MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGP4N60ED/D
™
Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
Designer's
MGP4N60ED
IGBT & DIODE IN TO–220
4.0 A @ 90°C
6.0 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected and short circuit rugged device.
•
•
•
•
•
Industry Standard TO–220 Package
High Speed: Eoff = 60
m
J/A typical at 125°C
High Voltage Short Circuit Capability – 10
m
s minimum at 125°C, 400 V
Low On–Voltage 2.0 V typical at 3.0 A, 125°C
Soft Recovery Free Wheeling Diode
is Included in the Package
G
•
Robust High Voltage Termination
•
ESD Protection Gate–Emitter Zener Diodes
C
G
C
E
E
CASE 221A–09
STYLE 9
TO–220AB
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20
Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
VCES
VCGR
VGE
IC25
IC90
ICM
PD
TJ, Tstg
tsc
R
θJC
R
θJC
R
θJA
TL
Value
600
600
±
20
6.0
4.0
8.0
62.5
0.51
– 55 to 150
10
2.0
3.6
65
260
10 lbf
S
in (1.13 N
S
m)
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
m
s
°C/W
°C
Designer’s™ is a trademark of Motorola, Inc.
REV 1
©
Motorola IGBT Device
Motorola, Inc. 1998
Data
1
MGP4N60ED
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 1.5 Adc)
(VGE = 15 Vdc, IC = 1.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 3.0 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 3 0 Adc
Vdc
3.0 Adc,
VGE = 15 Vdc)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
(VCC = 360 Vdc, IC = 3 0 Ad
Vd
3.0 Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
H,
RG = 20
Ω,
TJ = 125°C)
125 C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 3 0 Ad
Vd
3.0 Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
H,
RG = 20
Ω)
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
QT
Q1
Q2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
34
30
36
216
100
25
125
33
32
56
340
170
50
220
18.1
3.8
7.8
—
—
—
—
150
—
—
—
—
—
—
—
—
—
—
—
—
nC
ns
ns
(VCE = 25 Vdc, VGE = 0 Vdc,
Vdc
Vdc
f = 1.0 MHz)
Cies
Coes
Cres
—
—
—
342
40
3.0
—
—
—
pF
VCE(on)
—
—
—
VGE(th)
4.0
—
gfe
—
6.0
10
1.8
8.0
—
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
mV/°C
Mhos
Vdc
V(BR)CES
600
—
ICES
—
—
IGES
—
—
—
—
10
200
50
—
870
—
—
Vdc
mV/°C
µAdc
Symbol
Min
Typ
Max
Unit
m
Adc
m
J
m
J
2
Motorola IGBT Device Data
MGP4N60ED
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 1.25 Adc)
(IEC = 1.25 Adc, TJ = 125°C)
(IEC = 2.5 Adc)
Reverse Recovery Time
(IF = 2.5 Adc,
2 5 Ad
VR = 360 Vdc
Vdc,
dIF/dt = 200 A/
m
s)
)
Reverse Recovery Stored Charge
Reverse Recovery Time
(IF = 2 5 Adc
2.5 Adc,
,
VR = 360 Vdc,
dIF/dt = 200 A/
m
s,
TJ = 125°C)
VFEC
—
—
—
trr
ta
tb
QRR
trr
ta
tb
QRR
—
—
—
—
—
—
—
—
1.7
1.3
2.0
39
15
24
51
68
21
47
115
—
—
2.3
—
—
—
—
—
—
—
—
nC
nC
ns
ns
Vdc
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
15
TJ = 25°C
IC , COLLECTOR CURRENT (AMPS)
12
20 V
17.5 V
IC , COLLECTOR CURRENT (AMPS)
15 V
12
15
LE
—
7.5
—
nH
TJ = 125°C
20 V
17.5 V
15 V
9
12.5 V
9
12.5 V
6
VGE = 10 V
3
0
6
VGE = 10 V
3
0
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
15
IC , COLLECTOR CURRENT (AMPS)
12.5
10
7.5
5.0
TJ = 125°C
2.5
25°C
0
5
7
9
11
13
15
17
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
VCE = 100 V
5
m
s PULSE WIDTH
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
IC = 3.0 A
2.0
VGE = 15 V
80
m
s PULSE WIDTH
1.8
2.0 A
1.6
1.5 A
1.4
–50
–25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Motorola IGBT Device Data
3
MGP4N60ED
TJ = 25°C
VGE = 0 V
Cies
400
Coes
200
Cres
0
0
5
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
800
20
16
QT
12
Q1
8
TJ = 25°C
VCC = 300 V
IC = 3.0 A
0
5
10
15
20
25
Q2
C, CAPACITANCE (pF)
600
4
0
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
0.25
ETS , TOTAL ENERGY LOSSES (mJ)
0.30
ETS , TOTAL ENERGY LOSSES (mJ)
0.25
0.20
0.15
0.10
0.05
0
5
15
25
35
45
50
RG, GATE RESISTANCE (OHMS)
1.0 A
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
0.20
VCC = 360 V
VGE = 15 V
RG = 20
W
IC = 3.0 A
2.0 A
2.0 A
0.15
1.0 A
0.10
0.05
0
–50
–25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
0.25
ETS , TOTAL ENERGY LOSSES (mJ)
0.20
Eoff , TURN–OFF ENERGY LOSSES (mJ)
TJ = 125°C
VDD = 360 V
VGE = 15 V
RG = 20
W
0.2
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
0.15
2.0 A
0.1
1.0 A
0.10
0.05
0
0
0.5
1
1.5
2
2.5
3
IC, COLLECTOR CURRENT (AMPS)
0
5
15
25
35
45
50
RG, GATE RESISTANCE (OHMS)
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Losses versus
Gate Resistance
4
Motorola IGBT Device Data
MGP4N60ED
0.20
Eoff , TURN–OFF ENERGY LOSSES (mJ)
IC = 3.0 A
Eoff , TURN–OFF ENERGY LOSSES (mJ)
VCC = 360 V
VGE = 15 V
RG = 20
W
0.20
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20
W
0.15
0.15
0.10
2.0 A
1.5 A
0.10
0.05
0.05
0
–50
–25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
0
0
1
2
3
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Turn–Off Losses versus
Junction Temperature
10
IC , COLLECTOR CURRENT (AMPS)
IF , INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
Figure 12. Turn–Off Losses versus
Collector Current
TJ = 125°C
25°C
TJ = 125°C
RGE = 20
W
VGE = 15 V
1
1
0.5
1
1.5
2
2.5
3
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 13. Forward Characteristics
versus Current
Figure 14. Reverse Biased Safe
Operating Area
Motorola IGBT Device Data
5
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