIN SOURCE SUPPLY (VOLTS)
-32
Figure 6. Power Gain and Intermodulation Distortion
versus Supply Voltage
Figure 7. Intermodulation Distortion versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
0
-10
Pout , OUTPUT POWER (dBm)
-20
3rd Order
-30
-40
5th Order
-50
7th Order
-60
-70
10
15
20
25
30
35
40
P
out
, OUTPUT POWER (dBm)
V
DS
= 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
41
39
37
35
33
31
29
27
25
925
935
945
955
965
975
985
10 dBm
15 dBm
V
DS
= 26 Vdc
I
DQ
= 25 mA
Single-Tone
P
in
= 20 dBm
f, FREQUENCY (MHz)
Figure 8. Intermodulation Distortion Products
versus Output Power
Figure 9. Output Power versus Frequency
MRF9002NR2
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
35
40
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