X5R Dielectric
General Specifications
GENERAL DESCRIPTION
• General Purpose Dielectric for Ceramic Capacitors
• EIA Class IIDielectric
• Temperature variation of capacitance is within ±15%
from -55°C to +85°C
• Well suited for decoupling and filtering applications
• Available in High Capacitance values (up to 100µF)
PART NUMBER (see page 2 for complete part number explanation)
1210
Size
(L" xW")
0101**
0201
0402
0603
0805
1206
1210
1812
**EIA 01005
NOTE: Contact factory for availability of Tolerance Options for Specific PartNumbers.
Contact factory for non-specified capacitancevalues.
4
Voltage
4 =4V
6 =6.3V
Z =10V
Y= 16V
3 =25V
D =35V
5 =50V
1 =100V
D
Dielectric
D =X5R
107
Capacitance
Code (In pF)
2 Sig. Digits +
Number ofZeros
M
Capacitance
Tolerance
K =±10%
M =±20%
A
Failure
Rate
A = N/A
T
Terminations
T = PlatedNi
andSn
2
Packaging
2=7"Reel
4 = 13"Reel
U = 4mm TR
(01005)
A
Special
Code
A = Std.
TYPICAL ELECTRICAL CHARACTERISTICS
Temperature Coefficient
20
15
10
10,000
Insulation Resistance vs Temperature
%
½
Capacitance
5
0
-5
-10
-15
-20
-60
-40
-20
0
+20
+40
+60
+80
Insulation Resistance (Ohm-
Farads)
1,000
100
Temperature
°C
0
0
20
40
60
80
100
120
Temperature
°C
26
100917
X5R Dielectric
Specifications and Test Methods
Parameter/Test
Operating Temperature Range
Capacitance
Dissipation Factor
X5R Specification Limits
-55ºC to +85ºC
Within specified tolerance
≤ 2.5% for ≥ 50V DC rating
≤ 12.5% for 25V, 35V DC rating
≤ 12.5% Max. for 16V DC rating and lower
Contact Factory for DF by PN
10,000MΩ or 500MΩ - µF,
whichever is less
No breakdown or visual defects
No defects
≤ ±12%
Meets Initial Values (As Above)
≥ Initial Value x 0.3
≥ 95% of each terminal should be covered
with fresh solder
No defects, <25% leaching of either end terminal
≤ ±7.5%
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
No visual defects
≤ ±7.5%
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
No visualdefects
≤ ±12.5%
≤ Initial Value x 2.0 (SeeAbove)
≥ Initial Value x 0.3 (SeeAbove)
Meets Initial Values (As Above)
No visualdefects
≤ ±12.5%
≤ Initial Value x 2.0 (SeeAbove)
≥ Initial Value x 0.3 (SeeAbove)
Meets Initial Values (As Above)
Dip device in eutectic solder at 260ºC for 60
seconds. Store at room temperature for 24 ± 2
hours before measuring electrical properties.
Dip device in eutectic solder at 230 ± 5ºC
for 5.0 ± 0.5 seconds
Measuring Conditions
Temperature Cycle Chamber
Freq.: 1.0 kHz ± 10%
Voltage: 1.0Vrms ± .2V
For Cap > 10 µF, 0.5Vrms @ 120Hz
Charge device with rated voltage for
120 ± 5 secs @ room temp/humidity
Charge device with 250% of rated voltage for
1-5 seconds, w/charge and discharge current
limited to 50 mA(max)
Deflection: 2mm
Test Time: 30 seconds
Insulation Resistance
Dielectric Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Resistance to
Flexure
Stresses
Solderability
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Resistance to
Solder Heat
Step 1: -55ºC ± 2º
Step 2: RoomTemp
Step 3: +85ºC ± 2º
30 ± 3 minutes
≤ 3minutes
30 ± 3 minutes
Thermal
Shock
Step 4: Room Temp
≤ 3 minutes
Repeat for 5 cycles and measure after
24 ± 2 hours at room temperature
Charge device with 1.5X rated voltagein
test chamber set at 85ºC ± 2ºC for 1000 hours (+48,-0).
Note: Contact factory for *optional
specification part numbers that are testedat
< 1.5X ratedvoltage.
Remove from test chamber and stabilize
at room temperature for 24 ± 2hours
Store in a test chamber set at 85ºC ± 2ºC/
85% ± 5% relative humidity for 1000 hours
(+48, -0) with rated voltageapplied.
Remove from chamber and stabilizeat
room temperature and humidity for
24 ± 2 hours before measuring.
Load Life
Load
Humidity
100917
27
嵌入式系统
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