MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MHPM7A20E60DC3/D
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Hybrid Power Module
Integrated Power Stage
for 230 VAC Motor Drive
This module integrates a 3–phase inverter, 3–phase rectifier,
brake, and temperature sense in a single convenient package. It is
designed for 2.0 hp general purpose 3–phase induction motor drive
applications. The inverter incorporates advanced insulated gate
bipolar transistors (IGBT) with integrated ESD protection Gate–
Emitter zener diodes and ultrafast soft (UFS) free–wheeling diodes
to give optimum performance. The solderable top connector pins
are designed for easy interfacing to the user’s control board.
•
Short Circuit Rated 10
µs
@ 125°C, 400 V
•
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
•
Compact Package Outline
•
Access to Positive and Negative DC Bus
•
Independent Brake Circuit Connections
•
UL Recognition Pending
ORDERING INFORMATION
Device
PHPM7A20E60DC3
Voltage
Rating
600
Current
Rating
20
Equivalent
Horsepower
2.0
MHPM7A20E60DC3
Motorola Preferred Device
20 AMP, 600 VOLT
HYBRID POWER MODULE
CASE 464D–01
ISSUE O
MAXIMUM DEVICE RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C)
IGBT Reverse Voltage
Gate-Emitter Voltage
Continuous IGBT Collector Current (TC = 25°C)
Continuous IGBT Collector Current (TC = 80°C)
Repetitive Peak IGBT Collector Current (1)
Continuous Free–Wheeling Diode Current (TC = 25°C)
Continuous Free–Wheeling Diode Current (TC = 80°C)
Repetitive Peak Free–Wheeling Diode Current (1)
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C)
IGBT Power Dissipation per die (TC = 95°C)
Free–Wheeling Diode Power Dissipation per die (TC = 95°C)
Junction Temperature Range
Short Circuit Duration (VCE = 400 V, TJ = 125°C)
Isolation Voltage, pin to baseplate
Operating Case Temperature Range
Storage Temperature Range
Mounting Torque — Heat Sink Mounting Holes
(1) 1.0 ms = 1.0% duty cycle
Preferred
devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Symbol
VRRM
VCES
VGES
ICmax
ICmax
IC(pk)
IFmax
IF80
IF(pk)
IOmax
PD
PD
TJ
tsc
VISO
TC
Tstg
—
Value
900
600
±
20
20
15.8
40
20
14.1
40
20
25
17
– 40 to +150
10
2500
– 40 to +95
– 40 to +150
12
Unit
V
V
V
A
A
A
A
A
A
A
W
W
°C
m
s
Vac
°C
°C
lb–in
Motorola IGBT Device
©
Motorola, Inc. 1998
Data
1
MHPM7A20E60DC3
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (IF = 20 A)
Gate–Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)
THERMAL CHARACTERISTICS, EACH DIE
Thermal Resistance — IGBT
Thermal Resistance — Free–Wheeling (Fast Soft) Diode
Thermal Resistance — Input Rectifier
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA)
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA)
VF
TCVF
1.983
—
2.024
–8.64
2.066
—
V
mV/°C
R
q
JC
R
q
JC
R
q
JC
—
—
—
1.8
2.6
3.4
2.2
3.3
4.2
°C/W
°C/W
°C/W
VF
IGES
ICES
VGE(th)
V(BR)CES
VCE(sat)
VF
—
—
—
4.0
600
—
1.6
1.0
—
5.0
6.0
—
2.2
2.0
1.25
±20
100
8.0
—
2.6
2.3
V
Symbol
Min
Typ
Max
Unit
m
A
m
A
V
V
V
V
2
Motorola IGBT Device Data
MHPM7A20E60DC3
TYPICAL CHARACTERISTICS
40
35
IF, FORWARD CURRENT (AMPS)
30
25°C
25
20
15
10
5.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
IF, FORWARD CURRENT (AMPS)
TJ = 125°C
40
35
30
25°C
25
20
15
10
5.0
0
0
0.5
1.0
1.5
2.0
2.5
VF, FORWARD VOLTAGE (VOLTS)
TJ = 125°C
Figure 1. Forward Characteristics —
Input Rectifier
Figure 2. Forward Characteristics —
Free–Wheeling Diode
40
IC , COLLECTOR CURRENT (AMPS)
IC , COLLECTOR CURRENT (AMPS)
35
VGE = 18 V
30
25
20
15
10
5.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
TJ = 25°C
12 V
9.0 V
15 V
40
15 V
35
30
25
20
15
10
5.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
TJ = 125°C
9.0 V
VGE = 18 V
12 V
Figure 3. Forward Characteristics, TJ = 25°C
Figure 4. Forward Characteristics, TJ = 125°C
+15 V
5.0
IG , GATE CLAMP DIODE CURRENT (mA)
4.0
3.0
2.0
1.0
0
–1.0
–2.0
–3.0
–4.0
–5.0
–30
TJ = 25°C
MBRS1100T3
MC33153
MBRS1100T3
120
W
RG(on)
20
W
RG(off)
MBRS1100T3
–20
–10
0
10
20
30
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Gate–Emitter Zener Diode
Clamp Characteristic
Figure 6. Recommended Gate Drive Circuit
Motorola IGBT Device Data
3
MHPM7A20E60DC3
TYPICAL CHARACTERISTICS
2.5
V F, FORWARD VOLTAGE @ 1 mA (VOLTS)
+15 V
MAXIMUM
TYPICAL
MINIMUM
2.0
R1
12.4 k
W
14
A/D INPUT
1.5
1.0
TYPICAL
VF = 2.240 – 0.00864 T
MIN: 2.199 – 0.00864 T
MAX: 2.282 – 0.00864 T
0
20
40
60
80
100
120
140
160
0.5
0
15
T, TEMPERATURE (°C)
Figure 7. Recommended Temperature Sense
Bias Circuit
Figure 8. BAV99LT1 Temperature Sense Diode
Performance: VF = 2.59 – 7.31E–3 TC
MOTOR OUTPUT
U
V
W
BRAKE RESISTOR
R
S 3 PHASE INPUT
T
1
2
3
4
5
6
7
8
9
10
11
12
D7
D8
D1
Q1
D3
Q3
D5
Q5
D9
TEMP
SENSE
D14
Q2
D2
D4
Q4
D6
Q6
Q7
D11 D13
D10 D12
24
R1
SENSE
RESISTOR
23
22
21
20
19
18
17
16
15
14
13
R2
R3
+
C1
FILTER
R NTC
FILTER
Figure 9. Schematic of Module, Showing Pin–Out and
External Connections
4
Motorola IGBT Device Data
MHPM7A20E60DC3
KEEP–OUT ZONES (x4)
0.585
0.250
0.175
0.450
1.850
0.925
0.270
0.066
0.140
NON–PLATED
THRU–HOLE
PLATED THRU–HOLES (x24)
OPTIONAL NON–PLATED
THRU–HOLES FOR ACCESS
TO HEAT SINK MOUNTING
SCREWS (x2)
NOTES:
1. Package is symmetrical, except for a polarizing plastic post near pin 1,
indicated by a non–plated thru–hole in the footprint.
2. Dimension of plated thru–holes indicates finished hole size after plating.
3. Access holes for mounting screws may or may not be necessary depending on
assembly plan for finished product.
Figure 10. Package Footprint (Dimensions in Inches)
Motorola IGBT Device Data
5
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