Datasheet> 器件分类 > 分立半导体> 晶体管> RN1903

文档预览

RN1903: 产品描述TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process); 产品类别分立半导体晶体管; 文件大小260KB，共7页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

下载文档详细参数选型对比全文预览

RN1903概述

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1903规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	符合
包装说明	SMALL OUTLINE, R-PDSO-G6
针数	6
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT-IN RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	6 pF
集电极-发射极最大电压	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70
JESD-30 代码	R-PDSO-G6
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
最大功率耗散 (Abs)	0.2 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

RN1901~RN1906

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1901,RN1902,RN1903

RN1904,RN1905,RN1906

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2901~RN2906

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1901

RN1902

RN1903

RN1904

RN1905

RN1906

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

EIAJ

TOSHIBA

Weight: 6.8mg

―

2-2J1A

Equivalent Circuit

(Top View)

Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1901~1906

RN1901~1904

RN1905, 1906

Symbol

CBO

CEO

EBO

stg

Rating

100

200

150

−55~150

Unit

°C

Total rating

2001-06-07

RN1903相似产品对比

	RN1903	RN1902	RN1901	RN1904	RN1906	RN1905
描述	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合
包装说明	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	ULTRA SUPERMINI, 2-2J1A, US6, 6 PIN	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
针数	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 10	BUILT-IN RESISTOR RATIO IS 21.36
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
基于收集器的最大容量	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70	50	30	80	80	80
JESD-30 代码	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
元件数量	2	2	2	2	2	2
端子数量	6	6	6	6	6	6
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
Base Number Matches	1	1	-	-	1	1

RN1903

RN1903概述

RN1903规格参数

文档预览

RN1903相似产品对比

推荐资源