HCTS190MS
September 1995
Radiation Hardened
Synchronous 4-Bit Up/Down Counter
Description
The Intersil HCTS190MS is an asynchronously presettable
BCD Decade synchronous counter. Presetting the counter to
the number on the preset data inputs (P0 - P3) is accom-
plished by a low on the parallel load input (PL). Counting
occurs when (PL) is high, Count Enable (CE) is low and the
Up/Down (U/D) input is either low for up-counting or high for
down-counting. The counter is incremented or decremented
synchronously with the low-to-high transition of the clock.
When an overflow or underflow of the counter occurs, the
Terminal Count output (TC), which is low during counting,
goes high and remains high for one clock cycle. This output
can be used for look-ahead carry in high speed cascading.
The TC output also initiates the Ripple Clock output (RC)
which, normally high, goes low and remains low for the low-
level portion of the clock pulse. These counter can be cas-
caded using the Ripple Carry output.
If the decade counter is preset to an illegal state or assumes
an illegal state when power is applied, it will return to the
normal sequence in one or two counts
The HCTS190MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS190MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii
≤
5µA @ VOL, VOH
Ordering Information
PART NUMBER
HCTS190DMSR
HCTS190KMSR
HCTS190D/Sample
HCTS190K/Sample
HCTS190HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
(SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
P1
Q1
Q0
CE
U/D
Q2
Q3
GND
1
2
3
4
5
6
7
8
16 VCC
15 P0
14 CP
13 RC
12 TC
11 PL
10 P2
9 P3
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
P1
Q1
Q0
CE
U/D
Q2
Q3
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
P0
CP
RC
TC
PL
P2
P3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
1
518614
2474.2
HCTS190MS
Functional Diagram
15
PL
11
U/D
5
P0
1
P1
10
P2
9
P3
PL
P
T
CP
Q
Q
PL
P
T
CP
FF1
Q
Q
PL
P
T
CP
Q
Q
PL
P
T
CP
Q
Q
Q3
7
FF0
FF2
FF3
TC
CE
4
CP
14
3
Q0
2
Q1
6
Q2
RC
12
13
TRUTH TABLE
FUNCTION
Count Up
Count Down
Asynchronous Preset
No Change
H = High Level
L = Low Level
X = Immaterial
= Transition from low to high
NOTE: U/D or CE should be changed only when clock is high.
P;
H
H
L
H
CE
L
L
X
H
U/D
L
H
X
X
X
X
CP
Spec Number
2
518614
Specifications HCTS190MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage(VCC) . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times @ 4.5 VCC (TR, TF) . . . . . . . .500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH =2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOL = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = -50µA, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
3
518614
Specifications HCTS190MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
Pn to Qn
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
CP to Qn
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
CP to RC
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
CP to TC
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
U/D to RC
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
U/D to TC
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
CE to RC
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
MAX
32
37
38
44
24
28
36
41
24
29
23
27
17
19
26
29
33
39
33
39
32
36
34
38
29
33
35
38
20
21
29
31
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
PL to Qn
SYMBOL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
Spec Number
4
518614
Specifications HCTS190MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
CONDITIONS
VCC = 5.0V, f = 1MHz
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
+25
o
C
+125
o
C, -55
o
C
Output Transition Time
TTHL
TTLH
FMAX
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
TSU
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
TSU
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
TSU
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
TH
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
TH
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
TH
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
TREC
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
CP Pulse Width
TW
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
PLN Pulse Width
TW
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
4.0
MAX
0.75
-
UNITS
mA
mA
12
18
12
18
18
27
2
2
2
2
0
0
12
18
16
24
20
30
MIN
-
-
-
-
-
-
MAX
60
128
10
10
15
22
30
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
pF
pF
pF
pF
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Capacitance Power Dissipation
SYMBOL
CPD
Maximum Operating Frequency
(CPU, CPD)
Setup Time
Pn to PL
Setup Time
CE to CP
Setup Time
U/D to CP
Hold Time
Pn to PL
Hold Time
CE to CP
Hold Time
U/D to CP
Recovery Time
Output Current
(Source)
IOH
+25
o
C
-4.0
-
mA
Spec Number
5
518614
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